Semiconductor device, method and machine of manufacture

Patent metadata

Field	Value
Publication number	US-11851749-B2
Application number	US-202217826809-A
Country	US
Kind code	B2
Filing date	May 27, 2022
Priority date	Sep 27, 2018
Publication date	Dec 26, 2023
Grant date	Dec 26, 2023

Abstract

A semiconductor device is manufactured by modifying an electromagnetic field within a deposition chamber. In embodiments in which the deposition process is a sputtering process, the electromagnetic field may be modified by adjusting a distance between a first coil and a mounting platform. In other embodiments, the electromagnetic field may be adjusted by applying or removing power from additional coils that are also present.

First claim

What is claimed is:

1. A deposition system comprising:
a first deposition chamber;
a target within the first deposition chamber;
a mounting platform within the first deposition chamber;
a first coil within the first deposition chamber;
a first power source connected to the first coil;
a second coil within the first deposition chamber;
a second power source connected to the second coil;
a third coil within the first deposition chamber;
a third power source connected to the third coil, wherein the first power source, the second power source and the third power source are each different; and
a second deposition chamber, the second deposition chamber connected to a second precursor delivery system, the second deposition chamber being an atomic layer deposition chamber.

2. The deposition system of claim 1 , further comprising a first precursor delivery system connected to the first deposition chamber, and a first ion delivery system connected to the first deposition chamber.

3. The deposition system of claim 1 , further comprising a third precursor delivery system connected to the second deposition chamber, the third precursor delivery system being different from the second precursor delivery system.

4. The deposition system of claim 1 , wherein the target comprises tantalum.

5. The deposition system of claim 1 , wherein the first power source is a radio-frequency power source with a first power between about 1 MHz and about 40 MHz.

6. The deposition system of claim 1 , further comprising a direct current power source connected to the target.

7. The deposition system of claim 1 , wherein the target is not within the second deposition chamber.

8. A deposition system comprising:
a deposition chamber;
a target within the deposition chamber;
a first coil within the deposition chamber;
a mounting platform within the deposition chamber;
a first coil location;
a second coil location, the second coil location being different from the first coil location, wherein the first coil is movable between the first coil location and the second coil location;
a second deposition chamber, wherein the second deposition chamber is an atomic layer deposition chamber;
a first atomic layer deposition precursor input to the second deposition chamber; and
a second atomic layer deposition precursor input to the second deposition chamber.

9. The deposition system of claim 8 , further comprising a first motor connected to the first coil.

10. The deposition system of claim 9 , further comprising a first mounting platform location and a second mounting platform location, wherein the mounting platform is movable between the first mounting platform location and the second mounting platform location.

11. The deposition system of claim 10 , further comprising a second motor connected to the mounting platform.

12. The deposition system of claim 8 , further comprising a direct current power source connected to the target.

13. The deposition system of claim 8 , further comprising a radio-frequency power source connected to the target.

14. The deposition system of claim 8 , wherein the first coil and the target comprise a same material.

15. A deposition system comprising:
a first deposition chamber;
a target region within the first deposition chamber;
a mounting platform within the first deposition chamber opposite the target region, a first region located between the target region and the mounting platform;
a first coil surrounding the first region;
a first motor attached to the first coil, wherein the first motor is positioned to adjust a distance between the first coil and the mounting platform;
a nitrogen-containing precursor input to the first deposition chamber;
a first atomic layer deposition precursor input to a second deposition chamber; and
a second atomic layer deposition precursor input to the second deposition chamber.

16. The deposition system of claim 15 , further comprising a target within the target region.

17. The deposition system of claim 16 , wherein the target comprises a first material and the first coil comprises the first material.

18. The deposition system of claim 15 , further comprising a second motor attached to the mounting platform.

19. The deposition system of claim 15 , wherein the target region is not within the second deposition chamber.

20. The deposition system of claim 15 , wherein the first atomic layer deposition precursor input is a tantalum-containing precursor input and the second atomic layer deposition precursor input is a second nitrogen-containing precursor input different from the nitrogen-containing precursor input to the first deposition chamber.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Wang Jen-Chun
• Lee Ya-Lien
• Chi Chih-Chien
• Su Hung-Wen

Classifications

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P14/69393

  the material containing tantalum, e.g. Ta2O5 · CPC title

• H10P14/6329

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title