Low defect high capacitance thin solid electrolyte capacitor and method of fabrication thereof

Patent metadata

Field	Value
Publication number	US-11823836-B2
Application number	US-202217696345-A
Country	US
Kind code	B2
Filing date	Mar 16, 2022
Priority date	Sep 17, 2019
Publication date	Nov 21, 2023
Grant date	Nov 21, 2023

Abstract

A method of fabricating a capacitor that includes: forming a three-dimensional structure over a substrate, the three-dimensional structure having a region with elongated pores extending towards the substrate from a top surface of the three-dimensional structure remote from the substrate or elongated columns extending away from the substrate towards the top surface of the three-dimensional structure remote from the substrate; forming a first electrode layer over a surface of the region of the three-dimensional structure, the first electrode conformal to the surface of the region; forming an intermediate layer over the first electrode layer; and forming a second electrode layer over the intermediate layer, the second electrode layer conformal to the intermediate layer, wherein forming the intermediate layer includes: forming a solid-state electrolyte layer partially conformal to the first electrode layer; and forming a dielectric layer conformal to the first electrode layer.

First claim

The invention claimed is:

1. A method of fabricating a capacitor, comprising:
forming a three-dimensional structure over a substrate, the three-dimensional structure comprising a region having elongated pores extending towards the substrate from a top surface of the three-dimensional structure remote from the substrate or elongated columns extending away from the substrate towards the top surface of the three-dimensional structure remote from the substrate;
forming a first electrode layer over a surface of said region of the three-dimensional structure, the first electrode layer conformal to said surface of said region;
forming an intermediate layer over the first electrode layer; and
forming a second electrode layer over the intermediate layer, the second electrode layer conformal to the intermediate layer,
wherein the forming of the intermediate layer comprises:
forming a solid-state electrolyte layer partially conformal to the first electrode layer; and
forming a dielectric layer conformal to the first electrode layer.

2. The method of claim 1 , wherein the solid-state electrolyte layer has a conformality to the first electrode layer greater than 50% and lower than 80% and the dielectric layer has a conformality to the first electrode layer greater than or equal to 80%.

3. The method of claim 1 , further comprising:
not verifying the conformality of the solid-state electrolyte layer during fabrication of the capacitor.

4. The method of claim 1 , further comprising:
forming the solid-state electrolyte layer over the first electrode layer; and
forming the dielectric layer over the solid-state electrolyte layer.

5. The method of claim 4 , wherein the first electrode layer includes an oxide layer suitable for ions diffusion/insertion.

6. The method of claim 5 , wherein the first electrode layer includes a conductive layer, the oxide layer suitable for adsorption occurring at an interface between the oxide layer and the conductive layer.

7. The method of claim 4 , wherein forming the intermediate layer comprises forming another solid-state electrolyte layer over the dielectric layer.

8. The method of claim 7 , wherein the first electrode layer and the second electrode layer each includes a conductive layer and an oxide layer suitable for ions diffusion/insertion and suitable for adsorption occurring at an interface between the oxide layer and the conductive layer.

9. The method of claim 1 , further comprising:
forming the dielectric layer over the first electrode layer; and
forming the solid-state electrolyte layer over the dielectric layer.

10. The method of claim 9 , wherein the second electrode layer includes an oxide layer suitable for ions diffusion/insertion.

11. The method of claim 10 , wherein the second electrode layer includes a conductive layer, the oxide layer suitable for adsorption occurring at an interface between the oxide layer and the conductive layer.

12. The method of claim 1 , wherein the dielectric layer has a thickness of 5 nanometers or less.

13. A capacitor, comprising:
a substrate;
a three-dimensional structure disposed over the substrate, the three-dimensional structure comprising a region having elongated pores extending towards the substrate from a top surface of the three-dimensional structure remote from the substrate or elongated columns extending away from the substrate towards the top surface of the three-dimensional structure remote from the substrate;
a first electrode layer disposed over a surface of said region of the three-dimensional structure, conformal to said surface of said region;
an intermediate layer disposed over the first electrode layer, conformal to the first electrode layer; and
a second electrode layer disposed over the intermediate layer, conformal to the intermediate layer,
wherein the intermediate layer comprises:
a solid-state electrolyte layer partially conformal to the first electrode layer; and
a dielectric layer conformal to the first electrode layer.

Assignees

• Murata Manufacturing Co
• Commissariat Energie Atomique

Inventors

• Sallaz Valentin
• Voiron Frédéric
• Oukassi Sami

Classifications

• H01G11/24 Primary

  characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor · CPC title

• H01G11/46 Primary

  Metal oxides · CPC title

• H01G11/50

  specially adapted for lithium-ion capacitors, e.g. for lithium-doping or for intercalation · CPC title

• H01G11/56

  Solid electrolytes, e.g. gels; Additives therein · CPC title

• H01G11/86

  specially adapted for electrodes (carbonisation or activation of carbon for the manufacture of electrodes H01G11/34) · CPC title