Method for producing chlorosilanes

US11845667B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11845667-B2
Application numberUS-201817048304-A
CountryUS
Kind codeB2
Filing dateApr 18, 2018
Priority dateApr 18, 2018
Publication dateDec 19, 2023
Grant dateDec 19, 2023

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Chlorosilanes of the general formula H n SiCl 4-n and/or H m Cl 6-m Si 2 , where n=1-4 and m=0-4, are produced in a fluidized bed reactor by reaction of a hydrogen chloride-containing reaction gas with a silicon contact mass granulation mixture composed of a coarse grain fraction and a fine grain fraction, wherein the average particle size of the fine grain fraction d 50,fine is smaller than the average particle size of the coarse grain fraction d 50,coarse .

First claim

Opening claim text (preview).

The invention claimed is: 1. A process for producing chlorosilanes of the general formula H n SiCl 4-n and/or H m Cl 6-m Si 2 , where n=1-4 and m=0-4, in a fluidized bed reactor, comprising: reacting a hydrogen chloride-containing reaction gas with a contact mass which comprises silicon as a granulation mixture composed of a coarse grain fraction and a fine grain fraction, wherein the average particle size of the fine grain fraction d 50,fine is 5 to 400 μm and the average particle size of the coarse grain fraction d 50,coarse is 125 to 600 μm, with the proviso that d 50,fine is smaller than d 50,coarse and the difference d 50,coarse −d 50,fine is greater than 1 μm, wherein d 50,fine and d 50,coarse are present in a grain size ratio d 50,fine /d 50,coarse of 0.02 to 0.9, the fine grain fraction and the coarse grain fraction are present in a mass ratio m(fine)/m(coarse) of 0.05 to 20, and wherein the granulation mixture has a span of particle size distribution d 90 −d 10 /d 50 of 1 to 100. 2. The process of claim 1 , wherein the granulation mixture has a p-modal, volume-weighted distribution density function, where p=1 to 10. 3. The process of claim 1 , wherein the granulation mixture has a p-modal, volume-weighted distribution density function, where p=1 to 3. 4. The process of claim 1 , wherein d 50,fine and d 50,coarse are present in a grain size ratio d 50,fine /d 50,coarse of 0.03 to 0.7. 5. The process of claim 1 , wherein the fine grain fraction and the coarse grain fraction are present in a mass ratio m(fine)/m(coarse) of 0.09 to 10. 6. The process of claim 1 , wherein the fine grain fraction and the coarse grain fraction are present in a mass ratio m(fine)/m(coarse) of 0.09 to 4. 7. The process of claim 1 , wherein the granulation mixture has a span of particle size distribution d 90 −d 10 /d 50 of 1.5 to 10. 8. The process of claim 1 , wherein the silicon is metallurgical silicon and ultrahigh purity silicon, wherein the proportion of metallurgical silicon is at least 50% by weight, based on the total weight of the contact mass. 9. The process of claim 8 , wherein the ultrahigh purity silicon is a constituent of the fine grain fraction. 10. The process of claim 1 , wherein the silicon is metallurgical silicon and ultrahigh purity silicon, wherein the proportion of metallurgical silicon is less than 50% by weight and the granulation mixture additionally contains a catalyst. 11. The process of claim 10 , wherein the ultrahigh purity silicon and/or the catalyst are constituents of the fine grain fraction. 12. The process of claim 1 , wherein the silicon is ultrahigh purity silicon and the granulation mixture contains a catalyst. 13. The process of claim 1 , wherein the silicon is ultrahigh purity silicon and the granulation mixture contains a catalyst, wherein the catalyst is a constituent of the fine grain fraction. 14. The process of claim 1 , wherein the fine grain fraction and the coarse grain fraction are supplied to the fluidized bed reactor as a pre-prepared granulation mixture. 15. The process of claim 1 , wherein the fine grain fraction and the coarse grain fraction are each supplied to the fluidized bed reactor separately. 16. The process of claim 1 , wherein a quotient of fluidized bed height to reactor diameter is 10:1 to 1:1. 17. The process of claim 1 , wherein a quotient of fluidized bed height to reactor diameter is 6:1 to 3:1. 18. The process of claim 1 , wherein the chlorosilanes are selected from the group comprising monochlorosilane, dichlorosilane, trichlorosilane, Si 2 Cl 6 , HSi 2 Cl 5 , and mixtures thereof. 19. The process of claim 1 , which is integrated into an integrated system for producing polycrystalline silicon.

Assignees

Inventors

Classifications

  • prepared by hydrochlorination of silicon or of a silicon-containing material · CPC title

  • according to "fluidised-bed" technique (B01J8/20 takes precedence) · CPC title

  • Particles with a specific particle size distribution · CPC title

  • Solid density · CPC title

  • Compositional purity · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11845667B2 cover?
Chlorosilanes of the general formula H n SiCl 4-n and/or H m Cl 6-m Si 2 , where n=1-4 and m=0-4, are produced in a fluidized bed reactor by reaction of a hydrogen chloride-containing reaction gas with a silicon contact mass granulation mixture composed of a coarse grain fraction and a fine grain fraction, wherein the average particle size of the fine grain fraction d 50,fine is smaller than …
Who is the assignee on this patent?
Wacker Chemie Ag
What technology area does this patent fall under?
Primary CPC classification C01B33/10742. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 19 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).