Photoelectric conversion element and method of manufacturing photoelectric conversion element

Patent metadata

Field	Value
Publication number	US-11856802-B2
Application number	US-201917057763-A
Country	US
Kind code	B2
Filing date	May 13, 2019
Priority date	May 31, 2018
Publication date	Dec 26, 2023
Grant date	Dec 26, 2023

Abstract

A first photoelectric conversion element according to an embodiment of the present disclosure incudes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode and including a chromophore, fullerene or a fullerene derivative, and a hole-transporting material, in which the chromophore and the fullerene or the fullerene derivative are bonded to each other at least partially via a crosslinking group in the photoelectric conversion layer.

First claim

What is claimed is:

1. A photoelectric conversion element comprising:
a first electrode;
a second electrode disposed to be opposed to the first electrode; and
a photoelectric conversion layer provided between the first electrode and the second electrode, the photoelectric conversion layer including a chromophore, fullerene or a fullerene derivative, and a hole-transporting material,
the chromophore and the fullerene or the fullerene derivative being bonded to each other at least partially via a crosslinking group in the photoelectric conversion layer.

2. The photoelectric conversion element according to claim 1 , wherein the chromophore comprises an organic molecule having absorption in a visible-light region, and includes the crosslinking group.

3. The photoelectric conversion element according to claim 1 , wherein the chromophore has a change within ±10 nm in an absorption peak wavelength before and after the bonding to the fullerene or the fullerene derivative via the crosslinking group.

4. The photoelectric conversion element according to claim 1 , wherein the crosslinking group comprises a conjugated diene.

5. The photoelectric conversion element according to claim 1 , wherein one or two or more molecules of the chromophore are each bonded to one molecule of the fullerene or the fullerene derivative via the crosslinking group.

6. The photoelectric conversion element according to claim 1 , wherein the fullerene or the fullerene derivative comprises C 60 fullerene or C 70 fullerene.

7. The photoelectric conversion element according to claim 5 , wherein the chromophore comprises subphthalocyanine, porphyrin, phthalocyanine, dipyrromethane, azadipyrromethane, dipyridyl, azadipyridyl, coumarin, perylene, perylene diimide, pyrene, naphthalene diimide, quinacridone, xanthene, xanthenoxanthene, phenoxazine, indigo, azo, oxazine, benzodithiophene, naphthodithiophene, anthradithiophene, rubicene, anthracene, tetracene, pentacene, anthraquinone, tetraquinone, pentaquinone, dinaphthothienothiophene, diketopyrrolopyrrole, oligothiophene, cyanine, squalium, croconium, or a derivative thereof.

8. The photoelectric conversion element according to claim 5 , wherein the crosslinking group comprises one of benzene, naphthalene, anthracene, tetracene, pentacene, cyclopentadiene, indene, furan, thiophene, benzofuran, benzothiophene, and 1,3-butadiene.

9. The photoelectric conversion element according to claim 5 , wherein the hole-transporting material has a highest occupied molecular orbital level higher than the fullerene or the fullerene derivative.

10. A photoelectric conversion element comprising:
a first electrode;
a second electrode disposed to be opposed to the first electrode; and
a photoelectric conversion layer provided between the first electrode and the second electrode, the photoelectric conversion layer being formed, as a film, by a chromophore and fullerene or a fullerene derivative by means of a vacuum vapor deposition method, the chromophore and the fullerene or the fullerene derivative being bonded to each other at least partially via a crosslinking group.

11. The photoelectric conversion element according to claim 10 , wherein the chromophore comprises an organic molecule having absorption in a visible-light region, and includes the crosslinking group.

12. The photoelectric conversion element according to claim 10 , wherein the chromophore has a change within ±10 nm in an absorption peak wavelength before and after the bonding to the fullerene or the fullerene derivative via the crosslinking group.

13. The photoelectric conversion element according to claim 10 , wherein the photoelectric conversion layer further includes a hole-transporting material.

14. A method of manufacturing a photoelectric conversion element, the method comprising:
forming a first electrode;
forming, on the first electrode, a photoelectric conversion layer that includes a chromophore, fullerene or a fullerene derivative, and a hole-transporting material, the chromophore and the fullerene or the fullerene derivative being bonded to each other at least partially via a crosslinking group; and
forming a second electrode on the photoelectric conversion layer.

15. The method of manufacturing the photoelectric conversion element according to claim 14 , wherein the formation of the photoelectric conversion layer includes using a vacuum vapor deposition method.

16. The method of manufacturing the photoelectric conversion element according to claim 14 , wherein the bonding between the chromophore and the fullerene or the fullerene derivative via the crosslinking group is performed by heat or light irradiation upon vacuum vapor deposition or by heating or light irradiation after film formation.

17. A method of manufacturing a photoelectric conversion element, the method comprising:
forming a first electrode;
forming, on the first electrode, a photoelectric conversion layer that includes a chromophore and fullerene or a fullerene derivative, the chromophore and the fullerene or the fullerene derivative being bonded to each other at least partially via a crosslinking group; and
forming a second electrode on the photoelectric conversion layer.

18. The method of manufacturing the photoelectric conversion element according to claim 17 , wherein the formation of the photoelectric conversion layer further includes addition of a hole-transporting material.

Assignees

• Sony Corp
• Sony Semiconductor Solutions Corp

Inventors

• Saito Yosuke
• Miyaji Sae
• Kanno Masato
• Ujiie Yasuharu
• Hasegawa Yuta
• Enoki Osamu
• Negishi Yuki

Classifications

• H10K85/322

  comprising boron · CPC title

• H10K30/30

  comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains · CPC title

• H10K39/32 Primary

  Organic image sensors · CPC title

• H10F39/1825 Primary

  Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures · CPC title

• H10F39/199

  Back-illuminated image sensors · CPC title