Semiconductor optical device and semiconductor assembly
US-2017131473-A1 · May 11, 2017 · US
US11837620B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11837620-B2 |
| Application number | US-202117158537-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 26, 2021 |
| Priority date | Jan 30, 2020 |
| Publication date | Dec 5, 2023 |
| Grant date | Dec 5, 2023 |
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A photo receiver includes a photo detector including a semiconductor substrate having a first main surface and a second main surface and a metal pattern layer provided on the second main surface; and a carrier including a supporting substrate having a third main surface facing the second main surface and a solder pattern layer provided on the third main surface. The solder pattern layer is bonded to the metal pattern layer. The first main surface is provided with a variable optical attenuator, an optical 90-degree hybrid device, and a plurality of photodiodes optically coupled to the variable optical attenuator via the optical 90-degree hybrid device. The solder pattern layer and the metal pattern layer are located in a peripheral area surrounding a central area where the variable optical attenuator and the optical 90-degree hybrid device are located when viewed in the normal direction of the first main surface.
Opening claim text (preview).
What is claimed is: 1. A photo receiver comprising: a photo detector including a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface, and a metal pattern layer provided on the second main surface; and a carrier including a supporting substrate having a third main surface facing the second main surface, and a solder pattern layer provided on the third main surface, the solder pattern layer being bonded to the metal pattern layer, the first main surface being provided with a variable optical attenuator, an optical 90-degree hybrid device, and a plurality of photodiodes optically coupled to the variable optical attenuator via the optical 90-degree hybrid device, and the solder pattern layer and the metal pattern layer being located in a peripheral area surrounding a central area where the variable optical attenuator and the optical 90-degree hybrid device are located when viewed in a normal direction of the first main surface, whereby the solder pattern layer and the metal pattern layer are not located in the central area when viewed in the normal direction of the first main surface. 2. The photo receiver according to claim 1 , wherein the first main surface is provided with an input port into which a local oscillation light is inputted, the input port being optically coupled to the optical 90-degree hybrid device, and wherein each of the solder pattern layer and the metal pattern layer includes a portion adjacent to the input port when viewed in the normal direction of the first main surface. 3. The photo receiver according to claim 1 , wherein the variable optical attenuator and the optical 90-degree hybrid device are arranged in a first direction, wherein the solder pattern layer includes a pair of first portions extending along the first direction and a second portion connecting the pair of first portions, when viewed in the normal direction of the first main surface, and wherein the metal pattern layer includes a pair of third portions extending along the first direction and a fourth portion disposed apart from the pair of third portions, when viewed in the normal direction of the first main surface. 4. The photo receiver according to claim 3 , wherein the second portion extends along a direction intersecting the first direction, when viewed in the normal direction of the first main surface, and the fourth portion extends along a direction intersecting the first direction, when viewed in the normal direction of the first main surface. 5. The photo receiver according to claim 3 , wherein one of the third portions entirely overlaps with one of the first portions when viewed in the normal direction of the first main surface, wherein the other of the third portions entirely overlaps with the other of the first portions when viewed in the normal direction of the first main surface, and wherein the fourth portion entirely overlaps with the second portion when viewed in the normal direction of the first main surface.
Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels · CPC title
Interconnections · CPC title
Optical elements or arrangements associated with the image sensors · CPC title
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