Method and apparatus to develop lithographically defined high aspect ratio interconnects

Patent metadata

Field	Value
Publication number	US-11822249-B2
Application number	US-202117541162-A
Country	US
Kind code	B2
Filing date	Dec 2, 2021
Priority date	Dec 28, 2017
Publication date	Nov 21, 2023
Grant date	Nov 21, 2023

Abstract

Disclosed is a method to develop lithographically defined high aspect ratio interconnects. Also disclosed is an apparatus comprising at least one vessel having a bottom and at least one sidewall extending from the bottom, wherein the at least one sidewall encloses an interior of the at least one vessel, a shaft having a proximal end and a distal end, wherein the distal end of the shaft extends into the interior of the at least one vessel, wherein the proximal end of the shaft is coupled to a motor, at least one support structure which extends laterally from the shaft, and a substrate attachment fixture on a distal end of the at least one support structure, wherein the at least one support structure and the substrate attachment fixture are within the interior of the at least one vessel.

First claim

What is claimed is:

1. A method, comprising:
receiving a substrate comprising a photoresist that has been exposed to a dose of light energy sufficient to define a pattern of openings to be developed into the photoresist;
attaching individual ones of a plurality of substrates to a substrate mount that is on a distal end of each of a plurality of support arms that further extend radially from a shaft at a first distance from a distal end of the shaft with the photoresist facing away from the shaft;
submerging the substrate in a liquid photoresist developer contained within an interior of a vessel having a bottom and a sidewall extending from the bottom; and
rotating the shaft with a motor coupled to the shaft while the substrate is submerged in the liquid photoresist developer.

2. The method of claim 1 , wherein the rotating is at a predetermined rate of rotation for predetermined time periods according to a predetermined rotation duty cycle.

3. The method of claim 2 , wherein a duration of the predetermined time periods and a rotational speed are variable according to a predetermined duty cycle.

4. The method of claim 3 , wherein a first predetermined time period is sufficient to allow one or more apertures in the photoresist to develop.

5. The method of claim 4 , wherein the rotational speed is to create a centrifugal force sufficient to force developer out of the apertures.

6. The method of claim 5 , wherein the rotation speed is sufficient to subject the substrate to an acceleration of at least 2000 G.

7. The method of claim 1 , wherein a set of two or more support ams are distributed angularly about the shaft at the first distance from the distal end of the shaft.

8. The method of claim 7 , wherein a second set of two or more support arms are distributed angularly about the shaft at a second distance from the distal end of the shaft.

9. A method, comprising:
forming at least one vessel having a bottom and at least one sidewall extending from the bottom, wherein the at least one sidewall encloses an interior of the at least one vessel;
extending a shaft into the interior of the at least one vessel, wherein the shaft is coupled to a motor;
extending at least one support structure laterally from the shaft; and
forming a substrate mounting fixture on a distal end of the at least one support structure;
attaching a substrate to the substrate mounting fixture, wherein the substrate has a photoresist over the substrate, and wherein the photoresist is exposed to a predetermined dose of light energy through a photomask to form a lithographically defined pattern of openings to be developed in the photoresist;
submerging the substrate in a liquid photoresist developer, wherein the liquid photoresist developer is contained within the at least one vessel; and
spinning the substrate about the shaft in the liquid photoresist developer, wherein the shaft is cyclically rotated at a predetermined rotational speed according to a predetermined duty cycle.

10. The method of claim 9 , wherein the shaft is cyclically rotated at a predetermined rotational speed according to a predetermined duty cycle until the lithographically defined pattern of openings in the photoresist are developed.

11. The method of claim 9 , wherein the photoresist has a thickness, and wherein cyclically rotating the shaft until the lithographically defined openings in the photoresist are developed comprises cyclically rotating the shaft until the lithographically defined pattern of openings extend through the thickness of the photoresist to expose the substrate.

12. The method of claims 11 , wherein cyclically rotating the shaft until the lithographically defined openings in the photoresist are developed comprises cyclically rotating the shaft until the bottoms of the lithographically defined openings are substantially planar with the substrate.

13. The method of claim 9 , wherein spinning the substrate about the shaft in the liquid photoresist developer, wherein the shaft is rotated cyclically at a predetermined rotational speed for a predetermined time, comprises cyclically rotating the shaft at a first predetermined rotational speed according to a duty cycle provided by rotating the shaft at a first predetermined time followed by stopping the rotation of the shaft for a second predetermined time.

14. The method of claim 13 , wherein the first predetermined time and the second predetermined time are progressively changed during successive duty cycles and wherein the predetermined rotational speed is progressively changed during successive duty cycles.

Assignees

• Intel Corp

Inventors

• Tadayon Pooya

Classifications

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• G03F7/2041 Primary

  in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title

• B05C3/04

  with special provision for agitating the work or the liquid or other fluent material · CPC title

• G03F7/30

  Imagewise removal using liquid means · CPC title

• G03F7/3021 Primary

  from a wafer supported on a rotating chuck · CPC title