Spin-orbit-torque magnetization rotational element and magnetic memory

Patent metadata

Field	Value
Publication number	US-11832526-B2
Application number	US-202217578625-A
Country	US
Kind code	B2
Filing date	Jan 19, 2022
Priority date	Sep 4, 2017
Publication date	Nov 28, 2023
Grant date	Nov 28, 2023

Abstract

A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.

First claim

The invention claimed is:

1. A spin-orbit-torque magnetization rotational element, comprising:
a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change;
a spin-orbit torque wiring which extends in a first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and
a via wire (i) which extends from a first surface of the spin-orbit torque wiring in a direction intersecting the first direction and (ii) that is connected to a semiconductor circuit, wherein:
the ferromagnetic layer is joined to a second surface of the spin-orbit torque wiring; and
the first surface is opposite the second surface.

2. The spin-orbit-torque magnetization rotational element according to claim 1 , wherein
the spin-orbit torque wiring has a laminated structure in a lamination direction of the spin-orbit torque wiring, and
a resistance value of a first layer of the spin-orbit torque wiring that is adjacent to the ferromagnetic metal layer is lower than a resistance value of a second layer of the spin-orbit torque wiring that is adjacent to the via wire.

3. The spin-orbit-torque magnetization rotational element according to claim 1 , further comprising:
a planarizing layer between the via wire and the spin-orbit torque wiring, wherein the planarizing layer is made of a nitride containing Ti or Ta.

4. The spin-orbit-torque magnetization rotational element according to claim 1 , wherein,
the via wire consists of two via wires, and
a Vickers hardness difference between the two via wires and an interlayer insulating part configured to insulate the two via wires is 3 GPa or less.

5. The spin-orbit-torque magnetization rotational element according to claim 1 , further comprising:
a non-magnetic layer and a magnetization fixed layer, a magnetization direction of the magnetization fixed layer being configured to be fixed to the ferromagnetic metal layer,
wherein the non-magnetic layer and the magnetization fixed layer are on an opposite side of the ferromagnetic metal layer from the spin-orbit torque wiring.

6. The spin-orbit-torque magnetization rotational element according to claim 5 , wherein an area of the ferromagnetic metal layer when viewed in a plan view from a vertical direction is larger than an area of the magnetization fixed layer when viewed in the plan view from the vertical direction.

7. The spin-orbit-torque magnetization rotational element according to claim 1 , wherein the via wire and the magnetoresistance effect element partially overlap, when viewed in a plan view from a vertical direction.

8. The spin-orbit-torque magnetization rotational element according to claim 1 , wherein the via wire and the magnetoresistance effect element do not overlap, when viewed in a plan view from a vertical direction.

9. The spin-orbit-torque magnetization rotational element according to claim 4 , wherein a difference in height position between the via wire and the interlayer insulating part in a vertical direction is 1.5 nm or less.

10. The spin-orbit-torque magnetization rotational element according to claim 4 , wherein a degree of convexity obtained by dividing difference in height position between the via wire and the interlayer insulating part in a vertical direction by width of the interlayer insulating part is 0.015 or less.

11. The spin-orbit-torque magnetization rotational element according to claim 5 , wherein the non-magnetic layer is made of an insulator which is at least one selected from a group consisting of Al 2 O 3 , SiO 2 , MgO, Ga 2 O 3 , MgAl 2 O 4 , materials obtained by substituting a part of Al, Si, Ma in Al 2 O 3 , SiO 2 , MgO, Ga 2 O 3 , and MgAl 2 O 4 with Zn or Be, materials obtained by substituting Mg in MgAl 2 O 4 with Zn, and materials obtained by substituting Al in MgAl 2 O 4 with Ga or In.

12. The spin-orbit-torque magnetization rotational element according to claim 5 , wherein the non-magnetic layer is made of a material which is at least one selected from a group consisting of Cu, Ag, Ag—Sn, Ag—Mg, Si, Ge, CuInSe 2 , CuGaSe 2 , and Cu(In, Ga)Se 2 .

13. The spin-orbit-torque magnetization rotational element according to claim 1 , wherein the ferromagnetic metal layer is made of a material which is at least one selected from a group consisting of Cr, Mn, Co, Fe, Ni, alloy including at least one of Cr, Mn, Co, Fe, N, and an alloy including at least one of Cr, Mn, Co, Fe, N and at least one of B and C.

14. The spin-orbit-torque magnetization rotational element according to claim 5 , wherein the magnetization fixed layer is made of a material which is at least one selected from a group consisting of Cr, Mn, Co, Fe, Ni, alloy including at least one of Cr, Mn, Co, Fe, N, and an alloy including at least one of Cr, Mn, Co, Fe, N and at least one of B and C.

Assignees

• Tdk Corp

Inventors

• SUDA Keita
• Sasaki Tomoyuki

Classifications

• H10D48/40

  Devices controlled by magnetic fields · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• H10N50/80

  Constructional details · CPC title