Use of polyoxometalate mediators

US11851773B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11851773-B2
Application numberUS-202218086364-A
CountryUS
Kind codeB2
Filing dateDec 21, 2022
Priority dateJan 24, 2018
Publication dateDec 26, 2023
Grant dateDec 26, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

A method is disclosed of manufacturing a semiconductor structure comprising an (001) oriented zincblende structure group III-nitride layer, such as GaN. The layer is formed on a 3C-SiC layer on a silicon substrate. A nucleation layer is formed, recrystallized and then the zincblende structure group III-nitride layer is formed by MOVPE at temperature T3 in the range 750-1000° C., to a thickness of at least 0.5μ. There is also disclosed a corresponding semiconductor structure comprising a zincblende structure group III-nitride layer which, when characterized by XRD, shows that the substantial majority, or all, of the layer is formed of zincblende structure group III-nitride in preference to wurtzite structure group III-nitride. The present invention provides methods for producing hydrogen using a mediator that is capable of reversibly donating and accepting four or more electrons. A method of the invention comprises the steps of reducing a mediator by four or more electrons to yield a reduced mediator, and oxidising a reduced mediator to yield a mediator, and reducing protons to yield hydrogen.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for producing hydrogen, the method comprising the steps of: (i) reducing a mediator by four or more electrons to yield a reduced mediator; (ii) oxidising a reduced mediator to yield a mediator, and reducing protons to yield hydrogen; wherein the reduced mediator of step (i) is used as the reduced mediator of step (ii), or the mediator of step (ii) is used as the mediator of step (i); wherein the mediator in step (i) is (a) reduced by five or more electrons and/or (b) provided in an aqueous electrolyte solution at a concentration of at least 2 mM. 2. The method of claim 1 , wherein the mediator is reduced by six or more electrons, or seven or more electrons. 3. The method of claim 1 , wherein the mediator is reduced by ten or more electrons, or 18 electrons. 4. The method of claim 1 , wherein the mediator is a polyoxometalate. 5. The method of claim 4 , wherein the polyoxometalate has 12 or more, or 18 or more metal atoms. 6. The method of claim 4 , wherein the polyoxometalate is of formula [X 2 M 18 O 62 ] n− , where M is a metal, selected from Mo, W and V, and mixtures thereof, X is selected from P and S and mixtures thereof, and n is 3, 4, 5 or 6 as appropriate. 7. The method of claim 6 , wherein the polyoxometalate is of formula [P 2 W 18 O 62 ] 6− . 8. The method of claim 1 , where step (ii) comprises exposing the mediator to a catalyst. 9. The method of claim 8 , wherein the catalyst is a platinum-containing catalyst. 10. A battery comprising a working electrode and a counter electrode, wherein the working electrode side comprises an electrolyte holding a mediator that may reversibly accept 4 or more electrons, and/or a reduced form of the mediator that may reversibly donate 4 or more electrons, and the counter electrode side comprises: (i) an electrolyte holding a redox active agent in reduced and/or oxidised form; or (ii) an electrolyte holding an oxygen source, and/or holding or exposed to oxygen, and wherein the mediator is (a) reduceable by five or more electrons and/or (b) provided in the electrolyte at a concentration of at least 2 mM. 11. The battery of claim 10 , wherein the mediator is reduceable by six or more electrons, or seven or more electrons. 12. The battery of claim 10 , wherein the mediator is reduceable by ten or more electrons, or 18 electrons. 13. The battery of claim 10 , wherein the mediator is a polyoxometalate. 14. The battery of claim 13 , wherein the polyoxometalate has 16 or more, or 18 or more metal atoms. 15. The battery of claim 14 , wherein the polyoxometalate is of formula [X 2 M 18 O 62 ] n− , where M is a metal, selected from Mo, W and V, and mixtures thereof, X is selected from P and S and mixtures thereof, and n is 3, 4, 5 or 6 as appropriate. 16. The battery of claim 15 , wherein the polyoxometalate is of formula [P 2 W 18 O 62 ] 6− . 17. The battery of claim 10 , which is: (i) a flow battery; (ii) a charged battery wherein the battery contains predominately the reduced form of the mediator; or (iii) a discharged battery wherein the battery contains predominately the mediator. 18. The method of claim 1 , wherein the concentration of the mediator in the aqueous electrolyte solution is at least 5, 10, 20 or 50 mM. 19. The method of claim 1 , wherein the concentration of the mediator in the aqueous electrolyte solution is at most 1,000, 2,000 or 5,000 mM. 20. The method of claim 1 , wherein the mediator in step (i) is (b) provided in an aqueous electrolyte solution, which is an acidic aqueous electrolyte solution, for example at a pH of pH 4 or less. 21. The battery of claim 10 , wherein the mediator is provided in an electrolyte at a concentration of at least 5, 10, 20 or 50 mM. 22. The battery of claim 10 , wherein the mediator is provided in an electrolyte is at a concentration of at most 1,000, 2,000 or 5,000 mM. 23. The battery of claim 10 , wherein the mediator is provided in an acidic aqueous electrolyte solution.

Assignees

Inventors

Classifications

  • C25B1/04Primary

    by electrolysis of water · CPC title

  • by recharging of redox couples containing fluids; Redox flow type batteries · CPC title

  • composed of a half-cell of a fuel-cell type and a half-cell of the secondary-cell type · CPC title

  • Hydrogen production from non-carbon containing sources, e.g. by water electrolysis · CPC title

  • Fuel cells · CPC title

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What does patent US11851773B2 cover?
A method is disclosed of manufacturing a semiconductor structure comprising an (001) oriented zincblende structure group III-nitride layer, such as GaN. The layer is formed on a 3C-SiC layer on a silicon substrate. A nucleation layer is formed, recrystallized and then the zincblende structure group III-nitride layer is formed by MOVPE at temperature T3 in the range 750-1000° C., to a thickness …
Who is the assignee on this patent?
Univ Glasgow Court
What technology area does this patent fall under?
Primary CPC classification C25B1/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 26 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).