Semiconductor laser element, testing method, and testing device

Patent metadata

Field	Value
Publication number	US-11824326-B2
Application number	US-202117158557-A
Country	US
Kind code	B2
Filing date	Jan 26, 2021
Priority date	Jul 27, 2018
Publication date	Nov 21, 2023
Grant date	Nov 21, 2023

Abstract

A semiconductor laser element that includes a semiconductor layer including a waveguide formed in an intra-layer direction of the semiconductor layer and a window region formed in a front-side end face of the waveguide, has a current-laser optical output characteristic in which, at an operating temperature of 25° C.±3° C., a laser optical output has a maximum value at a first driving current value and the laser optical output is at most 20% of the maximum value at a second driving current value greater than the first driving current value, and is not damaged at the second driving current value.

First claim

What is claimed is:

1. A semiconductor laser element, comprising a semiconductor layer, wherein
the semiconductor layer includes:
a waveguide formed in an intra-layer direction of the semiconductor layer; and
a window region formed in a front-side end face of the waveguide,

the semiconductor laser element has a current-laser optical output characteristic in which, at an operating temperature of 25° C.±3° C., a laser optical output has a maximum value at a first driving current when the first driving current is applied to the semiconductor laser element and the laser optical output is at most 20% of the maximum value at a second driving current when the second driving current greater than the first driving current is applied to the semiconductor laser element, and
the semiconductor laser element is not damaged at the second driving current value.

2. The semiconductor laser element according to claim 1 , wherein
the laser optical output is at most 100 mW at the second driving current.

3. The semiconductor laser element according to claim 1 , wherein
laser oscillation stops at the second driving current.

4. The semiconductor laser element according to claim 1 , wherein
a resonator length of the semiconductor laser element is at most 300 μm.

5. The semiconductor laser element according to claim 1 , wherein
an oscillation wavelength of the semiconductor laser element is at least 780 nm and at most 860 nm.

6. The semiconductor laser element according to claim 1 , comprising a substrate above which the semiconductor layer is disposed, the substrate containing GaAs, wherein
the semiconductor layer includes, sequentially above the substrate, an n-type clad layer containing n-type AlGaInP, an n-side light guiding layer, an active layer including a quantum well structure, a p-side light guiding layer, and a p-type clad layer containing p-type AlGaInP,
the quantum well structure is interposed between the p-side light guiding layer and the n-side light guiding layer, and includes a well layer and a barrier layer, wherein the barrier layer contains AlGaAs, and
the p-side light guiding layer and the n-side light guiding layer each contain Al y Ga z In (1-y-z) P, y being at least 0 and at most 0.1, z being at least 0 and at most 0.9, y+z being at least 0.3 and at most 0.7.

7. The semiconductor laser element according to claim 6 , wherein
the well layer contains GaAs, InGaAs, or GaAsP.

8. The semiconductor laser element according to claim 6 , wherein
the window region includes a window region formation impurity, and
a distance from an active layer lower end to a diffusion end of the window region formation impurity in the window region is at least 0.5 μm, the active layer lower end being a boundary between the n-side light guiding layer and the active layer, the diffusion end being closer to the substrate.

9. The semiconductor laser element according to claim 6 , wherein
the window region includes a disordered region in which a portion of the quantum well structure is disordered, and
a difference between an energy band gap in the disordered region and an energy band gap in a remaining portion of the quantum well structure is at least 30 meV.

10. The semiconductor laser element according to claim 5 , wherein
a peak wavelength of a spectrum from the window region is at least 30 nm shorter than the oscillation wavelength, the peak wavelength of the spectrum being obtained by a photoluminescence method or a cathodoluminescence method.

11. The semiconductor laser element according to claim 8 , wherein
a peak concentration of the window region formation impurity of a portion located in the window region within the active layer is at least 7×10 18 /cm 3 and at most 1×10 19 /cm 3 .

12. A testing method for determining whether a semiconductor laser element to be tested is defective, wherein
the semiconductor laser element to be tested includes a semiconductor layer,
the semiconductor layer includes a waveguide formed in an intra-layer direction of the semiconductor layer and a window region formed in a front-side end face of the waveguide, and
the testing method comprises:
measuring a characteristic of the semiconductor laser element to be tested;
energizing the semiconductor laser element to be tested at a second driving current value after the measuring, the second driving current value being greater than a first driving current value at which a laser optical output of the semiconductor laser element to be tested has a maximum value and being a value at which the laser optical output is at most 20% of the maximum value;
remeasuring the characteristic of the semiconductor laser element to be tested after the energizing; and
determining whether the semiconductor laser element to be tested is defective by comparing the characteristic of the semiconductor laser element to be tested which is obtained in the measuring with the characteristic of the semiconductor laser element to be tested which is obtained in the remeasuring.

13. The testing method according to claim 12 , wherein
the second driving current value specific to the semiconductor element to be tested is determined based on the characteristic obtained in the measuring.

14. The testing method according to claim 12 , wherein
in the measuring, a current value that is supplied to the semiconductor laser element to be tested when the laser optical output is a first output is a first test current value Ia,
in the remeasuring, a current value that is supplied to the semiconductor laser element to be tested when the laser optical output is the first output is a second test current value Ib, and
the determining includes determining that the semiconductor laser element to be tested is non-defective if (Ib−Ia)/Ib≤0.1 is satisfied.

15. The testing method according to claim 12 , wherein
the energizing includes energizing the semiconductor laser element to be tested with a current having a pulse width of at least 0.1 μs and at most 1 μs and a pulse duty ratio of at least 0.1% and at most 50%.

16. The testing method according to claim 12 , wherein
in the energizing, an energization time lasts at most 20 seconds.

17. The testing method according to claim 12 , wherein
an oscillation wavelength of the semiconductor laser element to be tested is at least 780 nm and at most 860 nm.

18. The testing method according to claim 12 , wherein
the semiconductor laser element to be tested includes a substrate above which the semiconductor layer is disposed, the substrate containing GaAs,
the semiconductor layer includes, sequentially above the substrate, an n-type clad layer containing n-type AlGaInP, an n-side light guiding layer, an active layer including a quantum well structure, a p-side light guiding layer, and a p-type clad layer containing p-type AlGaInP,
the quantum well structure is interposed between the p-side light guiding layer and the n-side light guiding layer, and includes a well layer and a barrier layer containing AlGaAs, and
the n-side light guiding layer and the p-side light guiding layer each contain Al y Ga z In (1-y-z) P, y being at least 0 and at most 0.1, z being at least 0 and at most 0.9, y+z being at least 0.3 and at most 0.7.

19. The testing method according to claim 18 , wherein
the well layer contains GaAs, InGaAs, or GaAsP.

20. A testing device for implementing the testing method according to claim 12 , the testing device comprising:
a test stage whose temperature is controlled and to which the semiconductor lase

Assignees

• Nuvoton Technology Corp Japan

Inventors

• Nagano Kazumasa
• Nagai Hiroki

Classifications

• H01S5/162 Primary

  with window regions made by diffusion or disordening of the active layer · CPC title

• H01S5/0021

  Degradation or life time measurements · CPC title

• H01S5/026

  Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) · CPC title

• H01S5/0207

  Substrates having a special shape · CPC title

• H01S5/3434

  with a well layer comprising at least both As and P as V-compounds · CPC title