Porous amorphous silicon, method for producing porous amorphous silicon, and secondary battery
US-2021371288-A1 · Dec 2, 2021 · US
US11851733B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11851733-B2 |
| Application number | US-202217844175-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 20, 2022 |
| Priority date | Jun 22, 2021 |
| Publication date | Dec 26, 2023 |
| Grant date | Dec 26, 2023 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The manufacturing method of a porous silicon material of the present disclosure includes a particle forming step of melting a raw material containing Al as a first element in an amount of 50% by mass or more and Si in an amount of 50% by mass or less to obtain a silicon alloy, a pore forming step of removing the first element from the silicon alloy to obtain a porous material, and a heat treatment step of heating the porous material to diffuse elements other than Si to a surface of the porous material.
Opening claim text (preview).
What is claimed is: 1. A manufacturing method of a porous silicon material, comprising: a particle forming step of making a silicon alloy that contains Al as a first element in an amount of 50% by mass or more and Si in an amount of 50% by mass or less into particles; a pore forming step of removing the first element from the silicon alloy to obtain a porous material; and a heat treatment step of heating the porous material to diffuse elements other than Si to a surface of the porous material. 2. The manufacturing method of a porous silicon material according to claim 1 , wherein in the heat treatment step, the porous material is heated at a temperature in a range of 400° C. or higher and 1,100° C. or lower. 3. The manufacturing method of a porous silicon material according to claim 1 , wherein in the heat treatment step, the first element diffused to the surface is oxidized, and the surface is coated with an oxide containing the first element. 4. The manufacturing method of a porous silicon material according to claim 1 , wherein in the heat treatment step, the porous material is heated in an inert atmosphere in a range of 600° C. or higher or heated in the presence of oxygen in a range of 400° C. or higher. 5. The manufacturing method of a porous silicon material according to claim 1 , wherein in the pore forming step, the first element is selectively removed by an acid or an alkali. 6. The manufacturing method of a porous silicon material according to claim 1 , wherein in the pore forming step, an amount of substances other than Si to be removed is in a range of 85% by mass or more and 100% by mass or less. 7. The manufacturing method of a porous silicon material according to claim 1 , wherein in the pore forming step, the obtained porous silicon material has an average porosity in a range of 50% by volume or more and 95% by volume or less.
Alloys with open or closed pores · CPC title
comprising an after-treatment · CPC title
based on silicides · CPC title
Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries · CPC title
Preparation (chemical coating from the vapour phase C23C16/00) · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.