Method for manufacturing a three-dimensional object

US11911954B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11911954-B2
Application numberUS-201716088926-A
CountryUS
Kind codeB2
Filing dateMar 27, 2017
Priority dateApr 1, 2016
Publication dateFeb 27, 2024
Grant dateFeb 27, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The invention pertains to a method for manufacturing a three-dimensional object with an additive manufacturing system, such as an extrusion-based additive manufacturing system, a selective laser sintering system, and/or an electrophotography-based additive manufacturing system, comprising providing a support material comprising more than 50% wt. of a semi-crystalline polyamide [polyamide (A)] having a melting point, as determined according to ASTM D3418, of at least 250° C. and possessing a water absorption at saturation, by immersion in water at 23° C., of at least 2% wt.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for making a three-dimensional object with an additive manufacturing system, the method comprising: printing layers of a support structure from a support material, the support material comprising more than 50% wt. of a semi-crystalline polyamide (A) having a melting point, as determined according to ASTM D3418, of at least 250° C. and possessing a water uptake at saturation, by immersion in water at 23° C., of at least 5 wt. %, printing layers of the three-dimensional object from a part material in coordination with the printing of the layers of the support structure, wherein at least a portion of the printed layers of the support structure support the printed layers of the three-dimensional object, and removing at least a portion of the support structure from the three-dimensional object to obtain the three-dimensional object, wherein the part material is selected from the group consisting of polysulfones, polyethersulfones, polyphenylsulfones, polyaryletherketones, polyetherimides, polyamideimides, polyphenylenesulfides, polyphenylenes, liquid crystal polymers, polycarbonates, aromatic polyamides, and semi-aromatic polyamides; wherein the support material comprises: at least one water-soluble polymeric additive different from polyamide (A), which is selected from the group consisting of polyethyleneglycol (PEG) polymers; polyvinylpyrrolidone (PVP) polymers; polymethylenenaphthalene sulfonates polymers; styrene sultanate polymers having —SO 3 Xa groups, with Xa being H or a metal; sulfonated sulfone polymers having —SO 3 Xa groups, with Xa being H or a metal; polysuccinimides and salts; polyaspartic acids and salts; poly(meth)acrylic acids and salts; polyvinyl sulfonic acids and salts; and polyvinylalcohols. 2. The method of claim 1 , wherein the semi-crystalline polyamide (A) comprises formula: —NH—R 1 —C(O)—  (I), —NH—R 2 —NH—C(O)—R 3 —C(O)—  (II), or both formula (I) and (II), wherein R 1 , R 2 , R 3 , equal to or different from each other, are divalent hydrocarbon chains, and may be aliphatic, alicyclic, cycloaliphatic, aromatic or combinations thereof, wherein R 1 , R 2 , R 3 may contain one or more than one heteroatom selected from the group consisting of O, N, S, P, wherein the recurring units (I) and (II) of the semi-crystalline polyamide (A) comprise a number of carbon atoms in groups R 1 , or R 2 and R 3 per amide group (—C(O)NH—) of less than 8. 3. The method of claim 1 , wherein the semi-crystalline polyamide (A) is a condensation product of at least one mixture selected from: mixtures (M1) comprising at least one diacid (DA), or derivatives thereof, and at least one diamine (NN), or derivatives thereof; mixtures (M2) comprising at least one lactam (L); mixtures (M3) comprising at least one aminocarboxylic acid (AN); and combinations thereof. 4. The method of claim 3 , wherein the diacid (DA) comprises at least one diacid comprising ionisable groups (IDA); and/or wherein the diacid (DA) includes at least one of 4-hydroxyisophthalic acid, 5-hydroxyisophthalic acid, 2-hydroxyterephthalic acid, 2,5-dihydroxyterephthalic acid, 4,6-dihydroxyisophthalic acid, 5-sulfoisophthalic acid and salts thereof, and 2-sulfoterephthalic acid and salts thereof. 5. The method of claim 3 , wherein the at least one diamine (NN) comprises ethereal bonds (NNE). 6. The method of claim 3 , wherein the semi-crystalline polyamide (A) is a polycondensation of (a) mixtures (M1) selected from the group consisting of: (b) mixtures of 1,6-diaminohexane and adipic acid; (c) mixtures of 1,4-diaminobutane and adipic acid; (d) mixtures of 1,5-diaminopentane and adipic acid; (e) mixtures of adipic acid, terephthalic acid, and 1,6-diaminohexane, wherein the amount of the terephthalic acid is at least 25% moles, with respect to the moles of the diacid (DA); (f) mixtures of terephthalic acid, isophthalic acid, and 1,6-diaminohexane, wherein the amount of the terephthalic acid is at least 55% moles, with respect to the moles of the diacid (DA); (g) mixtures of adipic acid, terephthalic acid, isophthalic acid, and 1,6-diaminohexane, wherein the amount of the terephthalic acid is at least 55% moles, with respect to the moles of the diacid (DA); least one diamine comprising ethereal bonds (NNE), optionally in combination with one or more than one aliphatic diamines; (h) mixtures of adipic acid optionally further comprising minor amounts of isophthalic acid, terephthalic acid, or mixtures thereof with respect to the diacid (DA), and at least one diamine comprising ethereal bonds (NNE), optionally in combination with one or more than one aliphatic diamines; (i) mixtures of adipic acid and at least one diacid comprising ionisable groups (IDA), the diacid comprising ionisable groups (IDA) representing at most 15% moles of the total diacid (DA) moles, and 1,6-diaminohexane; (j) mixtures of terephthalic acid and at least one diacid comprising ionisable groups (IDA), the diacid comprising ionisable groups (IDA) representing at most 15% of the total diacid (DA) moles, and 1,6-diaminohexane; (k) mixtures of 1,4-cyclohexanedicarboxylic acid and at least one diamine comprising ethereal bonds (NNE), optionally in combination with one or more than one aliphatic diamines; and (l) mixtures of 1,4-cyclohexanedicarboxylic acid and at least one diacid comprising ionisable groups (IDA), the diacid comprising ionisable groups (IDA) representing at most 15% moles of the total diacid (DA) moles, and at least one diamine comprising ethereal bonds (NNE), optionally in combination with one or more than one aliphatic diamines. 7. The method of claim 1 , wherein the support material comprises a moisture content of less than 0.5% wt., with respect to the total weight of the support material. 8. The method of claim 1 , wherein the method comprises making the three-dimensional object with an extrusion-based additive manufacturing system. 9. The method of claim 8 , wherein the method comprises printing layers of a sacrificial support structure from the provided support material, the method comprising: feeding the support material to a discharge head member having a throughbore ending with a discharge tip, and a circumferential heater to melt the material in the throughbore; compressing the support material with a piston and/or the unmelted filament in said throughbore, while simultaneously melting the support material in the discharge head member, so as to extrude a ribbon of support material from the discharge tip; ensuring relative movement in x and y directions of the discharge tip and of a receiving platform while discharging support material on said receiving platform to form the cross sectional shape of the sacrificial support structure; and ensuring relative movement in the z direction of the discharge tip and the receiving platform while discharging support material on said receiving platform to form the sacrificial support structure in elevation. 10. The method of claim 9 , wherein the step of printing layers of the three-dimensional object from the part material in coordination with the printing of the layers of the support structure further comprises: feeding the part material to a discharge head member having a throughbore ending with a discharge tip, and a circumferential heater to melt the material in the throughbore; b′) compressing the part material with a piston and/or the unmelted filament in said throughbore, while simultaneously melting the part material in the discharge head member, so as to extrude a ribbon of part material from the discharge tip; c) ensuring relative movement in x and y directions of the discharge tip and the receiving platform bearing the sacrificial support struc

Assignees

Inventors

Classifications

  • B29C64/118Primary

    using filamentary material being melted, e.g. fused deposition modelling [FDM] · CPC title

  • by additive layer techniques, e.g. selective laser sintering [SLS], selective laser melting [SLM] or 3D printing · CPC title

  • by additive layer techniques, e.g. selective laser sintering [SLS], selective laser melting [SLM] or 3D printing · CPC title

  • involving the use of fluoropolymers · CPC title

  • Additive manufacturing of workpieces or articles from metallic powder (apparatus or devices therefor B22F12/00) · CPC title

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What does patent US11911954B2 cover?
The invention pertains to a method for manufacturing a three-dimensional object with an additive manufacturing system, such as an extrusion-based additive manufacturing system, a selective laser sintering system, and/or an electrophotography-based additive manufacturing system, comprising providing a support material comprising more than 50% wt. of a semi-crystalline polyamide [polyamide (A)] h…
Who is the assignee on this patent?
Solvay Specialty Polymers Usa
What technology area does this patent fall under?
Primary CPC classification B29C64/118. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Feb 27 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).