Power conversion unit

Patent metadata

Field	Value
Publication number	US-11894780-B2
Application number	US-201917428479-A
Country	US
Kind code	B2
Filing date	Nov 22, 2019
Priority date	Nov 22, 2019
Publication date	Feb 6, 2024
Grant date	Feb 6, 2024

Abstract

A power conversion unit includes a plurality of semiconductor modules, a gate drive circuit, a first substrate having a flat plate shape, and a second substrate having a flat plate shape. The first substrate has a first surface facing a bottom plate of a casing accommodating the semiconductor modules and the gate drive circuit, and a second surface on an opposite side to the first surface. The second substrate is arranged above the first substrate in parallel with the second surface. The semiconductor modules are mounted on the first surface. The gate drive circuit is formed on a surface of the second substrate on a side that does not face the second surface. The power conversion unit further includes a connector provided on the second surface and connected to a surface on a side facing the second substrate.

First claim

The invention claimed is:

1. A power conversion unit comprising:
a plurality of semiconductor modules each including a semiconductor switching element;
a gate drive circuit that drives the semiconductor modules;
a first substrate having a flat plate shape, the first substrate including a first surface facing a bottom plate of a casing accommodating the semiconductor modules and the gate drive circuit, and a second surface on an opposite side to the first surface; and
a second substrate having a flat plate shape, the second substrate being arranged above the first substrate in parallel with the second surface, wherein
the semiconductor modules are mounted on the first surface,
the gate drive circuit is formed on a surface of the second substrate on a side that does not face the second surface,
the power conversion unit further comprising:
a connector provided on the second surface and connected to a surface on a side facing the second substrate; and
a heat sink mounted on the first surface, wherein
the heat sink includes a base having a flat plate shape provided vertically to the first surface and fins fixed to both surfaces of the base,
the semiconductor modules are arranged side by side on both surfaces of the base, and
a path through which cooling air passes is formed in a gap between the bottom plate and the first surface.

2. The power conversion unit according to claim 1 , further comprising a plurality of capacitors,
wherein the capacitors are mounted on the first surface.

3. The power conversion unit according to claim 1 , further comprising:
a control device that generates a gate signal for controlling the semiconductor switching element of each of the semiconductor modules and outputs the gate signal to the gate drive circuit; and
a third substrate having a flat plate shape, the third substrate being arranged above the second substrate in parallel with the second substrate,
wherein the control device is disposed on a surface of the third substrate on a side that does not face the second substrate.

Assignees

• Toshiba Mitsubishi Elec Ind

Inventors

• Nakamura Koki
• Nakamori Toshiki

Classifications

• H02M7/003 Primary

  Constructional details, e.g. physical layout, assembly, wiring or busbar connections · CPC title

• H02M1/123

  Suppression of common mode voltage or current · CPC title

• H02M5/4585

  having a rectifier with controlled elements · CPC title

• H02M7/48

  using discharge tubes with control electrode or semiconductor devices with control electrode · CPC title

• H05K7/209

  Heat transfer by conduction from internal heat source to heat radiating structure (H05K7/20909 takes precedence) · CPC title