Semiconductor device with a steep sub-threshold slope
US-2018033864-A1 · Feb 1, 2018 · US
US11890846B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11890846-B2 |
| Application number | US-202117186405-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 26, 2021 |
| Priority date | Mar 3, 2020 |
| Publication date | Feb 6, 2024 |
| Grant date | Feb 6, 2024 |
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The present disclosure relates to a method of transferring a graphene, the method comprising the steps of: forming a graphene on a first substrate; forming a polymer precursor mixture on a second substrate; disposing the graphene oppositely to the second substrate having the polymer precursor mixture formed thereon; pressing the first substrate and the second substrate while curing the polymer precursor mixture; and peeling off the first substrate.
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What is claimed is: 1. A method of transferring graphene, the method comprising the steps of: forming a graphene on a first substrate; forming a polymer precursor mixture on a second substrate; disposing the graphene oppositely to the second substrate having the polymer precursor mixture formed thereon; pressing the first substrate and the second substrate while curing the polymer precursor mixture; and peeling off the first substrate, wherein the polymer precursor mixture contains: a dopant material comprising an amine group-containing polymer or a precursor thereof; and a curing agent selected from the group consisting of glutaraldehyde, propylene dialdehyde, butyl dialdehyde, succinaldehyade, pentane-2,4-dione, acetylacetone, acetonylacetone, and combinations thereof. 2. The method according to claim 1 , wherein the dopant material is cross-linked by the curing agent so that a network-structured polymer is formed. 3. The method according to claim 1 , wherein the polymer precursor mixture comprises the dopant material and the curing agent at a ratio of 10:1 to 1,000:1. 4. The method according to claim 1 , wherein the curing process is carried out under a temperature of 100° C. to 200° C. 5. The method according to claim 1 , wherein the step of forming the polymer precursor mixture is carried out by a method selected from the group consisting of a spin coating method, a cast method, Langmuir-Blodgett method, an inkjet printing method, a nozzle printing method, a slot die coating method, a doctor blade coating method, a screen printing method, a dip coating method, a gravure printing method, a reverse offset printing method, a physical transfer method, a spray coating method, a chemical vapor deposition method, a thermal deposition method, a vacuum deposition method, and combinations thereof. 6. The method according to claim 1 , wherein the step of forming a graphene on the first substrate is carried out by forming a metal catalyst on the first substrate, and performing a heat treatment process while injecting a gas-phase carbon supply source. 7. The method according to claim 6 , wherein the first substrate includes a substrate selected from the group consisting of glass, plastics, silicon, sapphire, nitride, and combinations thereof. 8. The method according to claim 6 , wherein the catalyst is selected from the group consisting of Cu, Ni, Sc, Ti, V, Cr, Mn, Fe, Co, Zn, Al, Ti, Si, Mg, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Rf, and combinations thereof. 9. The method according to claim 6 , wherein the gas-phase carbon supply source includes a material selected from the group consisting of methane, ethane, ethylene, carbon monoxide, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene, toluene, and combinations thereof. 10. The method according to claim 1 , wherein the second substrate is selected from the group consisting of polyethylene naphthalate, silicone, polyimide, polycarbonate, polynorbornene, polyacrylate, polyvinyl alcohol, polyethylene terephthalate, polyethersulfone, polystyrene, polypropylene, polyethylene, polyvinyl chloride, polyamide, polybutylene terephthalate, polymethacrylate, polydimethylsiloxane, and combinations thereof. 11. The method according to claim 1 , wherein the graphene is n-type doped while the polymer precursor mixture is being cured. 12. A flexible transparent electrode comprising a graphene transferred by a method of transferring a graphene according to claim 1 . 13. The method according to claim 1 , wherein pressing the first substrate and the second substrate while curing the polymer precursor mixture further comprises: pressing the first substrate and the second substrate together with strong binding force by applying mechanical force to top and bottom surfaces. 14. The method according to claim 1 , wherein peeling off the first substrate further comprises: delaminating the graphene by applying a mechanical force and peeling off the first substrate.
Transfer laminating · CPC title
comprising carbon, e.g. graphite, composite carbon · CPC title
using curing agents · CPC title
comprising synthetic resins not wholly covered by any one of the sub-groups {B32B27/30 - B32B27/42} · CPC title
Delaminating · CPC title
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