Dielectric composition and multilayer electronic component including the same

Patent metadata

Field	Value
Publication number	US-11869720-B2
Application number	US-202217675346-A
Country	US
Kind code	B2
Filing date	Feb 18, 2022
Priority date	Sep 20, 2019
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

A dielectric composition includes one of BaTiO3, (Ba,Ca)(Ti,Ca)O3, (Ba,Ca)(Ti,Zr)O3, Ba(Ti,Zr)O3 and (Ba,Ca)(Ti,Sn)O3, as a main component, a first subcomponent including a rare earth element, and a second subcomponent including at least one of a variable valence acceptor element and a fixed valence acceptor element. When a sum of contents of the rare earth element is defined as DT and a sum of contents of the variable valence acceptor element and the fixed valence acceptor element is defined as AT, (DT/AT)/(Ba+Ca) satisfies more than 0.5 and less than 6.0. In addition, a multilayer electronic component including the dielectric composition is provided.

First claim

What is claimed is:

1. A multilayer electronic component comprising:
a body including a dielectric layer and an internal electrode; and
an external electrode disposed on the body and connected to the internal electrode,
wherein the dielectric layer includes a dielectric composition,
wherein the dielectric composition includes:
one of BaTiO 3 , (Ba,Ca)(Ti,Ca)O 3 , (Ba,Ca)(Ti,Zr)O 3 , Ba(Ti,Zr)O 3 or (Ba,Ca)(Ti,Sn)O 3 , as a main component;
a first subcomponent comprising a rare earth element; and
a second subcomponent comprising at least one of a variable valence acceptor element or a fixed valence acceptor element,
wherein the dielectric layer comprises a plurality of crystal grains,
wherein one or more of the plurality of crystal grains have a core-shell structure, and
when a sum of contents of the rare earth element is defined as DT, and a sum of contents of the variable valence acceptor element and the fixed valence acceptor element is defined as AT, (DT/AT)/(Ba+Ca) satisfies more than 0.5 and less than 6.0.

2. The multilayer electronic component of claim 1 , wherein the rare earth element comprises lanthanum (La), and further comprises at least one of yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium (Lu), and
a content ratio (La/DT) of the lanthanum (La) to a sum (DT) of the contents of the rare earth element satisfies 0.1 or more and less than 1.0.

3. The multilayer electronic component of claim 1 , wherein the first subcomponent comprises an oxide or carbonate containing the rare earth element in a range from 0.2 mol to 4.0 mol relative to 100 mol of the main component.

4. The multilayer electronic component of claim 1 , wherein the variable valence acceptor element comprises at least one of Mn, V, Cr, Fe, Ni, Co, Cu or Zn, and
the fixed valence acceptor element comprises at least one of Mg or Zr.

5. The multilayer electronic component of claim 1 , wherein the second subcomponent comprises an oxide or carbonate containing at least one of a variable valence acceptor element or a fixed valence acceptor element in a range from 0.01 mol to 4.0 mol relative to 100 mol of the main component.

6. The multilayer electronic component of claim 1 , wherein the dielectric composition comprises a third subcomponent, which is an oxide or carbonate comprising Ba,
wherein the third subcomponent is included in an amount in a range from 0.37 mol to 4.0 mol with respect to 100 mol of the main component.

7. The multilayer electronic component of claim 1 , wherein the dielectric composition comprises a fourth subcomponent which is at least one of an oxide comprising at least one of Si or Al or a glass compound comprising Si,
wherein the fourth subcomponent is contained in a range from 0.5 mol to 7.0 mol with respect to 100 mol of the main component.

8. The multilayer electronic component of claim 1 ,
wherein the plurality of crystal grains have an average grain size in a range from 50 nm to 500 nm.

9. The multilayer electronic component of claim 1 , wherein the dielectric layer has an average thickness of 0.41 μm or less.

10. A multilayer electronic component comprising:
a body including a dielectric layer and an internal electrode; and
an external electrode disposed on the body and connected to the internal electrode,
wherein the dielectric layer includes a dielectric composition,
wherein the dielectric composition includes:
one of BaTiO 3 , (Ba,Ca)(Ti,Ca)O 3 , (Ba,Ca)(Ti,Zr)O 3 , Ba(Ti,Zr)O 3 or (Ba,Ca)(Ti,Sn)O 3 , as a main component;
a first subcomponent comprising a rare earth element; and
a second subcomponent comprising at least one of a variable valence acceptor element or a fixed valence acceptor element,
wherein the dielectric layer comprises a plurality of crystal grains,
wherein one or more of the plurality of crystal grains have a core-shell structure,
wherein the rare earth element comprises lanthanum (La), and further comprises at least one of yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium (Lu), and
a content ratio (La/DT) of the lanthanum (La) to a sum (DT) of the contents of the rare earth element satisfies 0.1 or more and less than 1.0.

11. The multilayer electronic component of claim 10 , wherein the first subcomponent comprises an oxide or carbonate containing the rare earth element in a range from 0.2 mol to 4.0 mol relative to 100 mol of the main component.

12. The multilayer electronic component of claim 10 , wherein the variable valence acceptor element comprises at least one of Mn, V, Cr, Fe, Ni, Co, Cu or Zn, and
the fixed valence acceptor element comprises at least one of Mg or Zr.

13. The multilayer electronic component of claim 10 , wherein the second subcomponent comprises an oxide or carbonate containing at least one of a variable valence acceptor element or a fixed valence acceptor element in a range from 0.01 mol to 4.0 mol relative to 100 mol of the main component.

14. The multilayer electronic component of claim 10 , wherein the dielectric composition comprises a third subcomponent, which is an oxide or carbonate comprising Ba,
wherein the third subcomponent is included in an amount in a range from 0.37 mol to 4.0 mol with respect to 100 mol of the main component.

15. The multilayer electronic component of claim 10 , wherein the dielectric composition comprises a fourth subcomponent which is at least one of an oxide comprising at least one of Si or Al or a glass compound comprising Si,
wherein the fourth subcomponent is contained in a range from 0.5 mol to 7.0 mol with respect to 100 mol of the main component.

16. The multilayer electronic component of claim 10 , wherein the plurality of crystal grains have an average grain size in a range from 50 nm to 500 nm.

17. The multilayer electronic component of claim 10 , wherein the dielectric layer has an average thickness of 0.41 μm or less.

Assignees

• Samsung Electro Mech

Inventors

• Park Jae Sung
• Kim Hyoung Uk
• Kwon Hyung Soon
• Kim Jong Han
• Kim Jeong Ryeol

Classifications

• H01G4/1209 Primary

  characterised by the ceramic dielectric material (H01G4/1272, H01G4/1281 take precedence) · CPC title

• C04B35/4682 Primary

  based on BaTiO3 perovskite phase · CPC title

• C04B35/6264

  Mixing media, e.g. organic solvents · CPC title

• C04B35/638

  Removal thereof · CPC title

• C04B35/64

  Burning or sintering processes (C04B33/32 takes precedence {; powder metallurgy B22F}) · CPC title