Raw material for chemical deposition containing organoruthenium compound, and chemical deposition method using the raw material for chemical deposition

Patent metadata

Field	Value
Publication number	US-11913110-B2
Application number	US-202117796215-A
Country	US
Kind code	B2
Filing date	Jan 28, 2021
Priority date	Jan 31, 2020
Publication date	Feb 27, 2024
Grant date	Feb 27, 2024

Abstract

The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L 1 ) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand L 1 is represented by the following Formula 2:

wherein a substituent R of the ligand L 1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.

First claim

What is claimed is:

1. A raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the raw material comprising:
an organoruthenium compound represented by the following Formula 1 and comprising a trimethylenemethane-based ligand (L 1 ) and three carbonyl ligands coordinated to divalent ruthenium:
RuL 1 (CO) 3   [Formula 1]

wherein the trimethylenemethane-based ligand L 1 is represented by the following Formula 2:

wherein a substituent R of the ligand L 1 is any one of a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a n-pentyl group, an isopentyl group, and a neopentyl group.

2. A chemical deposition method for a ruthenium thin film or a ruthenium compound thin film, comprising vaporizing a raw material containing an organoruthenium compound to obtain a raw material gas, and introducing the raw material gas together onto a substrate surface while heating the gas,
wherein the method uses the raw material for chemical deposition according to claim 1 as the raw material, and uses hydrogen as a reaction gas.

3. The chemical deposition method according to claim 2 , wherein the method comprises:
applying a reducing gas as the reaction gas, and
introducing the raw material gas onto the substrate surface together with the reaction gas, and heating the gases.

4. The chemical deposition method according to claim 3 , wherein the reducing gas is a gas of any one of hydrogen, ammonia, hydrazine, formic acid, and an alcohol.

5. The chemical deposition method according to claim 2 , wherein the method comprises:
applying either of an oxidizing gas and a gas of an oxygen-containing reactant as the reaction gas, and
introducing the raw material gas onto the substrate surface together with the reaction gas, and heating the gases.

6. The chemical deposition method according to claim 5 , wherein the oxidizing gas is a gas of any one of oxygen and ozone, and the gas of an oxygen-containing reactant is a gas of any one of water and an alcohol.

7. The chemical deposition method according to claim 2 , wherein a film forming temperature is 150° C. or more and 350° C. or less.

8. The chemical deposition method according to claim 3 , wherein a film forming temperature is 150° C. or more and 350° C. or less.

9. The chemical deposition method according to claim 4 , wherein a film forming temperature is 150° C. or more and 350° C. or less.

10. The chemical deposition method according to claim 5 , wherein a film forming temperature is 150° C. or more and 350° C. or less.

11. The chemical deposition method according to claim 6 , wherein a film forming temperature is 150° C. or more and 350° C. or less.

Assignees

• Tanaka Precious Metal Ind

Inventors

• Harada Ryosuke
• Tsugawa Tomohiro
• OOTAKE Shigeyuki
• Iwai Teruhisa
• Lee Seung-Joon

Classifications

• H10P14/42

  using a gas or vapour · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• C23C16/18 Primary

  from metallo-organic compounds · CPC title

• C07F15/0046 Primary

  Ruthenium compounds · CPC title