Multilayer electronic component including side margin portion having composition gradient across thickness thereof

Patent metadata

Field	Value
Publication number	US-11915880-B2
Application number	US-202117499103-A
Country	US
Kind code	B2
Filing date	Oct 12, 2021
Priority date	Jan 18, 2021
Publication date	Feb 27, 2024
Grant date	Feb 27, 2024

Abstract

A multilayer electronic component includes a body including a plurality of dielectric layers, side margin portions disposed on the body, and external electrodes disposed on the body. The reliability of the multilayer electronic component is improved by controlling the contents of Si for each position of the dielectric layer and the side margin portion.

First claim

What is claimed is:

1. A multilayer electronic component comprising:
a body including dielectric layers and having first and second surfaces opposing each other in a first direction, third and fourth surfaces connected to the first and second surfaces and opposing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other in a third direction;
side margin portions disposed on the fifth and sixth surfaces, respectively; and
external electrodes disposed on the third and fourth surfaces, respectively,
wherein the body includes an active portion including internal electrodes disposed alternately with the dielectric layers in the first direction and cover portions disposed on opposite end surfaces of the active portion in the first direction, respectively,
the dielectric layers and the side margin portions include Si, and an average content of Si in ‘m’ is higher than an average content of Si in ‘a’ and an average content of Si in ‘m2,’ in which ‘a’ is a region from a boundary between the active portion and the side margin portions to a region spaced apart from the boundary toward the active portion by 3μm, ‘m’ is a region from the boundary between the active portion and the side margin portions to a region spaced apart from the boundary outwardly of the side margin portions by 3μm, and ‘m2’ is a region from ‘m’ to a region spaced apart from ‘m’ outwardly of the side margin portions by 3μm,
Dm/Da is greater than 0.5 and less than 1.5 in which Da is an average size of dielectric grains in ‘a’ and Dm is an average size of dielectric grains in ‘m,’ and
the average size of dielectric grains in ‘m’ is different than an average size of dielectric grains in ‘m2’.

2. The multilayer electronic component of claim 1 , wherein the dielectric layers and the side margin portions further include Al, and
an average content of Al in ‘m’ is higher than an average content of Al in ‘a’ and an average content of Al in ‘m2’.

3. The multilayer electronic component of claim 2 , wherein peak values of a content of Si and a content of Al in ‘m’ are higher than those of a content of Si and a content of Al in ‘m2’.

4. The multilayer electronic component of claim 3 , wherein a distance difference between a point at which the content of Si has peak value in ‘m’ and a point at which the content of Al has peak value in ‘m’ is 0.3 μm or less.

5. The multilayer electronic component of claim 3 , wherein the average content of Si in ‘m’ is 2 mol or more and 7 mol or less based on 100 mol of BaTiO 3 .

6. The multilayer electronic component of claim 5 , wherein the average content of Al in ‘m’ is 1.5 mol or more and 3 mol or less based on 100 mol of BaTiO 3 .

7. The multilayer electronic component of claim 6 , wherein the dielectric layers and the side margin portions further include one or more of Mg and Dy.

8. The multilayer electronic component of claim 1 , wherein the dielectric layers include a first material comprising sintered first ceramic green sheets stacked in the first direction, and
the side margin portions include a second material comprising sintered second ceramic green sheets stacked in the third direction.

9. The multilayer electronic component of claim 8 , wherein 0.4<C1a/C2a<1 and 0.5<C1b/C2b<2 in which C1a and C1b are contents of Si and Al based on 100 mol of BaTiO 3 of the first ceramic green sheets, respectively, and C2a and C2b are contents of Si and Al based on 100 mol of BaTiO 3 of the second ceramic green sheets, respectively.

10. The multilayer electronic component of claim 1 , wherein the external electrodes include a first external electrode disposed on the third surface and a second external electrode disposed on the fourth surface and the internal electrodes include first internal electrodes in contact with the first external electrode and second internal electrodes in contact with the second external electrode, and
both end portions of the first and second internal electrodes in the third direction are in contact with the side margin portions.

11. A multilayer electronic component comprising:
a body including dielectric layers and having first and second surfaces opposing each other in a first direction, third and fourth surfaces connected to the first and second surfaces and opposing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other in a third direction;
side margin portions disposed on the fifth and sixth surfaces, respectively; and
external electrodes disposed on the third and fourth surfaces, respectively,
wherein the body includes an active portion including internal electrodes disposed alternately with the dielectric layers in the first direction and cover portions disposed on opposite end surfaces of the active portion in the first direction, respectively,
Dm/Da is greater than 0.5 and less than 1.5 in which ‘a’ is a region from a boundary between the active portion and the side margin portion to a region spaced apart from the boundary toward the active portion by 3 μm, Da is an average size of dielectric grains in ‘a’, ‘m’ is a region from the boundary between the active portion and the side margin portions to a region spaced apart from the boundary outwardly of the side margin portions by 3 μm, and Dm is an average size of dielectric grains in ‘m’, and
an average content of aluminum in ‘m’ is greater than an average content of aluminum in a region ‘m2’ which is a region continuous from ‘m’ to a region spaced apart from ‘m’ outwardly of the side margin portions by 3 μm.

12. The multilayer electronic component of claim 11 , wherein Dm/Da is in a range from 0.88 to 1.38.

13. The multilayer electronic component of claim 11 , wherein the dielectric layers and the side margin portions include Si, and an average content of Si in ‘m’ is higher than an average content of Si in ‘a’ and an average content of Si in ‘m2’.

14. A multilayer electronic component, comprising:
an active portion having internal electrodes disposed alternately with dielectric layers interposed there between, the internal electrodes and the dielectric layers being stacked in a thickness direction, the dielectric layers comprising aluminum;
side margin portions disposed on width-wise opposing surfaces of the active portion, the side margin portions comprising aluminum; and
external electrodes disposed on length-wise opposing surfaces of the active portion,
wherein an average content of aluminum in a region ‘m’ in the side margin portions spaced apart from a boundary between the active portion and the side margin portions by a distance of 3 μm is greater than an average content of aluminum in a region ‘m2’ in the side margin portions spaced further apart from the region ‘m’ a distance of 3 μm, and
wherein the dielectric layers and the side margin portions further include Si, and wherein peak values of a content of Si and a content of Al in ‘m’ are higher than those of a content of Si and a content of Al in ‘m2’.

15. The multilayer electronic component of claim 14 , wherein Dm/Da is between 0.5 and 1.5, wherein Da is an average size of dielectric grains in a region ‘a’ in the active portion spaced apart from a boundary between the active portion and the side margin portions by a distance of 3 μm, and Dm is an average size of dielectric grains in the region ‘m’.

16. The multilayer electronic component of claim 14 , wherein an average content of Si in the region ‘m’ is higher than an average content of Si in the region ‘m2’ and an average content of Si in a region ‘a’ in the

Assignees

• Samsung Electro Mech

Inventors

• Chun Hee Sun
• Kim Hyoung Uk
• Park Jae Sung
• An Hyeg Soon
• Lee Ku Tak
• Jang Eun Ha

Classifications

• H01G4/30 Primary

  Stacked capacitors (H01G4/33 takes precedence) · CPC title

• C04B35/4682 Primary

  based on BaTiO3 perovskite phase · CPC title

• H01G4/012

  Form of non-self-supporting electrodes · CPC title

• H01G4/1227

  based on alkaline earth titanates · CPC title

• H01G4/224

  Housing; Encapsulation · CPC title