Light emitting diode device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-11876154-B2
Application number	US-202016796375-A
Country	US
Kind code	B2
Filing date	Feb 20, 2020
Priority date	Aug 21, 2017
Publication date	Jan 16, 2024
Grant date	Jan 16, 2024

Abstract

A light-emitting diode (LED) device includes a first epitaxial layered structure having an upper surface having different first and second regions, a second epitaxial layered structure spaced-apart disposed on the first epitaxial layered structure, a light conversion layer formed on the first region, a bonding unit disposed on the light conversion layer, the bonding unit and the light conversion layer interconnecting the first and second epitaxial layered structures, and an electrically conductive structure formed on the second region and electrically connects the first and second epitaxial layered structures. A method for manufacturing the LED device is also disclosed.

First claim

What is claimed is:

1. A light-emitting diode device, comprising:
a first epitaxial layered structure which emits light of a first wavelength range, and which has an upper surface having a first region and a second region different from said first region;
a second epitaxial layered structure which emits light of a second wavelength range different from the first wavelength range, which is spaced-apart disposed on said upper surface of said first epitaxial layered structure, and which has a band gap smaller than that of said first epitaxial layered structure;
a light conversion layer that is formed on said first region of said upper surface of said first epitaxial layered structure and that is configured to be excited by light of the first wavelength range emitted from the first epitaxial layered structure to emit light of a third wavelength range different from the first wavelength range;
a bonding unit that is disposed on said light conversion layer and that is configured to allow light of the third wavelength range emitted from said light conversion layer to pass therethrough and, said bonding unit and said light conversion layer interconnecting said first and second epitaxial layered structures; and
an electrically conductive structure that is formed on said second region of said upper surface of said first epitaxial layered structure and that electrically connects said first epitaxial layered structure to said second epitaxial layered structures;
wherein said bonding unit is configured to selectively allow light having a wavelength that falls within the third wavelength range to pass therethrough, and to filter out light having a wavelength that falls outside the third wavelength range, and
wherein light of the third wavelength range emitted from said light conversion layer has a peak wavelength that is substantially equal to a peak wavelength of light of the second wavelength range emitted from said second epitaxial layered structure.

2. The light-emitting diode device according to claim 1 , wherein said light conversion layer has a thickness ranging from 0.5 μm to 100 μm.

3. The light-emitting diode device according to claim 1 , wherein said light conversion layer includes red phosphor, and wherein light of the second wavelength range is red light, and light of the third wavelength range is red light.

4. The light-emitting diode device according to claim 1 , wherein said bonding unit includes a plurality of light-transmissive films stacked on one another.

5. The light-emitting diode device according to claim 1 , wherein said bonding unit is made of a band-pass material.

6. The light-emitting diode device according to claim 1 , wherein said bonding unit includes a first transparent optical layer disposed on said first epitaxial layered structure, and a second transparent optical layer disposed between said first transparent optical layer and said second epitaxial layered structure.

7. The light-emitting diode device according to claim 1 , wherein said electrically conductive structure is immediately adjacent to said light conversion layer and penetrates said bonding unit.

8. The light-emitting diode device according to claim 1 , wherein said electrically conductive structure includes a first ohmic contact layer formed on said first epitaxial layered structure and a second ohmic contact layer formed between said first epitaxial layered structure and said second epitaxial layered structure.

9. The light-emitting diode device according to claim 8 , wherein said electrically conductive structure further includes a metallic layer disposed between said first ohmic contact layer and said second ohmic contact layer.

10. The light-emitting diode device according to claim 1 , wherein said light conversion layer includes green phosphor, and wherein light of the first wavelength range is blue light, light of the second wavelength range is red light, and light of the third wavelength range is green light that is allowed to pass through said bonding unit to mix with the red light so as to form yellow light.

11. The light-emitting diode device according to claim 1 , wherein:
said upper surface of said first epitaxial layered structure further has a third region that is different from said first and second regions and that is exposed from said light conversion layer and said electrically conductive structure,
said bonding unit is formed on a portion of said light conversion layer such that the remainder of said light conversion layer is exposed from said bonding unit.

12. The light-emitting diode device according to claim 11 , wherein said light conversion layer includes green phosphor, and wherein light of the first wavelength range is blue light, light of the second wavelength range is red light, and light of the third wavelength range is green light, the blue light from said third region of said first epitaxial layered structure, the green light from said remainder of said light conversion layer and the red light from said second epitaxial layered structure being mixed to form white light.

13. The light-emitting diode device according to claim 1 , wherein said upper surface of said first epitaxial layered structure is not smaller in size than a projection of an outline of said light conversion layer on said first epitaxial layered structure.

14. The light-emitting diode device according to claim 1 , wherein a projection of an outline of said light conversion layer on said first epitaxial layered structure is not smaller in size than a projection of an outline of said bonding unit on said first epitaxial layered structure.

15. The light-emitting diode device according to claim 1 , wherein said second epitaxial layered structure is invertedly disposed on said first epitaxial layered structure.

16. The light-emitting diode device according to claim 15 , wherein said first epitaxial layered structure includes a first N-type semiconductor layer, a first active layer disposed on said first N-type semiconductor layer, and a first P-type semiconductor layer disposed on said first active layer, and wherein said second epitaxial layered structure includes a second P-type semiconductor layer, a second active layer, and a second N-type semiconductor layer stacked on one another in a direction away from said first epitaxial layered structure.

17. A light-emitting diode device, comprising:
a first epitaxial layered structure which emits light of a first wavelength range, and which has an upper surface having a first region and a second region different from said first region;
a second epitaxial layered structure which emits light of a second wavelength range different from the first wavelength range, which is spaced-apart disposed on said upper surface of said first epitaxial layered structure, and which has a band gap smaller than that of said first epitaxial layered structure;
a light conversion layer that is formed on said first region of said upper surface of said first epitaxial layered structure and that is configured to be excited by light of the first wavelength range emitted from said first epitaxial layered structure to emit light of a third wavelength range different from the first wavelength range, said light conversion layer including green phosphor;
a bonding unit that is disposed on said light conversion layer and that is configured to allow light of the third wavelength range emitted from said light conversion layer to pass therethrough and, said bonding unit and said light conversion layer interconnecting said first and second epitaxial layered structures; and
an electrically conduc

Assignees

• Xiamen Sanan Optoelectronics Co Ltd

Inventors

• Li Mingyang
• Liu Guanzhou
• Bi Jingfeng
• Li Senlin
• Song Minghui
• Chen Wenjun

Classifications

• H10H20/0364

  of interconnections · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title

• H10H20/8516

  having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/8513 Primary

  having two or more wavelength conversion materials · CPC title