Conducting structure

Patent metadata

Field	Value
Publication number	US-11868576-B2
Application number	US-202218085286-A
Country	US
Kind code	B2
Filing date	Dec 20, 2022
Priority date	Jan 26, 2017
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

A conducting structure is provided and includes a first layer; a first terminal on the first layer; a second layer overlapping the first layer via the first terminal; a second terminal on the second layer; a first hole which penetrates the second layer and the second terminal; an organic insulating layer located between the first terminal and the second layer, and having a second hole connected to the first hole; and a connecting material provided in the first and second holes to electrically connect the first terminal and the second terminal to each other, wherein a diameter of the second hole is greater than a diameter of the first hole.

First claim

What is claimed is:

1. A conducting structure comprising:
a first layer;
a first terminal on the first layer;
a second layer overlapping the first layer via the first terminal;
a second terminal on the second layer;
a first hole which penetrates the second layer and the second terminal;
an organic insulating layer located between the first terminal and the second layer, and having a second hole connected to the first hole; and
a connecting material provided in the first and second holes to electrically connect the first terminal and the second terminal to each other, and
a detection electrode located on the second layer and connected to the second terminal, wherein
a diameter of the second hole is greater than a diameter of the first hole, and
a thickness of the second terminal is greater than a thickness of the detection electrode.

2. The structure of claim 1 , wherein
the second terminal includes an oxide electrode which is in contact with the second layer.

3. The structure of claim 1 , wherein
the second terminal includes a metal layer which is in contact with the second layer and an oxide electrode which is in contact with the metal layer.

4. The structure of claim 1 , further comprising:
a protection material covering the second terminal.

5. The structure of claim 1 , further comprising:
a first interlayer insulating layer located between the first layer and the first terminal, wherein
the first terminal includes a first oxide electrode located on the first interlayer insulating layer.

6. The structure of claim 5 , wherein
the first terminal includes a second oxide electrode located above the first oxide electrode.

7. The structure of claim 6 , further comprising:
a second interlayer insulating layer located between the first oxide electrode and the second oxide electrode.

8. The structure of claim 6 , wherein
the second oxide electrode is in contact with the first oxide electrode.

9. The structure of claim 1 , further comprising:
a third hole which penetrates the first terminal.

10. A conducting structure comprising:
a first layer;
a first terminal on the first layer;
a second layer overlapping the first layer via the first terminal;
a second terminal on the second layer;
a first hole which penetrates the second layer and the second terminal;
an organic insulating layer located between the first terminal and the second layer, and having a second hole connected to the first hole; and
a connecting material provided in the first and second holes to electrically connect the first terminal and the second terminal to each other,
a first interlayer insulating layer located between the first layer and the first terminal, wherein
a diameter of the second hole is greater than a diameter of the first hole,
the first terminal includes a first oxide electrode located on the first interlayer insulating layer,
the first terminal includes a second oxide electrode located above the first oxide electrode.

11. The structure of claim 10 , further comprising:
a second interlayer insulating layer located between the first oxide electrode and the second oxide electrode.

12. The structure of claim 10 , wherein
the second oxide electrode is in contact with the first oxide electrode.

13. The structure of claim 10 , wherein
the second terminal includes an oxide electrode which is in contact with the second layer.

14. The structure of claim 10 , wherein
the second terminal includes a metal layer which is in contact with the second layer and an oxide electrode which is in contact with the metal layer.

15. The structure of claim 10 , further comprising:
a protection material covering the second terminal.

16. The structure of claim 10 , further comprising:
a third hole which penetrates the first terminal.

Assignees

• Japan Display Inc

Inventors

• Osawa Shuichi
• Hinata Shoji
• Imazeki Yoshikatsu
• Kamijo Yoichi
• Watanabe Yoshihiro

Classifications

• G06F3/0446 Primary

  using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes · CPC title

• G02F1/13338

  Input devices, e.g. touch panels · CPC title

• G06F3/044

  by capacitive means · CPC title

• G06F3/0412

  Digitisers structurally integrated in a display · CPC title

• G06F3/0445

  using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer · CPC title