STT-SOT hybrid magnetoresistive element and manufacture thereof

Patent metadata

Field	Value
Publication number	US-11854589-B2
Application number	US-202117509014-A
Country	US
Kind code	B2
Filing date	Oct 24, 2021
Priority date	Oct 24, 2021
Publication date	Dec 26, 2023
Grant date	Dec 26, 2023

Abstract

A magnetoresistive element comprises a nonmagnetic sidewall-current-channel (SCC) structure provided on a surface of the SOT material layer that exhibits the Spin Hall Effect, which is opposite to a surface of the SOT material layer where the magnetic recording layer is provided, and comprising an insulating medium in a central region of the SCC structure, and a conductive medium being a sidewall of the SCC structure and surrounding the insulating medium, making an electric current crowding inside the SOT material layer and the magnetic recording layer to achieve a spin-orbit torque and a higher spin-polarization degree for an applied electric current.

First claim

The invention claimed is:

1. A magnetoresistive element having a sidewall-current-channel (SCC) structure and being used in a magnetic memory device, comprising:
a magnetic reference layer having a perpendicular magnetic anisotropy and having an invariable magnetization direction;
a tunnel barrier layer provided on the magnetic reference layer;
a magnetic recording layer provided on the tunnel barrier layer and having a perpendicular magnetic anisotropy and a variable magnetization direction;
an SOT material layer provided on the magnetic recording layer, wherein the SOT material layer comprises one or more materials that exhibit the Spin Hall Effect (SHE);
the sidewall-current-channel (SCC) structure provided on the SOT material layer, the SCC structure comprising: an insulating medium disposed at least in a central region of the SCC structure and throughout the SCC structure thickness; and a conductive medium disposed on at least one vertical side of the insulating medium and throughout the SCC structure thickness, forming a vertical sidewall channel that at least partially surrounds the insulating medium;
a protective cap layer provided on the insulating medium; and
a hard mask layer provided on the protective cap layer;
wherein the tunnel barrier layer has a first resistance-area product (RA 1 ), the insulating medium comprises an insulating oxide or nitride material and has a second resistance-area product (RA 2 ), the second resistance-area product (RA 2 ) is higher than the first resistance-area product (RA 1 ), the insulating medium comprises an electrically insulating material, the conductive medium comprises an electrically conductive material that provides electrical connection directly between the SOT material layer and the protective cap layer through the vertical sidewall channel.

2. The magnetoresistive element of claim 1 , wherein said conductive medium further extends along a vertical direction to be vertical sidewalls of said protective cap layer and said hard mask layer.

3. The magnetoresistive element of claim 1 , wherein said conductive medium comprises at least one layer of metal or metal alloy or conductive metal nitride material, preferred to be Ru, Mo, W, Ta, Ti, Cr, V, Hf, Nb, Zr, Fe, Co, Ni, Cu, Pt, Au, Ag, Rh, Ir, Os, Re, B, Al, or alloy thereof, or nitride thereof, and has a wall thickness between 1.5 nm and 5.0 nm.

4. The magnetoresistive element of claim 1 , wherein said insulating medium comprises at least one layer of oxide or nitride, preferred to be selected from the group consisting of MgO, MgAl 2 O 4 , Al 2 O 3 , HfO 2 , ZrO 2 , TiO 2 , SiO 2 , Y 2 O 3 , RuO, OsO, TcO, ReO, BeO, SiN, RuN, OsN, TcN, ReN, NiO, CoO, FeO, FeCoO 2 , NiFeO 2 , CoNiO 2 , MnO, CrO, VO, TiO, ZnO and CdO.

5. The magnetoresistive element of claim 1 , wherein said second resistance-area product (RA 2 ) is at least 5 times said first resistance-area product (RA 1 ).

6. The magnetoresistive element of claim 1 , wherein said SOT material layer comprises a metal or metal alloy comprising one or more of Pt, Pd, Au, Ag and Cu, or comprises a metal or metal alloy comprising one or more of Pt, Pd, Au, Ag and Cu, doped with elements including one or more of Ir, Bi, Ti, S, Ta, W, Hf, Mo, Se, B, Sb, Re, La, C, P, La, As, Sc, O, Ga, Al, Y, In, Ce, Pr, Nd, F, Mn and Sr.

7. The magnetoresistive element of claim 6 , wherein said SOT material layer further comprises a thin layer comprising one or more of Ir, Bi, Ti, S, Ta, W, Hf, Mo, Se, B, Sb, Re, La, C, P, La, As, Sc, O, Ga, Al, Y, In, Ce, Pr, Nd, F, Mn and Sr.

8. The magnetoresistive element of claim 1 , further comprising a performance enhancement layer between said magnetic recording layer and said SOT material layer, wherein said performance enhancement layer comprises at least one layer of Ru, Mg, Mo, W, Ta, Ti, Cr, V, Hf, Nb, Zr, Fe, Co, Ni, Al, Cu, Pt, Au, Ag, Rh, Ir, Os, Re, or alloy thereof, or oxide thereof.

9. The magnetoresistive element of claim 1 , wherein the vertical sidewall channel is exclusively located atop a first edge of the SOT material layer and on a first vertical side of the insulating medium, forming a first segment of an electric current path inside the magnetoresistive element, directly from the protective cap layer to the first edge of SOT material layer, wherein the electric current path inside the magnetoresistive element further comprises: a second segment horizontally from the first edge of the SOT material layer to the rest of the SOT material layer, and a third segment from the SOT material layer to the magnetic recording layer, the tunnel barrier layer, and the magnetic reference layer, sequentially.

10. A method of manufacturing a magnetoresistive element having a sidewall-current-channel (SCC) structure and being used in a magnetic memory device, the method comprising the steps of:
providing a bottom electrode;
depositing an MTJ stack over the bottom electrode, wherein the MTJ stack comprises at least a magnetic reference layer, a tunnel barrier layer provided on a top surface of the magnetic reference layer and a magnetic recording layer provided on a top surface of the tunnel barrier layer;
depositing an SOT material layer over the MTJ stack, the SOT material layer exhibiting the Spin Hall Effect;
depositing an insulating medium layer over the SOT material layer, the insulating medium layer comprising an electrically insulating material;
depositing a protective cap layer over the insulating medium layer;
depositing a hard mask layer over the protective cap layer;
conducting a photolithographic process to form a patterned hard mask having an opening exposed area on the protective cap layer;
first etching the protective cap layer and the insulating medium layer not covered by the patterned hard mask;
forming a conductive encapsulation layer on the top surface of the patterned hard mask, on the top surface of the etched insulating medium layer and on sidewalls of the insulating medium layer, the protective cap layer and the hard mask, wherein the conductive encapsulation layer is made of an electrically conductive material;
second etching away the conductive encapsulation layer on horizontal surfaces, and on a portion of vertical sides of the insulating medium layer, leaving the remaining conductive encapsulation layer being a conductive medium on at least one vertical side of the insulating medium layer, the protective cap layer and the hard mask, wherein the conductive medium forms a vertical sidewall channel electrically connecting the SOT material layer and the protective cap layer;
third etching the SOT material layer and the MTJ stack to form a plurality of MTJ cells; and
forming a dielectric encapsulation layer on the top surface of the patterned hard mask and on sidewalls of the MTJ stack and the conductive encapsulation layer, wherein the dielectric encapsulation layer is made of an electrically insulating material.

11. The method of claim 10 , wherein said conductive medium comprises at least one layer of metal or metal alloy or conductive metal nitride material, preferred to be Ru, Mo, W, Ta, Ti, Cr, V, Hf, Nb, Zr, Fe, Co, Ni, Cu, Pt, Au, Ag, Rh, Ir, Os, Re, B, Al, or alloy thereof, or nitride thereof.

12. The method of claim 10 , wherein said insulating medium layer has a thickness of at least 12 angstroms and comprises at least one layer of oxide or nitride, preferred to be selected from the group consisting of MgO, MgAl 2 O 4 , Al 2 O 3 , HfO 2 , ZrO 2 , TiO 2 , SiO 2 , Y 2 O 3 , RuO, OsO, TcO, ReO, BeO, SiN, RuN, OsN, TcN, ReN, NiO, CoO, FeO, FeCoO 2 , NiFeO 2 , CoNiO 2 , MnO, CrO, VO, TiO, ZnO and CdO.

13. The method of claim 10 , wherein said SOT ma

Assignees

• Guo Yimin
• Xiao Rongfu
• Chen Jun

Inventors

• Guo Yimin
• Xiao Rongfu
• Chen Jun

Classifications

• H10N50/85

  Materials of the active region · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G11B5/3909

  Arrangements using a magnetic tunnel junction · CPC title

• G11C11/1675 Primary

  Writing or programming circuits or methods · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title