Thermal sensor and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-11856855-B2
Application number	US-202016997953-A
Country	US
Kind code	B2
Filing date	Aug 20, 2020
Priority date	Dec 24, 2019
Publication date	Dec 26, 2023
Grant date	Dec 26, 2023

Abstract

Provided are a thermal sensor and a manufacturing method thereof. The thermal sensor includes a transistor and a thermal sensing device. The thermal sensing device is disposed in a recess in a substrate and electrically connected to the transistor. The thermal sensing device includes a first dielectric layer, a metal silicide reflective layer, a second dielectric layer, and a thermal absorbing layer. The first dielectric layer is disposed on sidewalls and a bottom of the recess. The metal silicide reflective layer is disposed on the first dielectric layer located on the bottom of the recess. The second dielectric layer is disposed at a top of the recess. The thermal absorbing layer is disposed on the second dielectric layer.

First claim

What is claimed is:

1. A thermal sensor, comprising:
a transistor disposed on a substrate; and
a thermal sensing device disposed in a recess in the substrate and electrically connected to the transistor,
wherein the thermal sensing device comprises:
a first dielectric layer disposed on sidewalls and a bottom of the recess;
a metal silicide reflective layer disposed on the first dielectric layer located on the bottom of the recess;
a second dielectric layer disposed at a top of the recess; and
a thermal absorbing layer disposed on the second dielectric layer,

wherein the thermal absorbing layer comprises a P-type silicon-doped layer and an N-type silicon-doped layer disposed on the second dielectric layer and connected with each other, and
wherein the metal silicide reflective layer comprises a multilayer structure.

2. The thermal sensor of claim 1 , wherein the transistor is horizontally adjacent to the thermal sensing device.

3. The thermal sensor of claim 1 , wherein the metal silicide reflective layer is further disposed on the first dielectric layer located on the sidewalls of the recess.

4. The thermal sensor of claim 1 , wherein the metal silicide reflective layer is disposed on an entire bottom of the recess.

5. The thermal sensor of claim 1 , wherein the metal silicide reflective layer is disposed on a portion of the bottom of the recess.

6. The thermal sensor of claim 1 , wherein the second dielectric layer is extended outside the recess.

Assignees

• Nuvoton Technology Corp

Inventors

• Chiu In-Shiang
• Chen Kuang-Chu
• Hsiao Peng-Chan
• Liu han-ying

Classifications

• G01J5/0813

  Planar mirrors; Parallel phase plates · CPC title

• H10N10/01 Primary

  Manufacture or treatment · CPC title

• H10N10/17

  characterised by the structure or configuration of the cell or thermocouple forming the device · CPC title

• G01J5/10 Primary

  using electric radiation detectors · CPC title

• G01J5/20 Primary

  using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices · CPC title