Circuit for optoelectronic down-conversion of THz signals

Patent metadata

Field	Value
Publication number	US-11817632-B2
Application number	US-202117466908-A
Country	US
Kind code	B2
Filing date	Sep 3, 2021
Priority date	Sep 7, 2020
Publication date	Nov 14, 2023
Grant date	Nov 14, 2023

Abstract

A circuit for optoelectronic down-conversion of a terahertz, THz, signal comprises a first photodiode and a second photodiode configured to be excited by an optical beat signal. The photodiodes are coupled in series through a common antenna. The terminals of the antenna are coupled to form an output terminal and the antenna is configured to receive the terahertz, THz, signal. The photodiodes thereby, via the optical beat signal, respectively, down-convert the THz signal and generate a current comprising an intermediate frequency, IF, component and a direct current, DC, component. The respective generated currents are summed at the output terminal, thereby obtaining the IF components and cancelling the DC components.

First claim

What is claimed is:

1. A circuit for optoelectronic down-conversion of a terahertz, THz, signal, the circuit comprising:
a first photodiode and a second photodiode configured to be excited by an optical beat signal; and
a common antenna, wherein the photodiodes are coupled in series through the common antenna, wherein terminals of the antenna are configured to form an output terminal, and the antenna is configured to receive the terahertz, THz, signal,
wherein the photodiodes thereby, via the optical beat signal, respectively down-convert the THz signal and generate a current comprising an intermediate frequency, IF, component and a direct current, DC, component, wherein the respective generated currents are summed at the output terminal, thereby obtaining the IF components and cancelling the DC components.

2. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 1 , wherein the photodiodes are configured to be connected at a respective terminal to a bias circuitry, wherein the bias circuitry is configured to bias a respective photodiode such that the DC components of the respective generated currents are substantially equal.

3. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 2 , wherein the photodiodes are waveguide-coupled.

4. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 3 , wherein the terminals of the antenna are coupled to the output terminal through respective transmission lines.

5. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 4 , wherein one terminal of a respective photodiode is coupled to a respective terminal of the antenna and another terminal of the respective photodiode is coupled to a respective open transmission line.

6. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 5 , wherein the respective photodiodes are coupled to opposite terminals of the antenna via a matching network.

7. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 1 , wherein the photodiodes are waveguide-coupled.

8. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 1 , wherein the terminals of the antenna are coupled to the output terminal through respective transmission lines.

9. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 8 , wherein the transmission lines have a length of a quarter of the wavelength of the THz signal.

10. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 1 , wherein one terminal of a respective photodiode is coupled to a respective terminal of the antenna and another terminal of the respective photodiode is coupled to a respective open transmission line.

11. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 10 , wherein the transmission lines have a length of a quarter of the wavelength of the THz signal.

12. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 1 , wherein the respective photodiodes are coupled to opposite terminals of the antenna via a matching network.

13. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 1 , wherein the THz signal is a modulated THz signal.

14. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 13 , wherein the antenna is a differential antenna.

15. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 14 , wherein the antenna is a planar antenna.

16. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 1 , wherein the THz signal is an unmodulated THz signal, and wherein the IF components of the respective currents generated by the photodiodes comprise a DC component.

17. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 16 , wherein the antenna is a narrowband differential antenna such as a dipole antenna.

18. The circuit for optoelectronic down-conversion of a terahertz, THz, signal according to claim 17 , wherein the antenna is a planar antenna.

19. An integrated circuit comprising the circuit for optoelectronic down-conversion of a modulated terahertz, THz, signal according to claim 1 .

20. The integrated circuit according to claim 19 , further comprising amplifying circuitry configured to amplify the current at the output of the circuit.

Assignees

• Imec Vzw
• Stichting Imec Nederland

Inventors

• Offermans Peter
• Guermandi Davide
• Srinivasan Ashwyn

Classifications

• H01Q23/00 Primary

  Antennas with active circuits or circuit elements integrated within them or attached to them · CPC title

• H01Q9/285

  Planar dipole (H01Q9/065 takes precedence; patch antenna H01Q9/0407) · CPC title

• G01J3/42 Primary

  Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry (beam switching arrangements G01J3/08) · CPC title

• G01J2001/446

  Photodiode · CPC title