System and methods using an inline surface engineering source

Patent metadata

Field	Value
Publication number	US-11862433-B2
Application number	US-202117347048-A
Country	US
Kind code	B2
Filing date	Jun 14, 2021
Priority date	Jun 22, 2018
Publication date	Jan 2, 2024
Grant date	Jan 2, 2024

Abstract

A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

First claim

What is claimed is:

1. A method of etching a workpiece, comprising:
creating a plasma within an auxiliary plasma source using a gas comprising an etching species, wherein the auxiliary plasma source is located proximate the workpiece, and wherein ions and radicals from the plasma exit the auxiliary plasma source toward a portion of the workpiece and form a film on the portion of the workpiece; and
using an ion beam created using an ion source, different from the auxiliary plasma source, to provide energy to etch the workpiece, wherein the auxiliary plasma source and the ion source are operated concurrently such that the ion beam is directed toward the workpiece while the auxiliary plasma source is generating the ions and radicals.

2. The method of claim 1 , wherein the etching species comprises a halogen.

3. The method of claim 1 , wherein the etching species comprises CF 4 and oxygen.

4. The method of claim 1 , wherein the etching species comprises hydrogen and a native oxide layer is etched.

5. The method of claim 1 , wherein the ion beam comprises an inert gas.

6. The method of claim 1 , wherein the ion beam is directed to the portion of the workpiece while the film is being created.

7. The method of claim 1 , wherein the ion beam is directed to the portion of the workpiece after the film has been created.

Assignees

• Varian Semiconductor Equipment Ass Inc
• Varlan Semiconductor Equipment Ass Inc

Inventors

• Hatem Christopher
• Kurunczi Peter F
• Rowland Christopher A
• Olson Joseph C
• Renau Anthony

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• H01J37/32422 Primary

  Arrangement for selecting ions or species in the plasma · CPC title