Array substrate, method for preparing array substrate, display panel and display device
US-2019131373-A1 · May 2, 2019 · US
US11825699B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11825699-B2 |
| Application number | US-202017267082-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 20, 2020 |
| Priority date | May 23, 2019 |
| Publication date | Nov 21, 2023 |
| Grant date | Nov 21, 2023 |
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There is provided an organic light-emitting diode including: a pixel defining layer on a substrate and having a plurality of openings for defining pixel regions, wherein each pixel region is a region including one pixel therein; a plurality of first pixel electrodes on the substrate and in the plurality of openings, respectively, each first pixel electrode being at a peripheral portion of a corresponding opening adjacent to the pixel defining layer; and a plurality of second pixel electrodes on the substrate and in the plurality of openings, respectively, each second pixel electrode being at a central portion of the corresponding opening. Each first pixel electrode is between the pixel defining layer and a corresponding second pixel electrode, and the plurality of first pixel electrodes and the plurality of second pixel electrodes are in a same layer. Each first pixel electrode includes a shape memory alloy material.
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What is claimed is: 1. An organic light-emitting diode, comprising: a pixel defining layer on a substrate and having a plurality of openings for defining pixel regions, wherein each of the pixel regions is a region comprising one pixel therein; a plurality of first pixel electrodes on the substrate and in the plurality of openings, respectively, each of the plurality of first pixel electrodes being at a peripheral portion of a corresponding opening adjacent to the pixel defining layer; and a plurality of second pixel electrodes on the substrate and in the plurality of openings, respectively, each of the plurality of second pixel electrodes being at a central portion of the corresponding opening, wherein each of the plurality of first pixel electrodes is between the pixel defining layer and a corresponding one of the plurality of second pixel electrodes, and the plurality of first pixel electrodes and the plurality of second pixel electrodes are in a same layer, and wherein each of the plurality of first pixel electrodes comprises a shape memory alloy material. 2. The organic light-emitting diode according to claim 1 , wherein the shape memory alloy material is configured to form a protrusion during a drying process of ink-jet printing. 3. The organic light-emitting diode according to claim 1 , wherein the shape memory alloy material comprises at least one of an iron-nickel alloy material and a titanium-nickel alloy material. 4. The organic light-emitting diode according to claim 1 , further comprising: an organic functional layer in each of the plurality of openings and on the first and second pixel electrodes. 5. The organic light-emitting diode according to claim 4 , wherein the organic functional layer comprises a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer. 6. A method for manufacturing an organic light-emitting diode, comprising: forming a second pixel electrode layer on a substrate; forming a first photoresist layer on the second pixel electrode layer and patterning the first photoresist layer to form a patterned first photoresist layer; patterning the second pixel electrode layer to obtain a second pixel electrode; forming a first pixel electrode layer covering the patterned first photoresist layer and the second pixel electrode on the substrate; forming a second photoresist layer on the first pixel electrode layer and patterning the second photoresist layer; removing a portion of the first pixel electrode layer exposed by a patterned second photoresist layer to obtain a first pixel electrode that surrounds the second pixel electrode; removing the patterned first photoresist layer and the patterned second photoresist layer; and forming a pixel defining layer on a portion, on which the first and second pixel electrodes are not formed, of the substrate in a pixel region, wherein in a direction perpendicular to the substrate, the pixel defining layer has a thickness greater than each of a thickness of the first pixel electrode and a thickness of the second pixel electrode, such that the pixel defining layer forms an opening accommodating the first and second pixel electrodes, wherein the first pixel electrode comprises a shape memory alloy material. 7. The method according to claim 6 , further comprising: forming an organic functional layer covering the first and second pixel electrodes in the opening. 8. The method according to claim 7 , wherein the forming an organic functional layer comprises: an ink-jet printing process and a drying process, wherein the first pixel electrode protrudes to have a first shape different from an original shape of the first pixel electrode during the drying process, such that a portion of ink of the organic functional layer at the first pixel electrode flows toward the second pixel electrode. 9. The method according to claim 8 , wherein the first shape of the first pixel electrode is restored to the original shape when the ink-jet printing process and the drying process are finished. 10. The method according to claim 6 , wherein the shape memory alloy material is selected from at least one of an iron-nickel alloy material and a titanium-nickel alloy material. 11. The method according to claim 7 , wherein the forming an organic functional layer comprises: forming a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer in sequence. 12. The method according to claim 6 , wherein the patterning the first photoresist layer comprises: exposing and developing the first photoresist layer. 13. The method according to claim 6 , wherein the patterning the second photoresist layer comprises: exposing and developing the second photoresist layer. 14. A display apparatus, comprising the organic light-emitting diode according to claim 1 . 15. The organic light-emitting diode according to claim 2 , wherein the shape memory alloy material comprises at least one of an iron-nickel alloy material and a titanium-nickel alloy material. 16. The organic light-emitting diode according to claim 2 , further comprising: an organic functional layer in each of the plurality of openings and on the first and second pixel electrodes. 17. The organic light-emitting diode according to claim 3 , further comprising: an organic functional layer in each of the plurality of openings and on the first and second pixel electrodes. 18. The organic light-emitting diode according to claim 15 , further comprising: an organic functional layer in each of the plurality of openings and on the first and second pixel electrodes. 19. The organic light-emitting diode according to claim 16 , wherein the organic functional layer comprises a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer. 20. The organic light-emitting diode according to claim 17 , wherein the organic functional layer comprises a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer.
Anodes · CPC title
Pixel-defining structures or layers, e.g. banks · CPC title
Hole transporting layers · CPC title
Electron transporting layers · CPC title
Electron injection layers · CPC title
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