Composite sintered body, semiconductor manufacturing apparatus member and method of producing composite sintered body

US11830753B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11830753-B2
Application numberUS-202117447102-A
CountryUS
Kind codeB2
Filing dateSep 8, 2021
Priority dateSep 14, 2020
Publication dateNov 28, 2023
Grant dateNov 28, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A composite sintered body includes a base material that contains Al 2 O 3 as a main component, and an electrode arranged inside or on a surface of the base material. The electrode contains Ru, ZrO 2 , and Al 2 O 3 .

First claim

Opening claim text (preview).

The invention claimed is: 1. A composite sintered body comprising: a base material that contains aluminum oxide as a main component; and an electrode arranged inside said base material or on a surface of said base material, wherein said electrode contains: ruthenium; zirconium oxide; and aluminum oxide, wherein a content of said aluminum oxide in said electrode is 0.2 times or more and 3.8 times or less a content of said zirconium oxide in said electrode. 2. The composite sintered body according to claim 1 , wherein an absolute value for a difference in thermal expansion coefficient between said electrode and said base material is less than or equal to 0.3 ppm/° C. at a temperature within a range higher than or equal to 40° C. and lower than or equal to 1000° C. 3. The composite sintered body according to claim 1 , wherein said electrode has resistivity lower than or equal to 3.0×10 −5 Ω·cm at a room temperature. 4. The composite sintered body according to claim 1 , wherein a total content of said zirconium oxide and said aluminum oxide in said electrode is higher than or equal to 20% by volume. 5. The composite sintered body according to claim 1 , wherein a total content of said ruthenium, said zirconium oxide, and said aluminum oxide in a solid-state material of said electrode is 100% by volume. 6. The composite sintered body according to claim 1 , wherein a ratio between a main peak intensity of said ruthenium and a main peak intensity of said zirconium oxide in said electrode is higher than or equal to 0.80 and lower than 1.0, the ratio being obtained by X-ray diffractometry. 7. The composite sintered body according to claim 1 , wherein when a sectional SEM image of said electrode that is taken parallel to a thickness direction of said electrode is divided into three equal parts and if the three equal parts are respectively referred to as a first region, a second region, and a third region in order from one side in the thickness direction, an area of said zirconium oxide in said second region located in a center is 0.5 times or more and 2.0 times or less the area of said zirconium oxide in said first region located between said second region and said base material. 8. The composite sintered body according to claim 1 , wherein an adhesion strength of said electrode to said base material is higher than or equal to 90 MPa. 9. A semiconductor manufacturing apparatus member for use in a semiconductor manufacturing apparatus, being prepared using the composite sintered body according to claim 1 , wherein said base material has a disk-like shape and has a main surface on which a semiconductor substrate is placed. 10. A method of producing a composite sintered body, comprising: a) preparing a first member and a second member that are each one of a green body, a calcined body, and a sintered body that contains aluminum oxide as a main component; b) drying said first member by application of a paste electrode material that contains ruthenium, zirconium oxide, and aluminum oxide to said first member; c) laminating said second member on said first member to form a laminate; and d) firing said laminate by hot pressing, wherein a content of said aluminum oxide in an electrode formed from said electrode material by said operation d) is 0.2 times or more and 3.8 times or less a content of said zirconium oxide in said electrode. 11. The method of producing a composite sintered body, according to claim 10 , wherein said first member in said operation a) is either a calcined body or a tape cast. 12. The method of producing a composite sintered body, according to claim 10 , wherein an absolute value for a difference in thermal expansion coefficient between said electrode and said first member after completion of said operation d) is less than or equal to 0.3 ppm/° C. at a temperature within a range higher than or equal to 40° C. and lower than or equal to 1000° C. 13. The method of producing a composite sintered body, according to claim 10 , wherein a firing temperature in said operation d) is higher than or equal to 1550° C. and lower than or equal to 1650° C.

Assignees

Inventors

Classifications

  • H10P72/722Primary

    Details of electrostatic chucks · CPC title

  • characterised by a coating, a hardness or a material · CPC title

  • using electrostatic chucks · CPC title

  • mainly by conduction · CPC title

  • Electricity · mapped topic

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Frequently asked questions

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What does patent US11830753B2 cover?
A composite sintered body includes a base material that contains Al 2 O 3 as a main component, and an electrode arranged inside or on a surface of the base material. The electrode contains Ru, ZrO 2 , and Al 2 O 3 .
Who is the assignee on this patent?
Ngk Insulators Ltd
What technology area does this patent fall under?
Primary CPC classification H10P72/722. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 28 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).