Compact hyperspectral spectrometers based on semiconductor nanomembranes

Patent metadata

Field	Value
Publication number	US-11894399-B2
Application number	US-202117189394-A
Country	US
Kind code	B2
Filing date	Mar 2, 2021
Priority date	Mar 2, 2021
Publication date	Feb 6, 2024
Grant date	Feb 6, 2024

Abstract

Hyperspectral resonant cavity imaging spectrometers and imaging systems incorporating the resonant cavity spectrometers are provided. The spectrometers include an array of photodetectors based on photosensitive semiconductor nanomembranes disposed between two dielectric spacers, each of the dielectric spacers having a thickness gradient along a lateral direction, such that the resonant cavity height differs for different photodetectors in the array.

First claim

What is claimed is:

1. A resonant cavity spectrometer comprising:
a reflector;
a first dielectric spacer disposed over the reflector, the first dielectric spacer having a thickness gradient along a lateral direction;
a second dielectric spacer disposed above the first dielectric spacer, the second dielectric spacer having a thickness gradient along a lateral direction; and
a pixel array comprising a plurality of photodetectors, the photodetectors comprising photosensitive semiconductor nanomembranes, disposed between the first dielectric spacer and the second dielectric spacer, wherein the reflector, the first dielectric spacer, and the second dielectric spacer define a resonant cavity having a cavity height gradient along at least one lateral direction.

2. The spectrometer of claim 1 , wherein the thickness gradient of the first dielectric spacer is along a first lateral direction and the thickness gradient of the second dielectric spacer is along a second lateral direction that is different from the first lateral direction.

3. The spectrometer of claim 1 , wherein the first lateral direction and the second lateral direction are separated by an angle of 90°.

4. The spectrometer of claim 1 , wherein one or more of the photodetectors comprises a first photosensitive semiconductor nanomembrane and one or more of the photodetectors comprises a second photosensitive semiconductor nanomembrane.

5. The spectrometer of claim 4 , wherein the first photosensitive semiconductor nanomembrane is a silicon nanomembrane and the second photosensitive semiconductor nanomembrane is a germanium nanomembrane.

6. The spectrometer of claim 1 , wherein the photosensitive semiconductor nanomembranes comprise photosensitive semiconductor nanomembranes that are photosensitive in the visible region of the electromagnetic spectrum, the near infrared region of the electromagnetic spectrum, or both the visible and the near infrared regions of the electromagnetic spectrum.

7. The spectrometer of claim 1 , wherein the photodetectors are metal-semiconductor-metal photodetectors.

8. The spectrometer of claim 1 , wherein the pixel array comprises at least one hundred photodetectors.

9. The spectrometer of claim 1 , wherein the resonant cavity has a maximum resonant cavity height of no greater than 5 μm.

10. The spectrometer of claim 1 , wherein a maximum thickness of the thickness gradients of the first and second dielectric spacers is in the range from 500 nm to 2000 nm and a minimum thickness of the thickness gradient of the first and second dielectric spacers is in the range from 10 nm to 100 nm.

11. The spectrometer of claim 1 , wherein the first and second dielectric spacers have a maximum lateral dimension of 20 mm or smaller and a combined height of the reflector, the first dielectric spacer, and the second dielectric spacer is less than 1 mm.

12. The spectrometer of claim 11 , wherein the pixel array comprises at least one hundred photodetectors.

13. The spectrometer of claim 1 , wherein the first and second dielectric spacers comprise a metal oxide, or a nitride, or a semimetal oxide.

14. The spectrometer of claim 1 , wherein the pixel array comprises at least one hundred photoconductors, the photoconductors include metal-semiconductor-metal photodetectors comprising silicon nanomembranes and metal-semiconductor-metal photodetectors comprising germanium nanomembranes, and the first and second dielectric spacers comprise aluminum oxide.

15. The spectrometer of claim 14 , wherein the first and second dielectric spacers have a maximum lateral dimension of 20 mm or smaller and a combined height of the reflector, the first dielectric spacer, and the second dielectric spacer is less than 1 mm.

16. The spectrometer of claim 15 , wherein the thickness gradient of the first dielectric spacer is along a first lateral direction and the thickness gradient of the second dielectric spacer is along a second lateral direction that is different from the first lateral direction.

17. The spectrometer of claim 16 , wherein the first lateral direction and the second lateral direction are separated by an angle of 90°.

18. The spectrometer of claim 1 , wherein the resonant cavity height is different for every photodetector in the pixel array.

19. The spectrometer of claim 1 , further comprising:
a readout circuit connected to the photodetectors in the pixel array and configured to receive output signals from the photodetectors;
a processor coupled to the readout circuit and configured to generate an image based on the output signals; and
a display device coupled to the processor and configured to display the image generated by the processor.

Assignees

• Wisconsin Alumni Res Found
• Univ New York State Res Found

Inventors

• Ma Zhenqiang
• Xia Zhenyang
• Zhou Ming
• Gan Qiaoqiang
• Yu Zongfu

Classifications

• H10F39/8067

  Reflectors · CPC title

• H10F39/8023 Primary

  Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery · CPC title

• H01L27/14605 Primary

  Electricity · mapped topic

• G01J3/021

  using plane or convex mirrors, parallel phase plates, or particular reflectors · CPC title

• G01J3/2803

  using photoelectric array detector · CPC title