RF switch device

Patent metadata

Field	Value
Publication number	US-11830923-B2
Application number	US-202217718055-A
Country	US
Kind code	B2
Filing date	Apr 11, 2022
Priority date	Apr 16, 2021
Publication date	Nov 28, 2023
Grant date	Nov 28, 2023

Abstract

Disclosed is an RF switch device and, more particularly, an RF switch device having an air gap over a gate electrode and a metal interconnect at a position higher than the air gap and that at least partially overlap the air gap in the vertical direction, thereby preventing exposure of an upper portion of the air gap in subsequent processing.

First claim

The invention claimed is:

1. An RF switch device, comprising:
a semiconductor layer;
a gate electrode on the semiconductor layer;
a source on the semiconductor layer;
a drain on the semiconductor layer;
a first source contact connected to the source;
a first metal interconnect connected to the first source contact;
a second source contact connected to the first metal interconnect;
a second metal interconnect connected to the second source contact;
a first drain contact connected to the drain;
a third metal interconnect connected to the first drain contact;
a second drain contact connected to the third metal interconnect;
a fourth metal interconnect connected to the second drain contact; and
air gaps over the gate electrodes and below the second metal interconnect and the fourth metal interconnect,
wherein the second metal interconnect includes:
a source tab extending along a first direction and electrically connected to a plurality of source extension portions; and
the plurality of source extension portions, extending in a second direction from a first side of the source tab, spaced apart from each other in the first direction, the fourth metal interconnect includes:
a drain tab extending along the first direction and electrically connected to a plurality of drain extension portions and spaced apart from the source tab in the second direction; and
the plurality of drain extension portions extending in the second direction from the first side of the drain tab, spaced apart from each other in the first direction, and

each of the second source extension portions and the second drain extension portions have a width sufficient to cover an uppermost end of an adjacent one of the air gaps.

2. The RF switch device of claim 1 , further comprising:
a lower insulating layer on the semiconductor layer;
an intermediate insulating layer on the lower insulating layer; and
an upper insulating layer on the middle insulating layer,
wherein the lower insulating layer includes a first contact hole through which the first source contact and the first drain contact pass,
the intermediate insulating layer includes a second contact hole through which the second source contact and the second drain contact pass, and
the upper insulating layer includes a third contact hole through which the second source contact and the second drain contact pass.

3. The RF switch device of claim 2 , wherein adjacent ones of the second source extension portions and the second drain extension portions do not overlap each other along the first direction.

4. The RF switch device of claim 3 , wherein the air gaps are not in a location below a gap between adjacent ones of the second source extension portions and the drain extension portions.

Assignees

• Db Hitek Co Ltd

Inventors

• Eom Seung Hyun
• Jung Jin Hyo
• Kim Hae Taek
• Koo Ja Geon
• Lim Ki Won
• Lee Hyun Joong
• Lee Sang Yong

Classifications

• H10W20/43

  Layouts of interconnections · CPC title

• H10W20/47

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title

• H10W20/495

  Capacitive arrangements or effects of, or between wiring layers · CPC title

• H10W20/40

  Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes · CPC title

• H10W20/46

  comprising air gaps · CPC title