Electron diffraction intensity from single crystal silicon in a photoinjector

Patent metadata

Field	Value
Publication number	US-11915837-B2
Application number	US-202117378094-A
Country	US
Kind code	B2
Filing date	Jul 16, 2021
Priority date	Jan 18, 2019
Publication date	Feb 27, 2024
Grant date	Feb 27, 2024

Abstract

A method includes simulating diffraction in a transmission geometry of relativistic electron bunches from a crystallographic structure of a crystal thereby simulating diffraction of the relativistic electron bunches into a plurality of Bragg peaks. The method includes selecting a range of angles between a direction of propagation of the relativistic electron bunches and a normal direction of crystal including an angle at which a diffraction portion is maximized. The method includes sequentially accelerating a plurality of physical electron bunches to relativistic energies toward a physical crystal having the crystallographic structure and diffracting the plurality of physical electron bunches off the physical crystal at different angles and measuring the diffraction portion into the respective Bragg peak at the different angles. The method includes selecting a final angle based on the measured diffraction portion into the respective Bragg peak at the different angles and generating a pulse of light.

First claim

What is claimed is:

1. A method, comprising:
simulating diffraction in a transmission geometry of relativistic electron bunches from a crystallographic structure of a crystal, thereby simulating diffraction of the relativistic electron bunches into a plurality of Bragg peaks;
selecting, based on the simulated diffraction of the relativistic electron bunches from the crystallographic structure, a range of angles between a direction of propagation of the relativistic electron bunches and a normal direction of crystal, wherein the range of angles is selected to include an angle at which a diffraction portion into a respective Bragg peak of the plurality of Bragg peaks is maximized;
sequentially accelerating a plurality of physical electron bunches to relativistic energies, wherein the plurality of physical electron bunches are accelerated toward a physical crystal having the crystallographic structure;
diffracting the plurality of physical electron bunches off the physical crystal at different angles within the range of angles;
measuring the diffraction portion into the respective Bragg peak at the different angles within the range of angles;
selecting a final angle based on the measured diffraction portion into the respective Bragg peak at the different angles within the range of angles;
generating a pulse of light, including:
accelerating a subsequent physical electron bunch to a relativistic energy;
diffracting the subsequent physical electron bunch off the physical crystal at final angle; and
generating the pulse of light using the diffracted subsequent physical electron bunch.

2. The method of claim 1 , wherein:
diffracting the subsequent physical electron bunch off the physical crystal at the final angle partitions the subsequent physical electron bunch in a direction substantially transverse to the direction of propagation of the subsequent physical electron bunch;
the pulse of light is generated with the subsequent physical electron bunch partitioned in a direction substantially parallel to the direction of propagation of the subsequent physical electron bunch; and
the method further includes:
prior to generating the pulse of light using the partitioned subsequent physical electron bunch, performing an emittance exchange on the partitioned subsequent physical electron bunch.

3. The method of claim 2 , wherein generating the pulse of light using the partitioned electron bunch comprises scattering the partitioned electron bunch off of light from a laser.

4. The method of claim 2 , wherein generating the pulse of light using the partitioned electron bunch comprises subjecting the partitioned electron bunch to an undulator.

5. The method of claim 1 , wherein the simulation of the diffraction in the transmission geometry is performed using a multi-slice method.

6. The method of claim 1 , wherein the crystal is a silicon crystal.

7. The method of claim 6 , wherein the crystallographic structure is a Si(100) crystallographic structure.

8. The method of claim 1 , wherein the pulse of light comprises x-rays.

Assignees

• Univ Arizona State

Inventors

• Graves William
• Malin Lucas

Classifications

• G21K1/062 Primary

  Devices having a multilayer structure · CPC title

• G01N23/20008

  Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor (monochromators for X- rays using crystals G21K1/06) · CPC title

• H01S4/00

  Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups H01S1/00, H01S3/00 or H01S5/00, e.g. phonon masers, X-ray lasers or gamma-ray lasers · CPC title

• H05G2/008

  involving an energy-carrying beam in the process of plasma generation · CPC title

• G01N2223/0565

  diffraction of electrons, e.g. LEED · CPC title