Quantum dots and composite and display device including the same

Patent metadata

Field	Value
Publication number	US-11912920-B2
Application number	US-202017092368-A
Country	US
Kind code	B2
Filing date	Nov 9, 2020
Priority date	Nov 8, 2019
Publication date	Feb 27, 2024
Grant date	Feb 27, 2024

Abstract

A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.

First claim

What is claimed is:

1. A quantum dot-polymer composite comprising
a polymer matrix; and quantum dots dispersed in the polymer matrix,
wherein the quantum dots comprise a core-shell quantum dot comprising a semiconductor nanocrystal core comprising indium, zinc, and phosphorus, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell comprising zinc, selenium, and sulfur,
wherein
the core-shell quantum dots do not comprise cadmium,
the core-shell quantum dots are configured to emit green light,
the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to 0.75:1 and less than or equal to 1.5:1, and

the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to 35:1 and less than or equal to 60:1.

2. The quantum dot-polymer composite of claim 1 , wherein the core-shell quantum dots have a mole ratio of sulfur to selenium of less than or equal to about 1:1.

3. The quantum dot-polymer composite of claim 1 , wherein a maximum luminescent peak wavelength of the green light is greater than or equal to about 500 nm and less than or equal to about 550 nm.

4. The quantum dot-polymer composite of claim 1 , wherein a quantum efficiency of the quantum dot-polymer composite is greater than or equal to about 80%.

5. The quantum dot-polymer composite of claim 1 , wherein the core-shell quantum dots are configured to have a valley depth defined by the following equation of greater than or equal to about 0.4:
1−(Abs valley /Abs first )=VD

wherein, Abs first is an absorption at the first absorption peak, and Abs valley is an absorption at the lowest point of the valley adjacent to the first absorption peak.

6. The quantum dot-polymer composite of claim 1 , wherein in the core-shell quantum dots,
a mole ratio of sulfur to selenium is less than or equal to about 0.9;
the mole ratio of phosphorus to indium is greater than or equal to about 0.78:1 and less than or equal to about 1.2:1; or
the mole ratio of zinc to indium is greater than or equal to about 43:1 and less than about 52:1.

7. The quantum dot-polymer composite of claim 1 , wherein the core-shell quantum dots have a mole ratio of a sum of sulfur and selenium to indium of greater than or equal to about 10:1 and less than or equal to about 45:1.

8. The quantum dot-polymer composite of claim 1 , wherein the semiconductor nanocrystal shell comprises a first shell layer comprising zinc and selenium, and a second shell layer comprising zinc and sulfur disposed on the first shell layer.

9. The quantum dot-polymer composite of claim 8 , wherein the second shell layer has a thickness of less than about 0.7 nm.

10. The quantum dot-polymer composite of claim 1 , wherein in a photoluminescence spectrum measured at 77K of the core-shell quantum dots, a ratio of a deep trap emission peak area to a total area of a maximum emission peak is less than or equal to about 4%.

11. The quantum dot-polymer composite of claim 1 , wherein the polymer matrix comprises a crosslinked polymer, a binder polymer having a carboxylic acid group, or a combination thereof.

12. A display device comprising
a light source and optionally a light emitting element,
wherein the light emitting element comprises the quantum dot-polymer composite of claim 1 , and
if present, the light source is configured to provide the light emitting element with incident light.

13. The display device of claim 12 , wherein the light emitting element comprises a sheet of the quantum dot-polymer composite; or
the light emitting element comprises a stacked structure comprising a substrate and a light emitting layer disposed on the substrate, the light emitting layer comprising a pattern of the quantum dot-polymer composite.

14. A quantum dot population comprising
core-shell quantum dots comprising a semiconductor nanocrystal core comprising indium, zinc, and phosphorus, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell comprising zinc, selenium, and sulfur,
wherein
the core-shell quantum dots do not comprise cadmium,
the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to 0.75:1 and less than or equal to 1.5:1, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to 35:1 and less than or equal to 60:1, and
the core-shell quantum dots are configured to emit green light having a maximum luminescent peak wavelength of less than or equal to about 540 nm.

15. The quantum dot population of claim 14 , wherein in the core-shell quantum dots, the mole ratio of phosphorus to indium is greater than or equal to about 0.8:1 and less than or equal to about 0.98:1.

16. The quantum dot population of claim 14 , wherein in the core-shell quantum dots, the mole ratio of zinc to indium is greater than or equal to about 40:1 and less than or equal to about 45:1.

17. The quantum dot population of claim 14 , wherein the core-shell quantum dots have a mole ratio of sulfur to selenium of less than or equal to about 1:1, and optionally, wherein n a mole ratio of sulfur to selenium is greater than or equal to about 0.3.

18. The quantum dot population of claim 14 , having an average particle size of greater than or equal to about 5 nanometers and a standard deviation of less than or equal to about 17%.

19. The quantum dot population of claim 14 , wherein the core-shell quantum dots have a quantum efficiency of greater than or equal to about 90%, or
wherein in a photoluminescence spectrum measured at 77K of the core-shell quantum dots, a ration of a deep trap emission peak area to a total area of a maximum emission peak is less than or equal to about 4%.

20. A method of producing the quantum dot population of claim 14 , comprising
preparing the semiconductor nanocrystal core comprising indium, zinc, and phosphorus;
reacting a zinc shell precursor with a selenium precursor and a sulfur precursor, or a combination thereof in the presence of the semiconductor nanocrystal core and a first organic ligand to form a semiconductor nanocrystal shell comprising zinc, selenium, and sulfur disposed on the semiconductor nanocrystal core;
wherein the preparing of the semiconductor nanocrystal core comprises preparing an indium precursor solution by heating an indium compound in the presence of a second organic ligand and an organic solvent;
optionally heating the indium precursor solution; and
mixing the indium precursor solution with a phosphorus precursor and a zinc core precursor, simultaneously or sequentially, and performing a reaction at a reaction temperature,
wherein the amount of the indium precursor solution, the phosphorous precursor, and the zinc core precursor are adjusted to obtain the core-shell quantum dots having the mole ratio of phosphorus to indium of greater than or equal to 0.75:1 and less than or equal to 1.5:1, and the mole ratio of zinc to indium of greater than or equal to 35:1 and less than or equal to 60:1.

21. The method of claim 20 , wherein
the zinc shell precursor does not comprise a halogen, and
the forming of the semiconductor nanocrystal shell comprises injecting a halide and a Lewis base of an additional metal during the reaction of the zinc shell precursor and the sulfur precursor, wherein the additional metal comprises aluminum, magnesium, gallium, antimony, titanium, or a combination thereof.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Taekhoon
• Won Nayoun
• Kim Tae Gon
• Lim Mi Hye
• Jun Shin Ae
• Park Shang Hyeun

Classifications

• C09K11/883 Primary

  with zinc or cadmium · CPC title

• C09K11/02 Primary

  Use of particular materials as binders, particle coatings or suspension media therefor · CPC title

• H10K50/115

  comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title

• B82Y15/00

  Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title