Gold sputtering target

Patent metadata

Field	Value
Publication number	US-11817299-B2
Application number	US-202218088454-A
Country	US
Kind code	B2
Filing date	Dec 23, 2022
Priority date	Jun 2, 2016
Publication date	Nov 14, 2023
Grant date	Nov 14, 2023

Abstract

A gold sputtering target is made of gold and inevitable impurities, and has a surface to be sputtered. In the gold sputtering target, an average value of Vickers hardness is 40 or more and 60 or less, and an average crystal grain size is 15 μm or more and 200 μm or less. A {110} plane of gold is preferentially oriented at the surface to be sputtered.

First claim

What is claimed is:

1. A manufacturing method of a gold sputtering target, comprising:
a step of preparing a gold ingot,
a first processing step of processing the gold ingot into a gold billet,
a step of manufacturing the gold sputtering target from the gold billet, in which the gold sputtering target is made of gold and inevitable impurities, and of which an average value of Vickers hardness is 40 or more and 60 or less, an average crystal grain size is 15 μm or more and 200 μm or less, and a {110} plane of gold is preferentially oriented at a surface to be sputtered, and wherein the surface to be sputtered is subjected to X-ray diffraction, and an orientation index N of each crystal plane is found from the following expression (1) by using a diffraction intensity ratio of each crystal plane of gold, the orientation index N of a {110} plane of gold is larger than 1, and the largest among the orientation indexes N of all crystal planes,

N
=

(

I
/

I

(
hkl
)

∑

(

I
/

I

(
hkl
)

)

JCPDS
·

I
/

I

(
hkl
)

∑

(

JCPDS
·

I
/

I

(
hkl
)

)

)

(
1
)

wherein I/I (hkl) is the diffraction intensity ratio of an (hkl) plane in the X-ray diffraction, JCPDS·I/I (hkl) is the diffraction intensity ratio of the (hkl) plane at a JCPDS card for gold, Σ(I/I (hkl) ) is a sum of the diffraction intensity ratios of all crystal planes in the X-ray diffraction, and Σ(JCPDS·I/I (hkl) is a sum of the diffraction intensity ratios of all crystal planes at the JCPDS card for gold.

2. The manufacturing method according to claim 1 , wherein
the Vickers hardness of the gold sputtering target as a whole falls within ±20%.

3. The manufacturing method according to claim 1 , wherein
the average crystal grain size of the gold sputtering target as a whole falls within ±20%.

4. The manufacturing method according to claim 1 , wherein
a gold purity of the gold sputtering target is 99.99% or more.

5. The manufacturing method according to claim 1 , comprising:
wherein the step of preparing the gold ingot includes the gold ingot having gold purity of 99.99% or more;
wherein the first processing step of processing the gold ingot into a gold billet comprises processing the gold ingot into a plate-shaped gold billet;
a second processing step of obtaining a plate-shaped target material by subjecting the plate-shaped gold billet to hot-forging or hot-rolling at a temperature of 200° C. or more and 800° C. or less with a reduction ratio of 50% or more and 90% or less; and
a heat treatment step of subjecting the plate-shaped target material to the heat treatment by retaining at a temperature of 200° C. or more and 500° C. or less in a range of 10 minutes or more and 120 minutes or less.

6. The manufacturing method according to claim 1 , comprising:
wherein the step of preparing the gold ingot includes the gold ingot having a gold purity of 99.99% or more;
wherein the first processing step of processing the gold ingot into a gold billet comprises processing the gold ingot into a cylindrical gold billet;
a second processing step of obtaining a cylindrical target material by subjecting the cylindrical gold billet to an extrusion process in a cold with an extrusion ratio of 1.5 or more and 3.0 or less, a drawing process in a cold with a reduction ratio of 2% or more and 5% or less per one time, or a hot-forging process at a temperature of 200° C. or more and 800° C. or less with a reduction ratio of 30% or more and 80% or less; and
a heat treatment step of subjecting the cylindrical target material to the heat treatment by retaining at a temperature of 200° C. or more and 500° C. or less in a range of 10 minutes or more and 120 minutes or less.

Assignees

• Tanaka Precious Metal Ind

Inventors

• Kato Tetsuya
• Mizuno Yohei
• Ishikura Chiharu

Classifications

• H01J37/3426 Primary

  Material · CPC title

• C23C14/14

  Metallic material, boron or silicon · CPC title

• C23C14/34

  Sputtering · CPC title

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• C22F1/00

  Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working (apparatus for mechanical working of metal B21, B23, B24) · CPC title