Organic photomultiplication photodetector with bi-directional bias response and method for producing same

Patent metadata

Field	Value
Publication number	US-11871648-B2
Application number	US-202117542999-A
Country	US
Kind code	B2
Filing date	Dec 6, 2021
Priority date	Mar 19, 2021
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

This application relates to preparation of organic photomultiplication photodetectors, and more particularly to an organic photomultiplication photodetector with bi-directional bias response and a method for producing the same. The photodetector includes an anode layer, an anode modification layer, an interfacial modification layer, an active layer and a cathode layer arranged in sequence. The interfacial modification layer is made of Al 2 O 3 . The anode layer is made of indium tin oxide (ITO). The anode modification layer is made of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS). The active layer is made of poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C 70 -butyric acid methyl ester (P3HT:PC 70 BM). The cathode layer is made of aluminum, silver or gold.

First claim

What is claimed is:

1. A method for preparing an organic photomultiplication photodetector, the organic photomultiplication photodetector comprising:
an anode layer;
an anode modification layer;
an interfacial modification layer made of aluminum oxide (Al 2 O 3 );
an active layer; and
a cathode layer;
the method comprising:
(S1) preparing a solution of the active layer;
(S2) cleaning an indium tin oxide (ITO) glass substrate followed by processing with a plasma cleaner to be used as the anode layer; and applying a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) layer on the anode layer by spin-coating as the anode modification layer;
(S3) depositing Al 2 O 3 on the anode modification layer by atomic layer deposition (ALD) to obtain an Al 2 O 3 film as the interfacial modification layer;
(S4) applying a poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C 70 -butyric acid methyl ester (P3HT:PC 70 BM) layer on the interfacial modification layer by spin coating as the active layer; and
(S5) depositing a layer of aluminum, silver or gold on the active layer by thermal evaporation as the cathode layer.

2. The method of claim 1 , wherein in step (S1), the solution of the active layer is prepared through steps of:
respectively dissolving 40 mg of poly(3-hexylthiophene-2,5-diyl) (P3HT) and 40 mg of [6,6]-phenyl-C 70 -butyric acid methyl ester (PC 70 BM) in 1 mL of 1,2-dichlorobenzene (o-DCB) followed by stirring at 60° C. to produce a P3HT solution and a PC 70 BM solution; and mixing a 0.01 mL of the PC 70 BM solution and 1 mL of the P3HT solution followed by stirring at 60° C. to obtain the solution of the active layer, wherein a weight ratio of P3HT to PC 70 BM is 100:1.

3. The method of claim 1 , wherein in step (S2), after the PEDOT:PSS layer is spin-coated on the ITO glass substrate, the ITO glass substrate coated with the PEDOT:PSS layer is placed on a heating table, annealed at 120° C. for 15 minutes, and subjected to standing at room temperature for at least 5 minutes before proceeding to step (S3).

4. The method of claim 1 , wherein in step (S3), the interfacial modification layer is prepared through steps of:
reacting trimethylaluminum with water vapor at 150° C. to produce Al 2 O 3 ; and depositing the Al 2 O 3 on the anode modification layer followed by vacuum standing for at least 5 minutes;
wherein the Al 2 O 3 is deposited at a rate of 0.1 nm/one cycle, and the number of cycles is controlled to determine a thickness of the Al 2 O 3 film.

5. The method of claim 1 , wherein the step of applying a P3HT:PC 70 BM layer on the interfacial modification layer by spin-coating as the active layer comprises:
applying the solution of the active layer on the interfacial modification layer by spin coating at a rotation speed of 1200 rpm followed by annealing at 80° C. for 20 seconds and standing in a glove box for at least 3 minutes.

Assignees

• Univ Taiyuan Technology

Inventors

• Shi Linlin
• Cui Yanxia
• Li Guohui
• Zhang Ye
• Wang Wenyan
• Ji Ting

Classifications

• H10K85/1135 Primary

  Polyethylene dioxythiophene [PEDOT]; Derivatives thereof · CPC title

• H10K30/50 Primary

  Photovoltaic [PV] devices · CPC title

• H10K30/81

  Electrodes · CPC title

• H10K71/12

  using liquid deposition, e.g. spin coating · CPC title

• H10K2102/103

  comprising indium oxides, e.g. ITO · CPC title