Ferroelectric memory and memory element thereof

Patent metadata

Field	Value
Publication number	US-11837270-B2
Application number	US-202017436777-A
Country	US
Kind code	B2
Filing date	Feb 6, 2020
Priority date	Mar 22, 2019
Publication date	Dec 5, 2023
Grant date	Dec 5, 2023

Abstract

A ferroelectric memory is intended to reduce an applied voltage required at the times of writing and reading. A ferroelectric capacitor includes a ferroelectric film and a top electrode and a bottom electrode including materials with different work functions formed above and below the ferroelectric film. The transistor is connected to either the top electrode or the bottom electrode to select the ferroelectric capacitor. A drive control unit applies, at the times of writing and reading, a voltage lower than that at the time of erasing by a predetermined potential difference to the ferroelectric film.

First claim

What is claimed is:

1. A ferroelectric memory, comprising:
a ferroelectric capacitor including a ferroelectric film above and below which a top electrode and a bottom electrode including materials with different work functions are disposed;
a transistor connected to either the top electrode or the bottom electrode to select the ferroelectric capacitor; and
a drive control unit that applies, at times of writing and reading, a voltage lower than that applied at a time of erasing by a predetermined potential difference to the ferroelectric film.

2. The ferroelectric memory according to claim 1 , wherein
the predetermined potential difference is a voltage depending on the work functions of the materials of the top electrode and the bottom electrode.

3. The ferroelectric memory according to claim 1 , wherein
the predetermined potential difference is a voltage corresponding to an absolute value of a difference between the work functions of the materials of the top electrode and the bottom electrode.

4. The ferroelectric memory according to claim 1 , wherein
the drive control unit applies, at the time of erasing, a voltage with a longer pulse width than at the time of writing to the ferroelectric film.

5. The ferroelectric memory according to claim 1 , wherein
the drive control unit performs, at the time of reading, rewriting by applying a voltage with a pulse width and a voltage value equivalent to those at the time of erasing to the ferroelectric film.

6. The ferroelectric memory according to claim 1 , wherein
the transistor is an N-type transistor, and
one of the top electrode and the bottom electrode to which a voltage of a higher absolute value is applied at the time of writing or reading includes a material with a lower work function than the other.

7. The ferroelectric memory according to claim 6 , further comprising a contact that connects one of the top electrode and the bottom electrode to which the voltage of the higher absolute value is applied at the time of writing or reading and the transistor.

8. The ferroelectric memory according to claim 7 , wherein
the bottom electrode is connected to the transistor via the contact, and includes a material with a higher work function than the top electrode.

9. The ferroelectric memory according to claim 7 , wherein
the top electrode is connected to the transistor via the contact, and includes a material with a higher work function than the bottom electrode.

10. The ferroelectric memory according to claim 1 , wherein
the transistor is a P-type transistor, and
one of the top electrode and the bottom electrode to which a voltage of a higher absolute value is applied at the time of writing or reading includes a material with a higher work function than the other.

11. The ferroelectric memory according to claim 1 , further comprising a sense amplifier that amplifies a potential of the ferroelectric capacitor selected by the transistor.

12. The ferroelectric memory according to claim 1 , wherein
the ferroelectric film includes a material with an electronegativity of a metal atom of less than 1.7.

13. The ferroelectric memory according to claim 1 , wherein
the ferroelectric film includes a hafnium oxide film.

14. A ferroelectric memory element comprising:
a ferroelectric film including a hafnium oxide film;
a top electrode and a bottom electrode, wherein the top electrode is on a first side of the ferroelectric film, wherein the bottom electrode is on a second side of the ferroelectric film, and wherein the top electrode and the bottom electrode include materials having different work functions;
a transistor connected to one of the top electrode and the bottom electrode via a contact; and
a drive control unit that applies, at times of writing and reading, a voltage lower than that applied at a time of erasing by a predetermined potential difference to the ferroelectric film.

Assignees

• Sony Semiconductor Solutions Corp
• Sony Group Corp

Inventors

• Okuno Jun
• Kobayashi Toshiyuki

Classifications

• G11C11/2275 Primary

  Writing or programming circuits or methods · CPC title

• G11C11/221 Primary

  using ferroelectric capacitors · CPC title

• G11C11/2273

  Reading or sensing circuits or methods · CPC title

• H10B53/30

  characterised by the memory core region · CPC title

• G11C11/2259

  Cell access · CPC title