Method for manufacturing of patterned SrB4BO7 and PbB4O7 crystals

US11868022B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11868022-B2
Application numberUS-201917415211-A
CountryUS
Kind codeB2
Filing dateDec 16, 2019
Priority dateDec 18, 2018
Publication dateJan 9, 2024
Grant dateJan 9, 2024

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Abstract

Official abstract text for this publication.

An SrB4O7 or PbB4O7 crystal is configured with a plurality of domains with respective periodically alternating polarity of the crystal axis so that the disclosed crystal is capable of quasi-phasematching (QPM). The disclosed crystal is manufactured by a method including patterning a surface of a crystal block of SrB4O7 or PbB4O7, thereby providing patterned uniformly dimensioned regions with a uniform polarity sign on the surface. The method further includes generating a disturbance on the patterned surface, thereby inverting a sign of crystal polarity of every other region to form the SrB4O7 or SrB4O7 crystal with a plurality of domains with alternating polarity enabling a QPM mechanism.

First claim

Opening claim text (preview).

The invention claimed is: 1. A strontium tetraborate (SrB 4 O 7 ) or lead tetraborate (PbB 4 O 7 ) crystal comprising a plurality of uniform domains with respective periodically alternating polarity of the crystal axis, the uniform domains defining a volume periodic structure of the SrB 4 O 7 or PbB 4 O 7 crystal enabling quasi phase-matching (QPM) use. 2. The SrB 4 O 7 or PbB 4 O 7 crystal of claim 1 , wherein the crystal is configured to be a nonlinear optical element with the QPM used for converting a fundamental frequency to a higher harmonic which is selected from the group consisting of a second harmonic, third harmonic generation, higher harmonic generations and optical parametric interactions. 3. The SrB 4 O 7 or PbB 4 O 7 crystal of claim 1 , wherein a thickness of each domain for a VIS-DUV light range is between 0.2 μm and about 20 μm. 4. The SrB 4 O 7 or PbB 4 O 7 crystal of claim 1 , further having a clear aperture with a diameter which varies from about 1 mm to about 5 cm. 5. The SrB 4 O 7 or PbB 4 O 7 crystal of claim 1 , wherein the uniform domains have parallel walls deviating from one another at less than 1 μm over a 10 mm distance. 6. A method of fabricating a periodic structure in a strontium tetraborate (SrB 4 O 7 ) or lead tetraborate (PbB 4 O 7 ) nonlinear crystal, comprising: patterning a surface of a SrB 4 O 7 or PbB 4 O 7 block, thereby providing a plurality of alternating protected and unprotected uniformly dimensioned regions with a uniform polarity sign of the crystal axis; generating a disturbance on the surface, thereby inverting a sign of crystal polarity of every other region such as to provide the SrB 4 O 7 or PbB 4 O 7 block with a periodic volume structure including a plurality of uniformly dimensioned domains with an alternating polarity of the crystal axis, thereby obtaining the SrB 4 O 7 or PbB 4 O 7 nonlinear crystal enabling quasi phase-matching (QPM). 7. The method of claim 6 , wherein the patterning step includes: metallizing the patterned surface, applying a layer of photoresist atop the metallized surface, applying a mask with a desired period atop the layer of photoresist, thereby providing a plurality of uniformly-dimensioned regions with exposed photoresist and covered photoresist which alternate one another, and removing the photoresist layer and metal off the uniformly-dimensioned regions with exposed photoresist, thereby forming uniformly-dimensioned patterned regions. 8. The method of claim 6 , wherein the step of generating disturbance includes: generating an internal disturbance on the structured surface while utilizing a high temperature melt technique, thereby growing the SrB 4 O 7 or PbB 4 O 7 crystal with a plurality of uniformly-dimensioned domains which have alternating polarity corresponding to the polarity of respective uniformly-dimensioned regions, wherein the high temperature technique is selected from a Czochralski method, Bridgeman, directional recrystallization, or top-seeded solution growth. 9. The method of claim 6 , wherein the step of generating disturbance on the surface includes applying an external force to the protected regions of the patterned surface, thereby flipping the polarity of every other region. 10. The method of claim 9 further comprising utilizing a high temperature melt technique, thereby growing the SrB 4 O 7 or PbB 4 O 7 crystal with a plurality of uniformly-dimensioned domains with alternating polarity corresponding to the polarity of respective uniformly-dimensioned regions, wherein the high temperature technique is selected from a Czochralski method, Bridgeman, directional recrystallization, or top-seeded solution growth. 11. The method of claim 6 , wherein the domains of the volume periodic structure of the SrB 4 O 7 or SrB 4 O 7 nonlinear crystal have respective parallel walls which deviate from one another at less than 1 micron (μm) over a 10 mm distance.

Assignees

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Classifications

  • G02F1/3551Primary

    Crystals · CPC title

  • Complex oxides · CPC title

  • After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title

  • G02F1/354Primary

    Third or higher harmonic generation · CPC title

  • Quasi phase matching [QPM], e.g. using a periodic domain inverted structure · CPC title

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What does patent US11868022B2 cover?
An SrB4O7 or PbB4O7 crystal is configured with a plurality of domains with respective periodically alternating polarity of the crystal axis so that the disclosed crystal is capable of quasi-phasematching (QPM). The disclosed crystal is manufactured by a method including patterning a surface of a crystal block of SrB4O7 or PbB4O7, thereby providing patterned uniformly dimensioned regions with a …
Who is the assignee on this patent?
Ipg Photonics Corp
What technology area does this patent fall under?
Primary CPC classification G02F1/3551. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 09 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).