Systems and methods of operation of capacitive radio frequency micro-electromechanical switches

Patent metadata

Field	Value
Publication number	US-11864947-B2
Application number	US-201716471997-A
Country	US
Kind code	B2
Filing date	Dec 21, 2017
Priority date	Dec 22, 2016
Publication date	Jan 9, 2024
Grant date	Jan 9, 2024

Abstract

Disclosed are systems and methods of operation for capacitive radio frequency micro-electromechanical switches, such as CMUT cells for use in an ultrasound system. An RFMEMS may include substrate, a first electrode connected to the substrate, a membrane and a second electrode connected to the membrane. In some examples, there is a dielectric stack between the first electrode and the second electrode and flexible membrane. The dielectric stack design minimizes drift in the membrane collapse voltage. In other examples, one of the electrodes is in the form of a ring, and a third electrode is provided to occupy the space in the center of the ring. Alternatively, the first and second electrodes are both in the form of a ring and there is a support between the electrodes inside the rings.

First claim

The invention claimed is:

1. A capacitive radio frequency micro-electromechanical switch (RFMEMS), comprising:
a substrate;
a first electrode connected to the substrate;
a flexible membrane at least partially spatially separated from the first electrode;
a second electrode connected to the flexible membrane; and
a dielectric stack disposed between the first electrode and the second electrode and flexible membrane, comprising:
a first dielectric layer having a first density of electrically active defects; and
a second dielectric layer having a second density of electrically active defects, lower than the first, wherein the first and second dielectric layers comprise an oxide of the same material.

2. The capacitive RFMEMS as claimed in claim 1 , wherein the first and second dielectric layers comprise silicon dioxide (SiO 2 ).

3. The capacitive RFMEMS as claimed in claim 2 , wherein the first dielectric layer is constructed using atomic layer deposition.

4. The capacitive RFMEMS as claimed in claim 2 , wherein the second dielectric layer is constructed using chemical vapor deposition.

5. The capacitive RFMEMS as claimed in claim 3 , wherein the second dielectric layer has a thickness that is twice a thickness of the first dielectric layer.

6. The capacitive RFMEMS as claimed in claim 1 , wherein the first and second dielectric layers comprise aluminum dioxide (Al 3 O 2 ) or hafnium(IV) oxide (HFO 2 ).

7. The capacitive RFMEMS as claimed in claim 1 , wherein the dielectric stack further comprises:
a third dielectric layer, wherein the third dielectric layer is selected based on the dielectric properties of the first and second dielectric layer.

8. The capacitive RFMEMS as claimed in claim 7 , wherein the first and second dielectric comprise silicon dioxide (SiO 2 ) and the third dielectric layer comprises aluminum dioxide (Al 3 O 2 ).

9. The capacitive RFMEMS as claimed in claim 1 , wherein the capacitive RFMEMS is a capacitive micro-machined ultrasound transducer (CMUT) cell.

10. An ultrasound system comprising:
an ultrasonic probe, wherein the ultrasonic probe comprises an array of CMUT cells each as claimed in claim 9 ;
a voltage supply coupled to the ultrasonic probe, wherein the voltage supply is adapted to:
provide a bias voltage between the first electrode and second electrode of a CMUT cell, wherein the bias voltage is adapted to drive the CMUT cell into a collapse mode; and
provide a stimulus voltage between the first electrode and second electrode of the CMUT cell.

11. The ultrasonic system as claimed in claim 10 , wherein the stimulus voltage is adapted to vibrate the flexible membrane of the CMUT cell at a predetermined frequency.

12. The ultrasonic system as claimed in claim 10 , wherein the second electrode is adapted to detect incoming vibrations.

13. The ultrasonic system as claimed in claim 12 , wherein the system further comprises:
a signal processor adapted to generate data based on the incoming vibrations detected by the second electrode.

14. A method for operating a capacitive radio frequency micro-electromechanical switch (RFMEMS), the capacitive RFMEMS comprising:
a substrate;
a first electrode connected to the substrate;
a flexible membrane at least partially spatially separated from the first electrode;
a second electrode connected to the flexible membrane; and
a dielectric stack disposed between the first electrode and the second electrode and flexible membrane, comprising:
a first dielectric layer having a first level of electrically active defects; and
a second dielectric layer having a second level of electrically active defects, lower than the first,

the method comprising:
providing a bias voltage to the first electrode of the capacitive RFMEMS, thereby creating an electric field between the first and second electrode, wherein the bias voltage is adapted to drive the capacitive RFMEMS into a collapse mode;
providing a stimulus voltage to the second electrode, thereby increasing an electric field between the first and second electrode;
polarizing the first dielectric layer to a first degree of polarization and the second dielectric layer to a second degree of polarization, lower than the first degree, thereby causing a negative drift in the bias voltage between the first and second electrodes; and
orienting space charges within the first dielectric layer to a first level of orientation and within the second dielectric layer to a second level of orientation, greater than the first level, thereby causing a positive drift in the bias voltage between the first and second electrodes, thereby minimizing the overall drift in bias voltage between the first and second electrodes.

15. The method as claimed in claim 14 , wherein the first and second dielectric layers comprise a same material.

16. A capacitive radio frequency micro-electromechanical switch (RFMEMS), comprising:
a substrate;
a first electrode connected to the substrate;
a flexible membrane at least partially spatially separated from the first electrode;
a second electrode connected to the flexible membrane, wherein a bias voltage applied to the first electrode of the capacitive RFMEMS an electric field between the first and second electrode is adapted to drive the capacitive RFMEMS into a collapse mode, and a stimulus voltage applied to the second electrode increases an electric field between the first and second electrode; and
a dielectric stack disposed between the first electrode and the second electrode and flexible membrane, comprising: a first dielectric layer; and a second dielectric layer, the first dielectric layer being polarized to a first degree of polarization and the second dielectric layer to a second degree of polarization, lower than the first degree, causing a negative drift in the bias voltage between the first and second electrodes, wherein: space charges are oriented within the first dielectric layer to a first level of orientation and within the second dielectric layer to a second level of orientation, which is greater than the first level, thereby causing a positive drift in the bias voltage between the first and second electrodes; and an overall drift in bias voltage is reduced between the first and second electrodes.

17. The capacitive RFMEMS as claimed in claim 16 , wherein the first and second dielectric layers comprise a same material.

18. An ultrasound system comprising:
an ultrasonic probe, wherein the ultrasonic probe comprises an array of CMUT cells each as claimed in claim 9 ;
a voltage supply coupled to the ultrasonic probe, wherein the voltage supply is adapted to: provide a bias voltage between the first electrode and second electrode of a CMUT cell, wherein the bias voltage is adapted to drive the CMUT cell into a collapse mode; and provide a stimulus voltage between the first electrode and second electrode of the CMUT cell.

19. The ultrasonic system as claimed in claim 18 , wherein the stimulus voltage is adapted to vibrate the flexible membrane of the CMUT cell at a predetermined frequency.

20. The ultrasonic system as claimed in claim 18 , wherein the second electrode is adapted to detect incoming vibrations.

21. The ultrasonic system as claimed in claim 20 , wherein the system further comprises:
a signal processor adapted to generate data based on the incoming vibrations detected by the second electrode.

Assignees

• Koninklijke Philips Nv

Inventors

• Loebl Hans-Peter
• Shulepov Sergei

Classifications

• A61B8/4494 Primary

  characterised by the arrangement of the transducer elements · CPC title

• A61B8/5207

  involving processing of raw data to produce diagnostic data, e.g. for generating an image · CPC title

• G01N29/0654

  Imaging · CPC title

• G01N29/2406

  Electrostatic or capacitive probes, e.g. electret or cMUT-probes · CPC title

• G01N29/348

  with frequency characteristics, e.g. single frequency signals, chirp signals (measuring frequency of mechanical vibrations or acoustic waves in general G01H1/06, G01H3/04; measuring frequency or analysing frequency spectra G01R23/00) · CPC title