Photo receiver

US11837620B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11837620-B2
Application numberUS-202117158537-A
CountryUS
Kind codeB2
Filing dateJan 26, 2021
Priority dateJan 30, 2020
Publication dateDec 5, 2023
Grant dateDec 5, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A photo receiver includes a photo detector including a semiconductor substrate having a first main surface and a second main surface and a metal pattern layer provided on the second main surface; and a carrier including a supporting substrate having a third main surface facing the second main surface and a solder pattern layer provided on the third main surface. The solder pattern layer is bonded to the metal pattern layer. The first main surface is provided with a variable optical attenuator, an optical 90-degree hybrid device, and a plurality of photodiodes optically coupled to the variable optical attenuator via the optical 90-degree hybrid device. The solder pattern layer and the metal pattern layer are located in a peripheral area surrounding a central area where the variable optical attenuator and the optical 90-degree hybrid device are located when viewed in the normal direction of the first main surface.

First claim

Opening claim text (preview).

What is claimed is: 1. A photo receiver comprising: a photo detector including a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface, and a metal pattern layer provided on the second main surface; and a carrier including a supporting substrate having a third main surface facing the second main surface, and a solder pattern layer provided on the third main surface, the solder pattern layer being bonded to the metal pattern layer, the first main surface being provided with a variable optical attenuator, an optical 90-degree hybrid device, and a plurality of photodiodes optically coupled to the variable optical attenuator via the optical 90-degree hybrid device, and the solder pattern layer and the metal pattern layer being located in a peripheral area surrounding a central area where the variable optical attenuator and the optical 90-degree hybrid device are located when viewed in a normal direction of the first main surface, whereby the solder pattern layer and the metal pattern layer are not located in the central area when viewed in the normal direction of the first main surface. 2. The photo receiver according to claim 1 , wherein the first main surface is provided with an input port into which a local oscillation light is inputted, the input port being optically coupled to the optical 90-degree hybrid device, and wherein each of the solder pattern layer and the metal pattern layer includes a portion adjacent to the input port when viewed in the normal direction of the first main surface. 3. The photo receiver according to claim 1 , wherein the variable optical attenuator and the optical 90-degree hybrid device are arranged in a first direction, wherein the solder pattern layer includes a pair of first portions extending along the first direction and a second portion connecting the pair of first portions, when viewed in the normal direction of the first main surface, and wherein the metal pattern layer includes a pair of third portions extending along the first direction and a fourth portion disposed apart from the pair of third portions, when viewed in the normal direction of the first main surface. 4. The photo receiver according to claim 3 , wherein the second portion extends along a direction intersecting the first direction, when viewed in the normal direction of the first main surface, and the fourth portion extends along a direction intersecting the first direction, when viewed in the normal direction of the first main surface. 5. The photo receiver according to claim 3 , wherein one of the third portions entirely overlaps with one of the first portions when viewed in the normal direction of the first main surface, wherein the other of the third portions entirely overlaps with the other of the first portions when viewed in the normal direction of the first main surface, and wherein the fourth portion entirely overlaps with the second portion when viewed in the normal direction of the first main surface.

Assignees

Inventors

Classifications

  • Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels · CPC title

  • H10F39/811Primary

    Interconnections · CPC title

  • Optical elements or arrangements associated with the image sensors · CPC title

  • H10F39/809Primary

    of hybrid image sensors · CPC title

  • Electricity · mapped topic

Patent family

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Frequently asked questions

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What does patent US11837620B2 cover?
A photo receiver includes a photo detector including a semiconductor substrate having a first main surface and a second main surface and a metal pattern layer provided on the second main surface; and a carrier including a supporting substrate having a third main surface facing the second main surface and a solder pattern layer provided on the third main surface. The solder pattern layer is bond…
Who is the assignee on this patent?
Sumitomo Electric Industries
What technology area does this patent fall under?
Primary CPC classification H10F39/811. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 05 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).