Semiconductor device, manufacturing method thereof, display device, and electronic device

Patent metadata

Field	Value
Publication number	US-11842901-B2
Application number	US-202217843083-A
Country	US
Kind code	B2
Filing date	Jun 17, 2022
Priority date	Feb 18, 2016
Publication date	Dec 12, 2023
Grant date	Dec 12, 2023

Abstract

The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first gate electrode over a substrate;
a first insulating layer over the first gate electrode;
an oxide semiconductor layer over the first insulating layer, the oxide semiconductor layer having a single-layer structure;
a second insulating layer over the oxide semiconductor layer;
a third insulating layer over the second insulating layer;
a fourth insulating layer over the third insulating layer;
a second gate electrode comprising a first conductive film and a second conductive film over the first conductive film, the second gate electrode being over the second insulating layer; and
a third conductive film and a fourth conductive film over the fourth insulating layer,
wherein end portions of the first gate electrode extend beyond end portions of the second gate electrode,
wherein an end portion of the first conductive film is aligned with an end portion of the second conductive film,
wherein the third insulating layer is in contact with a top surface and a side surface of the second gate electrode and with a top surface of the second insulating layer,
wherein the fourth conductive film is electrically connected to the oxide semiconductor layer via an opening in the third insulating layer and the fourth insulating layer,
wherein the oxide semiconductor layer comprises a first region overlapping with the second gate electrode and a pair of second regions sandwiching the first region,
wherein a conductivity of the first region is different from a conductivity of the pair of second regions,
wherein a thickness of the second insulating layer is larger than a thickness of the first conductive film and smaller than a thickness of the second conductive film,
wherein a fifth conductive film formed by processing a film to be the first gate electrode is provided over the substrate, and
wherein the fifth conductive film is configured to function as an electrode of a capacitor.

2. The semiconductor device according to claim 1 , wherein a bottom surface of the second gate electrode is provided below a top surface of the oxide semiconductor layer.

3. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises a nanocrystal having a size of 1 nm to 3 nm.

4. A semiconductor device comprising:
a first gate electrode over a substrate;
a first insulating layer over the first gate electrode;
an oxide semiconductor layer over the first insulating layer, the oxide semiconductor layer having a single-layer structure and comprising indium, gallium, and zinc;
a second insulating layer over the oxide semiconductor layer;
a third insulating layer over the second insulating layer;
a fourth insulating layer over the third insulating layer;
a second gate electrode comprising a first conductive film and a second conductive film over the first conductive film, the second gate electrode being over the second insulating layer; and
a third conductive film and a fourth conductive film over the fourth insulating layer,
wherein end portions of the first gate electrode extend beyond end portions of the second gate electrode,
wherein an end portion of the first conductive film is aligned with an end portion of the second conductive film,
wherein the third insulating layer is in contact with a top surface and a side surface of the second gate electrode and with a top surface of the second insulating layer,
wherein the fourth conductive film is electrically connected to the oxide semiconductor layer,
wherein the oxide semiconductor layer comprises a first region overlapping with the second gate electrode and a pair of second regions sandwiching the first region,
wherein a conductivity of the first region is different from a conductivity of the pair of second regions,
wherein a thickness of the second insulating layer is larger than a thickness of the first conductive film and smaller than a thickness of the second conductive film,
wherein a fifth conductive film formed by processing a film to be the first gate electrode is provided over the substrate, and
wherein the fifth conductive film is configured to function as an electrode of a capacitor.

5. The semiconductor device according to claim 4 , wherein a bottom surface of the second gate electrode is provided below a top surface of the oxide semiconductor layer.

6. The semiconductor device according to claim 4 , wherein the oxide semiconductor layer comprises a nanocrystal having a size of 1 nm to 3 nm.

7. A semiconductor device comprising:
a first gate electrode over a substrate;
a first insulating layer over the first gate electrode;
an oxide semiconductor layer over the first insulating layer;
a second insulating layer over the oxide semiconductor layer, the second insulating layer having an island shape;
a third insulating layer over the second insulating layer;
a fourth insulating layer over the third insulating layer;
a second gate electrode comprising a first conductive film and a second conductive film over the first conductive film, the second gate electrode being over the second insulating layer; and
a third conductive film and a fourth conductive film over the fourth insulating layer,
wherein an end portion of the first conductive film is aligned with an end portion of the second conductive film,
wherein the third insulating layer is in contact with a top surface and a side surface of the second gate electrode, with a top surface and a side surface of the second insulating layer, and with a top surface and a side surface of the oxide semiconductor layer,
wherein the fourth conductive film is electrically connected to the oxide semiconductor layer via an opening in the third insulating layer and the fourth insulating layer,
wherein the oxide semiconductor layer comprises a first region overlapping with the second gate electrode and a pair of second regions sandwiching the first region,
wherein a conductivity of the first region is different from a conductivity of the pair of second regions,
wherein a thickness of the second insulating layer is larger than a thickness of the first conductive film and smaller than a thickness of the second conductive film,
wherein a fifth conductive film formed by processing a film to be the third conductive film and the fourth conductive film is provided over the fourth insulating layer,
wherein the fifth conductive film is configured to function as an electrode of a capacitor, and
wherein a bottom surface of the second gate electrode is provided below a top surface of the oxide semiconductor layer.

8. The semiconductor device according to claim 7 , wherein the oxide semiconductor layer comprises a nanocrystal having a size of 1 nm to 3 nm.

Assignees

• Semiconductor Energy Lab

Inventors

• Jintyou Masami
• Koezuka Junichi
• Hamochi Takashi
• Hosaka Yasuharu

Classifications

• H10P50/28

  of insulating materials · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6927 Primary

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6522

  introduced into a nitride material, e.g. changing SiN to SiON · CPC title