Scalable and safe nanocrystal precursor

Patent metadata

Field	Value
Publication number	US-11866629-B2
Application number	US-202117147057-A
Country	US
Kind code	B2
Filing date	Jan 12, 2021
Priority date	Jan 13, 2020
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

A semiconductor nanocrystal can be made by an in situ redox reaction between an M donor and an E donor.

First claim

What is claimed is:

1. A method of making a semiconductor nanocrystal comprising:
contacting an M donor including a Group III element in an oxidation state lower than the highest oxidation state of a Group II element or Group III element with an E donor including a Group V element or Group VI element in an oxidation state higher than the oxidation state of the Group V element or Group VI in a product semiconductor material; and
decomposing the M donor in the presence of the E donor,

thereby forming a population of nanocrystal cores including the product semiconductor material
wherein the M donor includes In(I) or a mixture of indium species generating In(I).

2. The method of claim 1 , wherein the E donor includes As(III).

3. The method of claim 1 , wherein the product semiconductor is a III-V, or III-VI semiconductor material, or mixtures thereof.

4. The method of claim 1 , wherein the E donor includes a pnictogen atom in a formal oxidation state of +III surrounded by amino groups.

5. The method of claim 1 , further comprising forming a first overcoating on a surface of the core, the first overcoating including a second semiconductor material.

6. The method of claim 5 , further comprising forming a second overcoating on a surface of the first overcoating, the second overcoating including a third semiconductor material.

7. The method of claim 1 , wherein the nanocrystal is obtained in nearly quantitative yield relative to the E donor or the M donor.

8. The method of claim 1 , wherein the decomposing includes heating.

9. A method of making a semiconductor nanocrystal comprising:
contacting an M donor including a Group III element in an oxidation state lower than the highest oxidation state of a Group II element or Group III element with an E donor including a Group V element or Group VI element in an oxidation state higher than the oxidation state of the Group V element or Group VI in a product semiconductor material; and
decomposing the M donor in the presence of the E donor,

thereby forming a population of nanocrystal cores including the product semiconductor material wherein the M donor includes an In(I) halide.

Assignees

• Massachusetts Inst Technology

Inventors

• Bawendi Moungi
• Franke Daniel
• Ginterseder Matthias

Classifications

• H10D62/118

  Nanostructure semiconductor bodies · CPC title

• C09K11/883 Primary

  with zinc or cadmium · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• C01B17/20

  Methods for preparing sulfides or polysulfides, in general (ammonium sulfides or polysulfides C01C; sulfides or polysulfides of metals, other than alkali metals, magnesium, calcium, strontium and barium, see the relevant groups of subclasses C01F or C01G, according to the metal) · CPC title

• C01B19/04

  Binary compounds {including binary selenium-tellurium compounds (C01B19/004, C01B19/005, C01B19/007 take precedence)} · CPC title