Gas-sensitive device

Patent metadata

Field	Value
Publication number	US-11921074-B2
Application number	US-202117453410-A
Country	US
Kind code	B2
Filing date	Nov 3, 2021
Priority date	Nov 20, 2020
Publication date	Mar 5, 2024
Grant date	Mar 5, 2024

Abstract

In accordance with an embodiment, a gas-sensitive device includes a substrate structure, and a gas sensitive capacitor. The gas sensitive capacitor a first capacitor electrode in form of a gas-sensitive layer on a first main surface region of an insulation layer, and a second capacitor electrode in form of a buried conductive region below the insulation layer, so that the insulation layer is arranged between the first and second capacitor electrode. The gas-sensitive layer comprises a sheet impedance which changes in response to the adsorption or desorption of gas molecules.

First claim

What is claimed is:

1. A gas sensitive device, comprising:
a substrate structure; and
a gas sensitive capacitor, the gas sensitive capacitor comprising:
a first capacitor electrode in form of a gas sensitive layer on a first main surface region of an insulation layer,
a second capacitor electrode in form of a buried conductive region below the insulation layer, wherein:
the insulation layer is arranged between the first and second capacitor electrode, and
the gas sensitive layer comprises a sheet impedance that changes in response to adsorption or desorption of gas molecules, and

a cover layer disposed on top of the insulation layer, wherein the cover layer has at least one common plane with the first capacitor electrode, the cover layer surrounds the first capacitor electrode in the at least one common plane leaving the entire first capacitor electrode uncovered by the cover layer.

2. The gas sensitive device according to claim 1 , wherein a projection of the first capacitor electrode vertically with respect to the first main surface region at least partially or completely overlaps with the second capacitor electrode.

3. The gas sensitive device according to claim 1 , wherein the gas sensitive device comprises:
a first contact region electrically contacting the first capacitor electrode; and
a second contact region electrically contacting the second capacitor electrode.

4. The gas sensitive device according to claim 3 , wherein the first contact region at least partially or completely surrounds and electrically contacts the first capacitor electrode.

5. The gas sensitive device according to claim 3 , wherein the first contact region forms an area contact region or a point contact region with the first capacitor electrode or the second contact region forms an area contact region or a point contact region with the second capacitor electrode.

6. The gas sensitive device according to claim 3 , wherein:
the cover layer further has at least one common plane with the first contact region; and
the cover layer surrounds the first contact region and the first capacitor electrode in the at least one common plane.

7. The gas sensitive device according to claim 6 , wherein the first contact region extends from the first capacitor electrode in the at least one common plane to a position above the cover layer being in at least a plane parallel to the at least one common plane.

8. The gas sensitive device according to claim 3 , wherein the second contact region is coupled to the second capacitor electrode, wherein
the second contact region and the second capacitor electrode are arranged in the same plane of the gas sensitive device; or
the second contact region and the second capacitor electrode are arranged in different planes of the gas sensitive device.

9. The gas sensitive device according to claim 8 , wherein
the first contact region contacts a first border region of the first capacitor electrode; or
the first contact region contacts a center region of the first capacitor electrode.

10. The gas sensitive device according to claim 8 , wherein the second capacitor electrode capacitively contacts a second border region of the first capacitor electrode.

11. The gas sensitive device according to claim 3 , wherein at least a portion of the first contact region is disposed over the cover layer.

12. The gas sensitive device according to claim 1 , wherein the first main surface region of the insulation layer having the gas sensitive layer is topology-free.

13. The gas sensitive device according to claim 1 , wherein the first capacitor electrode and the second capacitor electrode are arranged parallel to each other and vertical with respect to the first main surface region of the insulation layer.

14. The gas sensitive device according to claim 1 , wherein the first capacitor electrode being the gas sensitive layer is thin and/or is a two-dimensional layer, and comprises an electrical conductivity influenceable by an interaction with gas molecules.

15. The gas sensitive device according to claim 1 , wherein:
a third capacitor electrode is disposed apart from the second capacitor electrode; and
the third capacitor electrode and the second capacitor electrode are positioned so that both the third capacitor electrode and the second capacitor electrode extend along in at least one common plane.

16. The gas sensitive device according to claim 15 , wherein the third capacitor electrode and the second capacitor electrode are spaced apart from each other in the least one common plane by a second insulation layer extending between the third capacitor electrode and the second capacitor electrode.

17. The gas sensitive device according to claim 16 , wherein:
the gas sensitive device comprises a heater positioned in the gas sensitive device;
the heater is configured to bring the gas sensitive layer to a desired temperature or temperature profile for sensing or for resetting the gas sensitive layer; and
the heater and the second capacitor electrode are separated from each other by the second insulation layer.

18. The gas sensitive device according to claim 17 , wherein the gas sensitive device comprises a third contact region for electrically contacting the heater.

19. The gas sensitive device according to claim 17 , wherein the heater comprises at least one side that at least partially forms a cavity with at least a side of the substrate structure.

20. The gas sensitive device according to claim 1 , wherein:
a surrounding shape of the first capacitor electrode is different from a surrounding shape of the insulation layer; or
a surrounding shape of the first capacitor electrode is equal to the surrounding of the insulation layer; or
the first capacitor electrode completely or only partially overlaps the surface of the insulation layer.

21. The gas sensitive device according to claim 1 , wherein
a plurality of first electrodes is provided on top of the insulator layer; or
a plurality of second electrodes is provided below the insulator layer, or
a plurality of first and second contact regions is provided.

22. A method of operating a gas sensitive device comprising: a substrate structure; and a gas sensitive capacitor comprising a first capacitor electrode in form of a gas sensitive layer on a first main surface region of an insulation layer, a second capacitor electrode in form of a buried conductive region below the insulation layer, and a cover layer disposed on top of the insulation layer, wherein: the insulation layer is arranged between the first and second capacitor electrode, the gas sensitive layer comprises a sheet resistance that changes in response to adsorption or desorption of gas molecules, and the cover layer has at least one common plane with the first capacitor electrode, the cover layer surrounds the first capacitor electrode in the at least one common plane leaving the entire first capacitor electrode uncovered by the cover layer, the method comprising:
applying an AC signal to the first capacitor electrode; and
reading out a signal between the first capacitor electrode and the second capacitor electrode, wherein the signal read out comprises information on the sheet resistance of the gas sensitive layer of the first capacitor electrode due to the adsorbed or desorbed gas molecules.

Assignees

• Infineon Technologies Ag

Inventors

• Meyer Markus
• Breuer Werner

Classifications

• G01N27/221 Primary

  by investigating the dielectric properties (using microwaves G01N22/00; measuring loss factors or dielectric constants per se G01R27/26) · CPC title

• G01N33/0009

  General constructional details of gas analysers, e.g. portable test equipment (devices for withdrawing samples in the gaseous state G01N1/22) · CPC title

• G01N2027/222

  for analysing gases · CPC title

• G01N27/12 Primary

  of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid {, for detecting components in the fluid} · CPC title

• G01N27/125 Primary

  Composition of the body, e.g. the composition of its sensitive layer · CPC title