Hard mask-forming composition and method for manufacturing electronic component

Patent metadata

Field	Value
Publication number	US-11921425-B2
Application number	US-202318174944-A
Country	US
Kind code	B2
Filing date	Feb 27, 2023
Priority date	Aug 2, 2018
Publication date	Mar 5, 2024
Grant date	Mar 5, 2024

Abstract

A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.

First claim

What is claimed is:

1. A hard mask-forming composition, which forms a hard mask used in lithography, comprising:
a resin (P) containing an aromatic ring and a polar group; and
a compound (OF) containing an oxazine ring fused to an aromatic ring,
wherein the content of the compound (OF) is 10 to 100 parts by mass based on 100 parts by mass of the resin (P), and
the compound (OF) is a compound (01) having a structure represented by the following general formula (o1-1):

wherein R o1 is a hydrocarbon group having 1 to 20 carbon atoms which may have a substituent; Ar o1 represents a monocyclic or polycyclic aromatic hydrocarbon ring having 6 to 20 carbon atoms; R o2 is a hydroxy group, a halogen atom, a nitro group, or a hydrocarbon group having 1 to 20 carbon atoms which may have a substituent; n o1 is an integer of 0 to 4; in the case where n o1 is an integer of 2 or more, a plurality of R o1 s may be the same or different; n o2 is an integer of 0 to 3; in the case where n o2 is an integer of 2 or more, a plurality of R o2 s may be the same or different, and two or more of the plurality of R o2 s may be bonded to each other to form a 4- to 20-membered ring structure together with the carbon atom in Ar o1 to which they are bonded; and marks “*” and “**” each independently represents a hydrogen atom or a bond.

2. The hard mask-forming composition according to claim 1 , wherein the polar group is selected from the group consisting of a hydroxy group, a carboxy group, an amino group, a sulfo group, an alkoxy group, and an epoxy group.

3. The hard mask-forming composition according to claim 1 , wherein the resin (P) contains a resin (P-1) having a structural unit (u11) represented by the following general formula (u11-1) and a structural unit (u12) represented by the following general formula (u12-1):

wherein R11 is a polycyclic aromatic hydrocarbon group having 10 to 30 carbon atoms which may have a substituent; and R12 is an aromatic hydrocarbon group having 6 to 30 carbon atoms which may have a substituent, or a hydrogen atom.

4. The hard mask-forming composition according to claim 1 , wherein the resin (P) contains a phenol resin (P-2) having a structural unit (u21) represented by the following general formula (u21-1) and a structural unit (u22) represented by the following general formula (u22-1):

wherein R21 is an organic group derived from a phenol compound having at least one hydroxy group; and R22 is an aromatic hydrocarbon group having 6 to 30 carbon atoms which may have a substituent, or a hydrogen atom.

5. The hard mask-forming composition according to claim 1 , wherein the resin (P) contains a resin (P-3) having a structural unit (u31) represented by the following general formula (u31-1):

wherein R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya x1 a single bond or a divalent linking group; Wa x1 a (n ax1 +1)-valent aromatic hydrocarbon group; and n ax1 is an integer of 1 to 3.

6. The hard mask-forming composition according to claim 5 , wherein the resin (P-3) further has a structural unit (u32) represented by the following general formula (u32-1):

wherein R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya x3 is a single bond or a divalent linking group; La x3 is —O—, —COO—, —CON(R′)—, —OCO—, —CONHCO— or —CONHCS— and R′ represents a hydrogen atom or a methyl group, provided that Ya x3 is not —CO— in the case where La x3 is —O—; and Ra x3 is a hydrogen atom, or a hydrocarbon group which may have a substituent.

7. A method for manufacturing an electronic component, comprising:
forming a hard mask layer (m 1 ) on a support using the hard mask-forming composition according to claim 1 ;
forming a hard mask layer (m 2 ) made of an inorganic material on the hard mask layer (m 1 );
forming a resist film on the hard mask layer (m 2 );
forming a resist pattern on the hard mask layer (m 2 ) by exposing and developing the resist film;
etching the hard mask layer (m 2 ) using the resist pattern as a mask to form an inorganic pattern;
etching the hard mask layer (m 1 ) using the inorganic pattern as a mask to form a resin pattern; and
processing the support with the resin pattern as a mask.

8. A method for manufacturing an electronic component, comprising:
forming a hard mask layer (m 1 ) on a support using the hard mask-forming composition according to claim 1 ;
forming an inorganic pattern made of an inorganic material on the hard mask layer (m 1 );
etching the hard mask layer (m 1 ) using the inorganic pattern as a mask to form a resin pattern; and
processing the support with the resin pattern as a mask.

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Tsuchiya Junichi
• Ibata Keiichi

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• G03F7/094 Primary

  Multilayer resist systems, e.g. planarising layers · CPC title

• C08F12/24

  Phenols or alcohols · CPC title