Storage container storing treatment liquid for manufacturing semiconductor

Patent metadata

Field	Value
Publication number	US-11892775-B2
Application number	US-202217676235-A
Country	US
Kind code	B2
Filing date	Feb 21, 2022
Priority date	Mar 31, 2016
Publication date	Feb 6, 2024
Grant date	Feb 6, 2024

Abstract

A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores the treatment liquid, wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.

First claim

What is claimed is:

1. A storage container comprising:
a treatment liquid for manufacturing a semiconductor; and

a storage portion that stores the treatment liquid,
wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and
a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing the semiconductor,
wherein a mass of the particulate metal is measured by a SP-ICP-MS method.

2. The storage container according to claim 1 ,
wherein an inner wall of the storage portion that comes into contact with the treatment liquid is cleaned using a cleaning liquid having a contact angle of 10 degrees to 120 degrees on the inner wall before being filled with the treatment liquid.

3. The storage container according to claim 2 ,
wherein the cleaning liquid is ultrapure water or a liquid including at least one of components included in the treatment liquid.

4. The storage container according to claim 1 ,
wherein at least a portion of an inner wall of the storage portion that comes into contact with the treatment liquid is formed of a material including at least one selected from the group consisting of polyethylene, polypropylene, polytetrafluoroethylene, and perfluoroalkoxy alkane.

5. The storage container according to claim 1 ,
wherein at least a portion of an inner wall of the storage portion that comes into contact with the treatment liquid is formed of a material including at least one selected from the group consisting of stainless steel and nickel-chromium alloy.

6. The storage container according to claim 1 ,
wherein at least a portion of an inner wall of the storage portion that comes into contact with the treatment liquid is formed of a material including at least one selected from the group consisting of stainless steel and nickel-chromium alloy, and
a mass ratio represented by Cr/Fe in a portion having a depth of 1 nm from an outermost surface of the inner wall is 1 to 3.

7. The storage container according to claim 1 ,
wherein an occupancy ratio of a void portion in the storage portion storing the treatment liquid is 50 to 0.01 vol %.

8. The storage container according to claim 1 ,
wherein a void portion of the storage portion storing the treatment liquid is filled with gas in which the number of particles having a diameter of 0.5 μm or more is 10 particles/L or less.

9. The storage container according to claim 1 ,
wherein a void portion of the storage portion storing the treatment liquid is filled with inert gas, wherein the inert gas comprising nitrogen or argon.

10. The storage container according to claim 1 ,
wherein the treatment liquid is a developer or a rinsing liquid.

11. The storage container according to claim 1 ,
wherein the treatment liquid includes a quaternary ammonium salt.

12. The storage container according to claim 1 ,
wherein the treatment liquid includes at least one selected from the group consisting of butyl acetate, N-methyl-2-pyrrolidone, isopropanol, ethanol, and methyl isobutyl carbinol.

13. The storage container according to claim 1 ,
wherein the pH of the treatment liquid is 10.0 to 15.0.

14. The storage container according to claim 1 ,
wherein the treatment liquid includes a surfactant.

15. The storage container according to claim 1 ,
wherein the treatment liquid includes at least one selected from the group consisting of butyl acetate, N-methyl-2-pyrrolidone, isopropanol, ethanol, methyl isobutyl carbinol, propylene glycol monomethyl ether, cyclohexanone, γ-butyrolactone, ethyl lactate, dimethyl sulfoxide, isoamyl acetate, a mixed solution of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether, methyl 2-hydroxyisobutyrate, methyl ethyl ketone, and propylene carbonate.

16. The storage container according to claim 1 ,
wherein the treatment liquid includes at least one selected from the group consisting of butyl acetate, methyl isobutyl carbinol and isoamyl acetate.

17. The storage container according to claim 1 ,
wherein the treatment liquid includes at least one selected from the group consisting of propylene glycol monomethyl ether, cyclohexanone, ethyl lactate, a mixed solution of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether, and methyl 2-hydroxyisobutyrate.

18. The storage container according to claim 1 ,
wherein the treatment liquid includes at least isopropanol.

19. A storage container comprising:
a treatment liquid for manufacturing a semiconductor; and

a storage portion that stores the treatment liquid,
wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and
a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing the semiconductor,
wherein an inner wall of the storage portion that comes into contact with the treatment liquid is cleaned using a cleaning liquid having a contact angle of 10 degrees to 120 degrees on the inner wall before being filled with the treatment liquid.

Assignees

• Fujifilm Corp

Inventors

• Shimizu Tetsuya
• Kamimura Tetsuya

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• G03F7/425

  containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen · CPC title

• G03F7/327

  Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts · CPC title