Method of manufacturing composite article

Patent metadata

Field	Value
Publication number	US-11911871-B2
Application number	US-201916285605-A
Country	US
Kind code	B2
Filing date	Feb 26, 2019
Priority date	Oct 31, 2018
Publication date	Feb 27, 2024
Grant date	Feb 27, 2024

Abstract

A method of manufacturing a composite article includes providing a polishing pad; rubbing over the polishing pad to produce a polishing pad debris; collecting the polishing pad debris; providing a wood material; and applying a force over the wood material and the polishing pad debris to form the composite article, wherein the composite article includes the wood material and the polishing pad debris, and the rubbing of the polishing pad includes removing a portion of the polishing pad to produce the polishing pad debris.

First claim

The invention claimed is:

1. A method of manufacturing a composite article, comprising:
providing a polishing pad including a rough surface;
providing a semiconductor structure disposed above the polishing pad;
contacting the semiconductor structure with the rough surface of the polishing pad;
rotating the semiconductor structure relative to the polishing pad to generate a semiconductor structure debris peeled off from the semiconductor structure and a polishing pad debris peeled off from the polishing pad;
collecting the polishing pad debris generated during the rotation;
providing a wood material; and
mixing the collected polishing pad debris with the wood material to form the composite article.

2. The method of claim 1 , wherein the semiconductor structure debris includes silicon and is physically separated from the semiconductor structure.

3. The method of claim 1 , wherein the semiconductor structure debris and the polishing pad debris are generated simultaneously during the rotation.

4. The method of claim 1 , wherein a first amount of the polishing pad debris in the composite article is less than a second amount of the wood material in the composite article.

5. The method of claim 4 , wherein a ratio of the first amount to the second amount is about 3:7.

6. The method of claim 1 , wherein the polishing pad debris is physically separated from the polishing pad upon the compression.

7. The method of claim 1 , wherein the polishing pad is rotated upon the rotation of the semiconductor structure.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chiang Hua-Chou
• See Chandler Ying Lai
• Ko Chung-Chieh

Classifications

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• B24B47/12

  by mechanical gearing or electric power (B24B47/16 takes precedence) · CPC title

• B24B37/042

  operating processes therefor · CPC title