Wafer cleaning apparatus, method for cleaning wafer and method for fabricating semiconductor device

Patent metadata

Field	Value
Publication number	US-11862457-B2
Application number	US-202318098330-A
Country	US
Kind code	B2
Filing date	Jan 18, 2023
Priority date	Feb 16, 2021
Publication date	Jan 2, 2024
Grant date	Jan 2, 2024

Abstract

A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

First claim

What is claimed is:

1. A method of fabricating a semiconductor device, the method comprising:
disposing a wafer on a rotatable chuck;
irradiating a lower surface of the wafer with a laser to heat the wafer; and
supplying a chemical to an upper surface of the wafer to clean the wafer,
wherein the laser penetrates an optical system including an aspheric lens array,
wherein the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window,
wherein the first coating layer and the second coating layer have different light transmissivities from each other,
wherein the first coating layer surrounds the second coating layer, and
wherein a first light transmissivity of the first coating layer is smaller than a second light transmissivity of the second coating layer.

2. The method of fabricating the semiconductor device of claim 1 , wherein the wafer includes an exposed portion and a non-exposed portion, and
one of the exposed portion and the non-exposed portion is removed by the chemical.

3. The method of fabricating the semiconductor device of claim 1 , wherein cleaning of the wafer is performed by a puddle method which uses a surface tension of the chemical.

4. The method of fabricating the semiconductor device of claim 1 , wherein the calibration window further includes a second window structure,
the laser is sequentially transmitted through the first and second window structures, and
the second window structure includes a second light projection window including a third and a fourth regions, a third coating layer covering the third region, and a fourth coating layer covering the fourth region.

5. The method of fabricating the semiconductor device of claim 4 , wherein an area of the first coating layer of the first window structure is different from an area of the third coating layer of the second window structure.

6. The method of fabricating the semiconductor device of claim 1 , wherein the first light transmissivity is 80% to 95%, and the second light transmissivity is 95% to 99.9%.

7. The method of fabricating the semiconductor device of claim 1 , wherein the first coating layer has an annular shape, and the second coating layer has a circular shape,
a diameter of the second coating layer is 250 mm to 330 mm, and
a diameter of the first coating layer is greater than the diameter of the second coating layer and is 400 mm or less.

8. The method of fabricating the semiconductor device of claim 4 , wherein the first coating layer is formed on a surface of the first region of the first light projection window, the second coating layer is formed on a surface of the second region of the first light projection window, the third coating layer is formed on a surface of the third region of the second light projection window, and the fourth coating layer is formed on a surface of the fourth region of the second light projection window.

9. The method of fabricating the semiconductor device of claim 8 , wherein the first light projection window is formed of a glass and the second light projection window is formed of a glass.

10. A method of fabricating a semiconductor device, the method comprising:
disposing a wafer on a chuck;
irradiating a lower surface of the wafer with a laser to heat the wafer; and
supplying a chemical to an upper surface of the wafer to clean the wafer,
wherein the laser penetrates an optical system including a lens array,
wherein the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window,
wherein the first coating layer and the second coating layer have different light transmissivities from each other, and
wherein the laser is transmitted through the first coating layer to have a lower intensity at the chuck as compared to an intensity of the laser at the chuck that is transmitted through the second coating layer.

11. The method of claim 10 , wherein the first coating layer is formed on a bottom surface of the first region of the first light projection window and the second coating layer is formed on a bottom surface of the second region of the first light projection window.

12. The method of claim 11 , wherein the first light projection window is formed of a glass.

13. A method of fabricating a semiconductor device, the method comprising:
disposing a wafer on a chuck;
irradiating a lower surface of the wafer with a laser to heat the wafer; and
supplying a chemical to an upper surface of the wafer to clean the wafer,
wherein the laser penetrates an optical system including a lens array,
wherein the laser penetrates a calibration window which includes a light projection window including a lower surface, a first coating layer having a first light transmissivity on the lower surface of the light projection window, and a second coating layer having a second light transmissivity greater than the first light transmissivity on the lower surface of the light projection window, and
wherein the second coating layer includes first to third sub-coating layers which are sequentially stacked on the lower surface of the light projection window, and refractive indexes of the first to third sub-coating layers decreases in a direction receding from the lower surface of the light projection window.

14. The method of claim 13 , wherein the first coating layer surrounds the second coating layer.

15. The method of claim 13 , wherein the light projection window is formed of a glass.

Assignees

• Samsung Electronics Co Ltd

Inventors

• CHO Seongkeun
• Kim Young Hoo
• Shin Seung Min
• Earmme Tae Min
• Lee Kun Tack
• Jang Hun Jae
• Jeang Eun Hee

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title