Metal oxide nanoparticles surface-treated with metal ion, quantum dot-light-emitting device comprising the same and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-11870004-B2
Application number	US-202016817162-A
Country	US
Kind code	B2
Filing date	Mar 12, 2020
Priority date	Apr 8, 2019
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

The metal oxide nanoparticle includes a Zn-containing metal Me 1 oxide nanoparticle of Zn 1-x Me 1 x O (0≤x≤0.5) composition, and a metal Me 2 ion surface treatment layer formed on a surface of the nanoparticle. Here, the metal Me 1 is any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba and a combination thereof, and the metal Me 2 is any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba and a combination thereof.

First claim

What is claimed is:

1. A metal oxide nanoparticle, comprising:
a Zn containing metal Me 1 oxide nanoparticle of Zn 1-x Me 1 O (0≤x≤0.5) composition; and
a metal Me 2 ion surface treatment layer formed on a surface of the Zn containing metal Me 1 oxide nanoparticle,
wherein Me 1 is any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba, or a combination thereof,
wherein Me 2 is any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba, or a combination thereof,
wherein the metal Me 2 ion surface treatment layer comprises a layer formed by reaction of a metal Me 2 ion with a dangling bond on the surface of the Zn containing metal Me 1 oxide nanoparticle, and
wherein the metal oxide nanoparticle comprising the Zn containing metal Me 1 oxide nanoparticle and the metal Me 2 ion surface treatment layer has an electron mobility lower than that of a metal oxide nanoparticle that contains the Zn containing metal Me 1 oxide nanoparticle without the metal Me 2 ion surface treatment layer.

2. The metal oxide nanoparticle according to claim 1 , wherein the metal Me 2 ion surface treatment layer includes Me 2 -OH.

3. The metal oxide nanoparticle according to claim 1 , wherein the metal Me 2 ion surface treatment layer is Me 2 (OH) 2 .

4. A quantum dot light-emitting device, comprising:
a hole transport layer, a quantum dot emitting layer and an electron transport layer,
wherein the electron transport layer comprises a metal oxide nanoparticle comprising:
a Zn containing metal Me 1 oxide nanoparticle of Zn 1-x Me 1 O (0≤x≤0.5) composition;
and a metal Me 2 ion surface treatment layer formed on a surface of the nanoparticle,
wherein Me 1 is any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba, or a combination thereof,

and wherein Me 2 is any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba, or a combination thereof.

5. The quantum dot light-emitting device according to claim 4 , further comprising:
an anode, a hole injection layer and a cathode,
wherein the hole transport layer and the hole injection layer are any one selected from poly(ethylenedioxythiophene):polystyrene sulphonate (PEDOT:PSS), poly[(9, 9-dioctyl-fluorenyl-2, 7-diyl)-co-(4, 4′-(N-(p-butylphenyl))diphenylamine)] (TFB), poly(9-vinylcarbazole) (PVK), N, N, N, N′, N′-tetrakis(4-methoxyphenyl)-benzidine (TPD), poly-TPD, 4, 4′, 4″-tris(N-carbazolyl)-triphenylamine (TCTA), N, N′-bis(naphthalen-1-yl)-N, N′bis(phenyl)-9, 9-spiro-bifluorene (spiro-NPB), dipyrazino[2, 3-f:2′, 3′-h]quinoxaline-2, 3, 6, 7, 10, 11-hexacarbonitrile (HATCN), 1, 1-bis[(di-4-tolylamino)phenylcyclohexane (TAPC), p-type metal oxide and a combination thereof.

6. The quantum dot light-emitting device according to claim 4 , wherein the quantum dot emitting layer comprises Group II-VI, I-III-VI or III-V nano semiconductor compound.

7. The quantum dot light-emitting device according to claim 4 , wherein the metal oxide nanoparticle comprises:
a Zn containing Mg oxide nanoparticle of Zn 1-x Mg x O (0≤x≤0.5) composition;
and a Mg ion surface treatment layer formed on a surface of the nanoparticle.

8. The quantum dot light-emitting device according to claim 7 , wherein the Mg ion surface treatment layer includes Mg—OH.

9. The quantum dot light-emitting device according to claim 7 , wherein the Mg ion surface treatment layer is Mg(OH) 2 .

10. A method for fabricating the metal oxide nanoparticle of claim 1 , comprising:
forming the Zn containing metal Me 1 oxide nanoparticle of Zn 1-x Me 1 x O (0≤x≤0.5) composition; and
forming the metal Me 2 ion surface treatment layer by metal Me 2 ion surface treatment on a surface of the Zn containing metal Me 1 oxide nanoparticle.

11. The method for fabricating a metal oxide nanoparticle according to claim 10 , further comprising providing the Zn containing metal Me 1 oxide nanoparticle in a solution, and wherein forming the metal Me 2 ion surface treatment layer comprises injecting a precursor of Me 2 into the solution to cause reaction.

12. The method for fabricating a metal oxide nanoparticle according to claim 11 , wherein the precursor of Me 2 is a metal salt material or a metal alkoxide material including Me 2 .

13. The method for fabricating a metal oxide nanoparticle according to claim 10 , wherein forming the Zn containing metal Me 1 oxide nanoparticle comprises adding a transparent solution including tetramethylammoniumhydroxide (TMAH) and ethanol to a solution of cation in dimethyl sulfoxide (DMSO) including Zn acetate dehydrate and Mg acetate tetrahydrate to cause reaction, and
wherein forming the metal Me 2 ion surface treatment layer by metal Me 2 ion surface treatment on the surface of the Zn containing metal Me 1 oxide nanoparticle comprises additionally injecting Mg acetate tetrahydrate into the cationic solution to cause further reaction.

14. The method for fabricating a metal oxide nanoparticle according to claim 10 , wherein the metal Me 2 ion surface treatment layer includes Me 2 -OH.

15. The method for fabricating a metal oxide nanoparticle according to claim 10 , wherein the metal Me 2 ion surface treatment layer comprises Me 2 (OH) 2 .

16. The method for fabricating a metal oxide nanoparticle according to claim 10 , wherein the metal oxide nanoparticle comprising the Zn containing metal Me 1 oxide nanoparticle and the metal Me 2 ion surface treatment layer has an electron mobility lower than that of a metal oxide nanoparticle comprising the Zn containing metal Me 1 oxide nanoparticle without the metal Me 2 ion surface treatment layer.

17. The metal oxide nanoparticle according to claim 1 , wherein Me 1 is a metal the same as Me 2 , and wherein a concentration of the metal in the metal Me 2 ion surface treatment layer is higher than that in the Zn containing metal Me 1 oxide nanoparticle.

Assignees

• Hongik Univ Industry Academia Cooperation Foundation

Inventors

• Yang Hee-Sun
• Han Chang-Yeol

Classifications

• H10W90/00

  Package configurations · CPC title

• H10H20/036

  of packages · CPC title

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/80

  Constructional details · CPC title

• H10H20/013

  having light-emitting regions comprising only Group III-V materials · CPC title