Nanotwinned structure
US-2020236782-A1 · Jul 23, 2020 · US
US11901585B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11901585-B2 |
| Application number | US-202016953656-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 20, 2020 |
| Priority date | Nov 23, 2019 |
| Publication date | Feb 13, 2024 |
| Grant date | Feb 13, 2024 |
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A method of forming a component can include electrochemically depositing a metallic material onto a carrier component to a thickness of greater than 50 microns. The metallic material can include crystal grains and at least 90% of the crystal grains can include nanotwin boundaries. The metallic material can include at least one of copper or silver.
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What is claimed is: 1. A stock material, comprising: a metallic material comprising crystal grains and having a thickness of greater than 50 microns; and at least 90% of the crystal grains comprising nanotwin boundaries, wherein the crystal grains are equiaxial. 2. The stock material of claim 1 , wherein the metallic material comprises a continuous sheet having a length of at least 2 cm. 3. The stock material of claim 1 , wherein the metallic material comprises copper. 4. The stock material of claim 1 , wherein the metallic material comprises silver. 5. The stock material of claim 1 , wherein the metallic material comprises an alloy of copper and silver. 6. The stock material of claim 1 , wherein the crystal grains have an average spacing between nanotwin boundaries of less than 200 nanometers (nm). 7. The stock material of claim 1 , wherein at least 95% of the crystal grains comprise nanotwin boundaries. 8. The stock material of claim 1 , wherein the thickness is greater than 100 microns. 9. An electronic device, comprising: a conductive component comprising a metallic material including crystal grains, the metallic material having a thickness of greater than 50 microns; and at least 90% of the crystal grains comprising nanotwin boundaries, wherein the crystal grains are equiaxial, the metallic material having a hardness greater than 225 Hv. 10. The electronic device of claim 9 , wherein the conductive component is an electrically conductive component. 11. The electronic device of claim 10 , wherein the electrically conductive component comprises a charging receptacle. 12. The electronic device of claim 10 , wherein the electrically conductive component comprises an electrical connector between two electronic components. 13. The electronic device of claim 12 , wherein the two electronic components comprise printed circuit boards. 14. The electronic device of claim 10 , wherein the electrically conductive component comprises a battery. 15. The electronic device of claim 9 , wherein the conductive component is a thermally conductive component. 16. The electronic device of claim 15 , wherein the thermally conductive component comprises a support plate. 17. The electronic device of claim 15 , wherein the thermally conductive component comprises a non-planar shape and mechanically supports a component affixed to the thermally conductive component. 18. A battery, comprising: an electrochemical cell comprising an electrolyte, an anode, and a cathode; and a current collector electrically coupled to one of the anode or the cathode, the current collector comprising a metallic material including crystal grains, at least 90% of the crystal grains comprising nanotwin boundaries, wherein the crystal grains are equiaxial, and wherein the metallic material has a hardness greater than 225 Hv. 19. The battery of claim 18 , wherein the metallic material comprises at least one of copper or silver. 20. The battery of claim 18 , wherein the metallic material has a thickness of less than 10 microns. 21. The battery of claim 18 , wherein the electrochemical cell is a lithium-ion electrochemical cell.
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