Laser diode and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-11870219-B2
Application number	US-202117227534-A
Country	US
Kind code	B2
Filing date	Apr 12, 2021
Priority date	Jun 9, 2020
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

First claim

What is claimed is:

1. A laser diode, comprising:
a substrate having a first surface and a second surface that are opposite to each other;
an epitaxial structure that is disposed on said first surface of said substrate and that is formed with a ridge structure on a side of said epitaxial structure opposite to said substrate;
an electrode contacting layer disposed on a top surface of said ridge structure; and
an optical cladding layer having a refractive index smaller than that of said electrode contacting layer, and including a first cladding portion which covers side walls of said ridge structure, and a second cladding portion which is disposed on a portion of said top surface of said ridge structure,
wherein said optical cladding layer and said electrode contacting layer have a total thickness that is an odd multiple of λ/4n, in which λ is a wavelength of a light emitted by said laser diode, and n is an integer not smaller than 1.

2. The laser diode of claim 1 , further including a first electrode that is electrically connected to said epitaxial structure, and a second electrode that is formed on said optical cladding layer and that is electrically connected to said electrode contacting layer.

3. The laser diode of claim 2 , wherein said second cladding portion of said optical cladding layer is disposed between said electrode contacting layer and said second electrode, and a portion of said electrode contacting layer is exposed from said second cladding portion.

4. The laser diode of claim 1 , wherein said first cladding portion further covers side walls of said electrode contacting layer, and said second cladding portion includes an edge section which is connected to said first cladding portion, and a middle section which is spaced apart from and surrounded by said edge section.

5. The laser diode of claim 4 , wherein said middle section is configured as a plurality of island structures that are spaced apart from each other.

6. The laser diode of claim 5 , wherein two immediately adjacent ones of said island structures are spaced apart by a distance that decreases along a direction from a light exit side toward a light reflective side of the laser diode.

7. The laser diode of claim 5 , wherein said electrode contacting layer is formed with a plurality of through holes to expose said top surface of said ridge structure, and said island structures are filled in said through holes.

8. The laser diode of claim 5 , wherein said island structures are disposed on said electrode contacting layer.

9. The laser diode of claim 1 , wherein a projection of said second cladding portion on said ridge structure accounts for not lower than 10% of an area of said top surface of said ridge structure.

10. The laser diode of claim 9 , wherein the projection of said second cladding portion on said ridge structure accounts for 20% to 80% of said area of said top surface of said ridge structure.

11. The laser diode of claim 1 , wherein the refractive index of said optical cladding layer ranges from 1.3 to 1.9.

12. The laser diode of claim 1 , wherein a difference between the refractive index of said optical cladding layer and that of said electrode contacting layer is not less than 0.2.

13. The laser diode of claim 1 , wherein the refractive index of said electrode contacting layer is smaller than that of said epitaxial structure.

14. The laser diode of claim 1 , wherein said optical cladding layer is made of a material selected from the group consisting of SiO 2 , Al 2 O 3 , MgF, CaF, MgO, AlN, SiNO, and combinations thereof.

15. A laser diode, comprising:
a substrate having a first surface and a second surface that are opposite to each other;
an epitaxial structure that is disposed on said first surface of said substrate and that is formed with a ridge structure on a side of said epitaxial structure opposite to said substrate;
an electrode contacting layer disposed on a top surface of said ridge structure, and formed with a plurality of through holes to expose said top surface of said ridge structure; and
an optical cladding layer having a refractive index smaller than that of said electrode contacting layer, and including a first cladding portion which covers side walls of said ridge structure and side walls of said electrode contacting layer, and a second cladding portion which is disposed on a portion of said top surface of said ridge structure and which includes an edge section connected to said first cladding portion and a middle section spaced apart from and surrounded by said edge section, said middle section being configured as a plurality of island structures that are spaced apart from each other and that are filled in said through holes.

16. The laser diode of claim 15 , further including a first electrode that is electrically connected to said epitaxial structure, and a second electrode that is formed on said optical cladding layer and that is electrically connected to said electrode contacting layer.

17. The laser diode of claim 15 , wherein two immediately adjacent ones of said island structures are spaced apart by a distance that decreases along a direction from a light exit side toward a light reflective side of the laser diode.

18. The laser diode of claim 15 , wherein a projection of said second cladding portion on said ridge structure accounts for not lower than 10% of an area of said top surface of said ridge structure.

19. The laser diode of claim 18 , wherein the projection of said second cladding portion on said ridge structure accounts for 20% to 80% of said area of said top surface of said ridge structure.

20. The laser diode of claim 15 , wherein the refractive index of said optical cladding layer ranges from 1.3 to 1.9.

21. The laser diode of claim 15 , wherein a difference between the refractive index of said optical cladding layer and that of said electrode contacting layer is not less than 0.2.

22. The laser diode of claim 15 , wherein the refractive index of said electrode contacting layer is smaller than that of said epitaxial structure.

23. The laser diode of claim 15 , wherein said optical cladding layer is made of a material selected from the group consisting of SiO 2 , Al 2 O 3 , MgF, CaF, MgO, AlN, SiNO, and combinations thereof.

Assignees

• Xiamen Sanan Optoelectronics Technology Co Ltd
• Quanzhou Sanan Semiconductor Tech Co Ltd

Inventors

• Zhong Zhibai
• Ye Tao
• Zhang Min
• Huang Shao-Hua
• Li Shuiqing

Classifications

• H01S5/222 Primary

  having a refractive index lower than that of the cladding layers or outer guiding layers · CPC title

• H01S5/04256

  characterised by the configuration · CPC title

• H01S5/3211

  characterised by special cladding layers, e.g. details on band-discontinuities · CPC title

• H01S5/168

  with window regions comprising current blocking layers · CPC title

• H01S5/028 Primary

  Coatings {; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers} · CPC title