Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-11915920-B2
Application number	US-202017768017-A
Country	US
Kind code	B2
Filing date	Oct 20, 2020
Priority date	Oct 21, 2019
Publication date	Feb 27, 2024
Grant date	Feb 27, 2024

Abstract

The present invention provides a simpler method for sharpening a tip of an emitter. In addition, the present invention provides an emitter including a nanoneedle made of a single crystal material, an emitter including a nanowire made of a single crystal material such as hafnium carbide (HfC), both of which stably emit electrons with high efficiency, and an electron gun and an electronic device using any one of these emitters. A method for manufacturing the emitter according to an embodiment of the present invention comprises processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, wherein the processing is performed in an environment in which a periphery of the single crystal material fixed to a support is opened.

First claim

The invention claimed is:

1. A method for manufacturing an emitter, the method comprising:
processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, the processing being performed in an environment in which a periphery of the single crystal material fixed to a support is opened,
wherein the processing the single crystal material comprises setting a radius of curvature r N of a tip of the end to a value of 80% or less of a length d N of the single crystal material in a lateral direction.

2. The method according to claim 1 , wherein the single crystal material is chemically untreated.

3. The method according to claim 1 , wherein an end face opposite to the end of the single crystal material is fixed to a support face of the support.

4. The method according to claim 1 , wherein in the processing the single crystal material, the single crystal material is thinned toward the end by setting irradiation conditions of the focused ion beam such that a current is 200 to 800 pA, a voltage is 20 to 40 kV, a position to be irradiated is moved scanning in a direction from an outer side to an inner side of the single crystal material, and irradiation time is 0.5 to 30 minutes, and thereafter the radius of curvature r N of the tip of the end is set to a value of 20% or less of the length d N of the single crystal material in the lateral direction by setting the irradiation conditions of the focused ion beam such that a current is 10 to 100 pA, a voltage is 2 to 10 kV, a position to be irradiated is moved scanning in a direction from an outer side to an inner side of the single crystal material, and irradiation time is 0.5 to 10 minutes.

5. An emitter comprising a nanoneedle made of a single crystal material,
wherein the nanoneedle has an inevitable oxide layer at a surface layer portion,
wherein a portion of the nanoneedle underlying the inevitable oxide layer at the surface layer portion has no change in a stoichiometric composition from the single crystal material, and
a field electron emission pattern, obtained by a field emission microscope (FEM), at an end of the nanoneedle, through which electrons are to be emitted, is a single spot.

6. The emitter according to claim 5 , wherein the nanoneedle is manufactured by a method comprising:
processing the single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, the processing being performed in an environment in which a periphery of the single crystal material fixed to a support is opened.

7. The emitter according to claim 5 further comprising:
a support needle,
wherein an end face opposite to the end of the nanoneedle is fixed to a support face of the support needle made of an element selected from the group consisting of tungsten (W), tantalum (Ta), platinum (Pt), rhenium (Re), and carbon (C).

8. The emitter according to claim 5 , wherein the single crystal material is a rare-earth hexaboride.

9. An electron gun comprising at least the emitter according to claim 5 .

10. The electron gun according to claim 9 ,
wherein the emitter further comprises a support needle and a filament, and
the nanoneedle is attached to the filament via the support needle made of an element selected from the group consisting of tungsten (W), tantalum (Ta), platinum (Pt), rhenium (Re), and carbon (C).

11. The electron gun according to claim 9 , wherein the electron gun is a cold cathode field emission electron gun or a Schottky electron gun.

12. An electronic device comprising an electron gun,
wherein the electron gun is the electron gun according to claim 9 , and
the electronic device is selected from the group consisting of a scanning electron microscope, a transmission electron microscope, a scanning transmission electron microscope, an electron diffractometer, an Auger electron spectrometer, an electron energy loss spectrometer, and an energy dispersive electron spectrometer.

13. A method for manufacturing an emitter, the method comprising:
processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, the processing being performed in an environment in which a periphery of the single crystal material fixed to a support is opened,
wherein the single crystal material is a single crystal nanowire, and
wherein the processing the single crystal material comprises setting a radius of curvature r w of a tip of the end to a value of 50% or less of a length d w of the single crystal nanowire in a lateral direction.

14. The method according to claim 13 , wherein in the processing the single crystal material, the single crystal nanowire is thinned toward the end, and the radius of curvature r w of the tip of the end is set to a value of 50% or less of the length d w of the single crystal nanowire in the lateral direction, by setting irradiation conditions of the focused ion beam such that a current is 20 to 100 pA, a voltage is 2 to 10 kV, a position to be irradiated is moved scanning in a direction from an outer side to an inner side of the single crystal nanowire, and irradiation time is 0.5 to 5 minutes.

15. An emitter comprising a single crystal nanowire manufactured by the method according to claim 10 ,
wherein a field electron emission pattern, obtained by a field emission microscope (FEM), at an end of the single crystal nanowire, through which electrons are to be emitted, is a single spot.

16. The emitter according to claim 15 , wherein the single crystal nanowire is made of a metal carbide, a rare-earth boride, or a metal oxide.

17. The emitter according to claim 16 , wherein the single crystal nanowire is made of hafnium carbide (HfC).

18. An electron gun comprising at least the emitter according to claim 15 .

19. The electron gun according to claim 18 ,
wherein the emitter further comprises a support needle and a filament, and
the single crystal nanowire is attached to the filament via the support needle made of an element selected from the group consisting of tungsten (W), tantalum (Ta), platinum (Pt), rhenium (Re), and carbon (C).

20. The electron gun according to claim 18 , wherein the electron gun is a cold cathode field emission electron gun or a Schottky electron gun.

21. An electronic device comprising an electron gun,
wherein the electron gun is the electron gun according to claim 18 , and
the electronic device is selected from the group consisting of a scanning electron microscope, a transmission electron microscope, a scanning transmission electron microscope, an electron diffractometer, an Auger electron spectrometer, an electron energy loss spectrometer, and an energy dispersive electron spectrometer.

Assignees

• Nat Inst Materials Science

Inventors

• Tang Jie
• Tang Shuai
• Chiu Ta-Wei
• Ohkubo Tadakatsu
• UZUHASHI Jun
• Hono Kazuhiro
• Qin Luchang

Classifications

• H01J9/02 Primary

  Manufacture of electrodes or electrode systems · CPC title

• H01J1/02

  Main electrodes · CPC title

• H01J37/30

  Electron-beam or ion-beam tubes for localised treatment of objects · CPC title

• H01J9/025 Primary

  of field emission cathodes · CPC title

• H01J2201/30415

  needle shaped · CPC title