Solar cell and photovoltaic module

Patent metadata

Field	Value
Publication number	US-11848392-B2
Application number	US-202117529705-A
Country	US
Kind code	B2
Filing date	Nov 18, 2021
Priority date	Oct 18, 2021
Publication date	Dec 19, 2023
Grant date	Dec 19, 2023

Abstract

Provided are a solar cell and a photovoltaic module. The solar cell includes: a silicon substrate; a passivation layer provided on a surface of the silicon substrate; a first electrode conductor at least partially arranged on the passivation layer and including a body portion and protruding portions located on two ends of the body portion; and a second electrode conductor at least partially arranged on the passivation layer and at least partially overlapping with the protruding portions. A length of each of the protruding portions in a width direction of the body portion is greater than a width of the body portion.

First claim

What is claimed is:

1. A solar cell, comprising:
a silicon substrate;
a passivation layer provided on a surface of the silicon substrate;
a plurality of first electrode conductors, spaced apart from each other and contacting the silicon substrate by penetrating the passivation layer; and
a plurality of second electrode conductors, spaced apart from each other,
wherein the plurality of first electrode conductors are connected alternately with the plurality of second electrode conductors on a same side of the solar cell,
wherein each of the plurality of first electrode conductors comprises a body portion, a first protruding portion, and a second protruding portion, wherein the first protruding portion and the second protruding portion are located on two ends of the body portion, wherein a length of each of the first and second protruding portions in a width direction of the body portion is greater than a width of the body portion, wherein each of the first and second protruding portions comprises a first part located on a first side of the body portion and a second part located on a second side of the body portion,
wherein a second electrode conductor of the plurality of second electrode conductors comprises a first portion, a second portion, and a third portion, the first portion is in direct contact with the first part of the first protruding portion of one first electrode conductor of the plurality of first electrode conductors, the second portion is in direct contact with the first part of the second protruding portion of another first electrode conductor of the plurality of first electrode conductors, and the third portion is in direct contact with the passivation layer,
wherein, along the width direction of the body portion, a width of the second electrode conductor is less than a width of each of the first and second protruding portions,
wherein the body portion of each first electrode conductor contacts the silicon substrate by penetrating the passivation layer, and
wherein the plurality of second electrode conductors do not penetrate the passivation layer and are isolated from the silicon substrate.

2. The solar cell according to claim 1 , wherein an overlapping area S1 between a first electrode conductor of the plurality of first electrode conductors and a second electrode conductor of the plurality of second electrode conductors accounts for 5% to 25% of a total area of the first electrode conductor of the plurality of first electrode conductors.

3. The solar cell according to claim 2 , wherein S1 ranges from 0.001 μm 2 to 0.05 μm 2 .

4. The solar cell according to claim 1 , wherein an area S2 of an orthographic projection of the second electrode conductor of the plurality of second electrode conductors on the silicon substrate ranges from 0.05 μm 2 to 0.1 μm 2 .

5. The solar cell according to claim 1 , wherein an area of an orthographic projection of each of the first protruding portion and the second protruding portion on the silicon substrate is S3, an overlapping area between each of the first protruding portion and the second protruding portion and the body portion is S4, and an area of S3 subtracted by S4 ranges from 0.002 μm 2 to 0.1 μm 2 .

6. The solar cell according to claim 1 , wherein an area of an orthographic projection of the body portion on the silicon substrate is S5, and S5 ranges from 0.05 μm 2 to 0.1 μm 2 .

7. The solar cell according to claim 1 , wherein the plurality of first electrode conductors are formed by curing of a firing-through paste, and the plurality of second electrode conductors are formed by curing of a non-firing-through paste.

8. The solar cell according to claim 1 , wherein an orthographic projection of at least one of the first protruding portion and the second protruding portion on the passivation layer has at least one of the following shapes: a circle, an ellipse, a semicircle, a trapezoid or a square.

9. A photovoltaic module, wherein the photovoltaic module comprises at least one solar cell, and one or more of the at least one solar cell comprises:
a silicon substrate;
a passivation layer provided on a surface of the silicon substrate;
a plurality of first electrode conductors, spaced apart from each other and contacting the silicon substrate by penetrating the passivation layer; and
a plurality of second electrode conductors, spaced apart from each other,
wherein the plurality of first electrode conductors are connected alternately with the plurality of second electrode conductors on a same side of the at least one solar cell,
wherein each of the plurality of first electrode conductors comprises a body portion, a first protruding portion, and a second protruding portion, wherein the first protruding portion and the second protruding portion are located on two ends of the body portion, wherein a length of each of the first and second protruding portions in a width direction of the body portion is greater than a width of the body portion, wherein each of the first and second protruding portions comprises a first part located on a first side of the body portion and a second part located on a second side of the body portion,
wherein a second electrode conductor of the plurality of second electrode conductors comprises a first portion, a second portion, and a third portion, the first portion is in direct contact with the first part of the first protruding portion of one first electrode conductor of the plurality of first electrode conductors, the second portion is in direct contact with the first part of the second protruding portion of another first electrode conductor of the plurality of first electrode conductors, and the third portion is in direct contact with the passivation layer,
wherein, along the width direction of the body portion, a width of the second electrode conductor is less than a width of each of the first and second protruding portions,
wherein the body portion of each first electrode conductor contacts the silicon substrate by penetrating the passivation layer, and
wherein the plurality of second electrode conductors do not penetrate the passivation layer and are isolated from the silicon substrate.

10. The photovoltaic module according to claim 9 , wherein an overlapping area S1 between the first electrode conductor of the plurality of first electrode conductors and the second electrode conductor of the plurality of second electrode conductors accounts for 5% to 25% of a total area of the first electrode conductor of the plurality of first electrode conductors.

11. The photovoltaic module according to claim 10 , wherein S1 ranges from 0.001 μm 2 to 0.05 μm 2 .

12. The photovoltaic module according to claim 9 , wherein an area S2 of an orthographic projection of the second electrode conductor of the plurality of second electrode conductors on the silicon substrate ranges from 0.05 μm 2 to 0.1 μm 2 .

13. The photovoltaic module according to claim 9 , wherein an area of an orthographic projection of each of the protruding portions first protruding portion and the second protruding portion on the silicon substrate is S3, an overlapping area between each of the first protruding portion and the second protruding portion and the body portion is S4, and an area of S3 subtracted by S4 ranges from 0.002 μm 2 to 0.1 μm 2 .

14. The photovoltaic module according to claim 9 , wherein an area of an orthographic projection of the body portion on the silicon substrate is S5, and S5 ranges from 0.05 μm 2 to 0.1 μm 2 .

15. The photovoltaic module according to claim 9 ,
wherein the plurality of first electrode conductors are formed by curing of a f

Assignees

• Zhejiang Jinko Solar Co Ltd

Inventors

• Zhang Xiaowen
• Li Wenqi
• Zhao Shijie
• Yu Ding
• Chai Jialei
• Yang Jie
• Xu Menglei

Classifications

• H10F77/311

  for photovoltaic cells · CPC title

• H10F77/122

  comprising only Group IV materials · CPC title

• H10F71/121

  The active layers comprising only Group IV materials · CPC title

• H10F71/129

  Passivating · CPC title

• H10F10/00

  Individual photovoltaic cells, e.g. solar cells (electrolytic light-sensitive devices, e.g. dye-sensitised solar cells, H01G9/20) · CPC title