Terahertz device and production method for terahertz device

Patent metadata

Field	Value
Publication number	US-11894494-B2
Application number	US-201917266008-A
Country	US
Kind code	B2
Filing date	Jul 26, 2019
Priority date	Aug 23, 2018
Publication date	Feb 6, 2024
Grant date	Feb 6, 2024

Abstract

A terahertz device includes a terahertz element, a sealing resin, a wiring layer and a frame-shaped member. The terahertz element that performs conversion between terahertz waves and electric energy. The terahertz element has an element front surface and an element back surface spaced apart from each other in a first direction. The sealing resin covers the terahertz element. The wiring layer is electrically connected to the terahertz element. A frame-shaped member is made of a conductive material and arranged around the terahertz element as viewed in the first direction. The frame-shaped member has a reflective surface capable of reflecting the terahertz waves.

First claim

The invention claimed is:

1. A terahertz device comprising:
a terahertz element configured to perform conversion between terahertz waves and electric energy and having an element front surface and an element back surface spaced apart from each other in a first direction;
a sealing resin covering the terahertz element;
a wiring layer electrically connected to the terahertz element; and
a frame-shaped member made of a conductive material and arranged around the terahertz element as viewed in the first direction,
wherein the frame-shaped member has a reflective surface capable of reflecting the terahertz waves.

2. The terahertz device according to claim 1 , wherein the terahertz element further includes an element side surface located between and connected to the element front surface and the element back surface, and
part of the sealing resin is interposed between the element side surface and the frame-shaped member.

3. The terahertz device according to claim 2 , wherein the frame-shaped member is spaced apart from the wiring layer.

4. The terahertz device according to claim 3 , wherein the frame-shaped member has a shape of a ring surrounding the terahertz element as viewed in the first direction.

5. The terahertz device according to claim 4 , wherein the frame-shaped member has an inner peripheral surface functioning as the reflective surface and an outer peripheral surface, and
the frame-shaped member is formed with a slit extending from the inner peripheral surface to the outer peripheral surface as viewed in the first direction.

6. The terahertz device according to claim 5 , wherein the frame-shaped member includes a plurality of metal pieces separated from each other by the slit as viewed in the first direction, and
a sum of lengths of the metal pieces in respective longitudinal directions is smaller than a sum of respective distances between two adjacent ones of the metal pieces flanking the slit.

7. The terahertz device according to claim 1 , further comprising a support board supporting the terahertz element, the support board having a support-board front surface facing the element back surface and a support-board back surface facing away from the support-board front surface.

8. The terahertz device according to claim 7 , further comprising an external electrode electrically connected to the wiring layer and exposed from the sealing resin.

9. The terahertz device according to claim 8 , further comprising a through electrode penetrating the support board and electrically connecting the wiring layer and the external electrode.

10. The terahertz device according to claim 9 , wherein the support board is formed with a through-hole extending from the support-board front surface to the support-board back surface, and
the through electrode fills the through-hole.

11. The terahertz device according to claim 7 , wherein the wiring layer is formed on the support board, and
the terahertz device further comprises a bonding layer interposed between the terahertz element and the wiring layer, the bonding layer electrically connecting and bonding the terahertz element and the wiring layer.

12. The terahertz device according to claim 7 , wherein the frame-shaped member stands on the support-board front surface.

13. The terahertz device according to claim 12 , wherein the element front surface overlaps with the frame-shaped member as viewed in a second direction orthogonal to the first direction.

14. The terahertz device according to claim 1 , further comprising a semiconductor element different from the terahertz element,
wherein the frame-shaped member surrounds the terahertz element and the semiconductor element as viewed in the first direction.

15. The terahertz device according to claim 1 , further comprising a semiconductor element different from the terahertz element,
wherein the semiconductor element is arranged outside the frame-shaped member as viewed in the first direction.

16. The terahertz device according to claim 1 , further comprising an emission controlling member that controls emission of the terahertz waves, the emission controlling member overlapping the element front surface as viewed in the first direction.

17. The terahertz device according to claim 1 , wherein the sealing resin has a resin front surface facing in a direction in which the element front surface faces and a resin back surface facing away from the resin front surface in the first direction,
the resin front surface is rougher than the resin back surface.

18. The terahertz device according to claim 1 , wherein the element front surface is exposed from the sealing resin.

19. A method for manufacturing a terahertz device comprising a terahertz element configured to perform conversion between terahertz waves and electric energy and having an element front surface and an element back surface spaced apart from each other in a first direction, the method comprising:
a support board preparation step for preparing a support board having a support-board front surface and a support-board back surface facing away from each other in the first direction;
a frame-shaped member forming step for forming a frame-shaped member from a conductive material on the support board;
a wiring layer forming step for forming a wiring layer electrically connected to the terahertz element;
an element mounting step for mounting the terahertz element on the support board such that the frame-shaped member is positioned around the terahertz element as viewed in the first direction;
a sealing resin forming step for forming a sealing resin covering the terahertz element; and
a grinding step for grinding the support board,
wherein the frame-shaped member has a reflective surface capable of reflecting the terahertz waves.

20. The method for manufacturing a terahertz device according to claim 19 , further comprising:
an external electrode forming step for forming an external electrode electrically connected to the wiring layer; and
a through electrode forming step for forming a through electrode extending through the support board and electrically connecting the wiring layer and the external electrode,
wherein the wiring layer forming step comprises forming the wiring layer on the support-board front surface,
the grinding step comprises grinding the support board from the support-board back surface until the through electrode is exposed from the support-board back surface, and
the external electrode forming step comprises forming the external electrode on a surface of the through electrode that is exposed from the support-board back surface.

Assignees

• Rohm Co Ltd

Inventors

• Tsuruda Kazuisao
• Kim Jaeyoung
• Yanagida Hideaki
• Mukai Toshikazu

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W44/248

  for antennas · CPC title

• H10W44/259

  Optical signal interface · CPC title

• H10W44/209

  Vertical interconnections, e.g. vias · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title