Bulk acoustic wave resonator

Patent metadata

Field	Value
Publication number	US-11870419-B2
Application number	US-202117222018-A
Country	US
Kind code	B2
Filing date	Apr 5, 2021
Priority date	Oct 13, 2020
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

A bulk acoustic wave resonator includes a substrate, a first electrode, wherein a cavity is formed between the substrate and the first electrode, a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode, a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer, a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode, and a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween. Any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and an inner end of the lower frame and an end of the protruding portion are spaced apart horizontally.

First claim

What is claimed is:

1. A bulk acoustic wave resonator comprising:
a substrate;
a first electrode, wherein a cavity is formed between the substrate and the first electrode;
a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode;
a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer;
a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode; and
a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween,
wherein any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and
wherein an inner end of the lower frame and an end of the protruding portion are spaced apart in a horizontal direction.

2. The bulk acoustic wave resonator of claim 1 , wherein at least a portion of the extended portion overlaps the lower frame.

3. The bulk acoustic wave resonator of claim 1 , wherein the lower frame is formed of the same material as the first electrode.

4. The bulk acoustic wave resonator of claim 1 , wherein the lower frame is disposed under the first electrode and formed of a different material from the first electrode.

5. The bulk acoustic wave resonator of claim 4 , wherein the lower frame is formed of an insulating material having a density lower than that of the first electrode.

6. The bulk acoustic wave resonator of claim 1 , wherein the passivation layer includes the protruding portion and the extended portion, and the passivation layer is formed of an insulating material having a density lower than that of the first electrode.

7. The bulk acoustic wave resonator of claim 1 , further comprising an additional layer disposed between the lower frame and the first electrode.

8. The bulk acoustic wave resonator of claim 1 , wherein the second electrode includes a frame portion having at least a portion overlapping the lower frame and having a thickness greater than the first thickness.

9. The bulk acoustic wave resonator of claim 8 , wherein an inner end of the frame portion and the inner end of the lower frame are spaced apart in the horizontal direction.

10. The bulk acoustic wave resonator of claim 9 , further comprising an additional layer disposed between the lower frame and the first electrode.

11. The bulk acoustic wave resonator of claim 9 , wherein the lower frame is disposed under the first electrode and formed of a different material from the first electrode.

12. The bulk acoustic wave resonator of claim 11 , wherein the lower frame is formed of an insulating material having a density lower than that of the first electrode.

13. The bulk acoustic wave resonator of claim 9 , wherein the passivation layer includes the protruding portion and the extended portion, and the passivation layer is formed of an insulating material having a density lower than that of the first electrode.

14. The bulk acoustic wave resonator of claim 1 , further comprising an etching preventing layer disposed to surround the cavity.

15. The bulk acoustic wave resonator of claim 14 , further comprising a sacrificial layer disposed outside of the etching preventing layer.

16. The bulk acoustic wave resonator of claim 14 , further comprising an insertion layer disposed between the first electrode and the piezoelectric layer.

17. A bulk acoustic wave resonator comprising:
a substrate;
a first electrode, wherein a cavity is disposed between the substrate and the first electrode;
a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode;
a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer;
a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode; and
a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween,
wherein any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and
wherein an active region in which the protruding portion, the piezoelectric layer, and the first electrode all overlap, a first region disposed between an end of the active region and an inner end of the lower frame, and a second region disposed outside of the first region and in which the extended portion and the lower frame overlap, are continuously disposed.

18. The bulk acoustic wave resonator of claim 17 , wherein frequencies f0, f1, and f2 in the active region, the first region, and the second region have a relationship of f2<f0<f1.

19. The bulk acoustic wave resonator of claim 18 , wherein when lateral wave numbers in the active region, the first region, and the second region are β0, β1, and β2, β0 has 0, β1 has a real number value, and β2 has an imaginary number value in a resonance frequency.

20. The bulk acoustic wave resonator of claim 18 , wherein when acoustic impedances in the active region, the first region, and the second region are z0, z1, and z2, a value of z2 is greater than a value of z0.

21. A bulk acoustic wave resonator comprising:
a substrate;
a first electrode disposed on and spaced apart from the substrate by a cavity;
a piezoelectric layer disposed on the first electrode;
a second electrode disposed on the piezoelectric layer;
an upper layer of the bulk acoustic wave resonator disposed on the second electrode; and
a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween,
wherein the upper layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and
wherein an inner end of the lower frame and an end of the protruding portion are spaced apart in a horizontal direction.

22. The bulk acoustic wave resonator of claim 21 , wherein the upper layer comprises an upper portion of the second electrode or a passivation layer disposed on the second electrode.

Assignees

• Samsung Electro Mech

Inventors

• Han Won
• Son Sang Uk
• Kim Tae Yoon
• Lim Chang Hyun
• Han Sang Heon
• Kim Jong Beom

Classifications

• H03H9/173 Primary

  Air-gaps · CPC title

• H03H9/02157 Primary

  Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness · CPC title

• H03H9/02086 Primary

  Means for compensation or elimination of undesirable effects · CPC title

• H03H9/02118

  of lateral leakage between adjacent resonators · CPC title

• H03H9/178

  of a laminated structure of multiple piezoelectric layers with inner electrodes · CPC title