Stabilized metal monolayer structure

Patent metadata

Field	Value
Publication number	US-11814723-B2
Application number	US-201816166500-A
Country	US
Kind code	B2
Filing date	Oct 22, 2018
Priority date	Apr 21, 2016
Publication date	Nov 14, 2023
Grant date	Nov 14, 2023

Abstract

A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.

First claim

What is claimed is:

1. A two-dimensional elementary metal structure comprising:
an elementary metal layer formed using ALD (Atomic Layer Deposition) having 3 to 15 atomic layers and having a two-dimensional structure, wherein the elementary metal layer is formed of a metal selected from Group 4 metals, Group 5 metals, and Group 6 metals; and
organic molecular layers provided on a top surface and a bottom surface of the elementary metal layer,
wherein each of the organic molecular layers include a bifunctional group or trifunctional group including a chalcogen element and are formed using MLD (Molecular Layer Deposition),
wherein the elementary metal layer is chemically bonded to the chalcogen element of the organic molecular layers,
wherein the elementary metal layer has a metallic property according to X-ray photoelectron spectroscopy (XPS) analysis even though the elementary metal layer is chemically bonded to the chalcogen element of the organic molecular layers, and
wherein the elementary metal layer has semiconductor properties.

2. The two-dimensional elementary metal structure of claim 1 , wherein a carrier concentration in the elementary metal layer does not decrease as temperature rises.

3. The two-dimensional elementary metal structure of claim 1 , wherein the elementary metal layer has a band gap.

4. The two-dimensional elementary metal structure of claim 1 , wherein the elementary metal layer is formed of a metal selected from W and Mo.

5. A two-dimensional elementary metal structure comprising:
an elementary metal layer formed using ALD (Atomic Layer Deposition) having 3 to 15 atomic layers and having a two-dimensional structure, wherein the elementary metal layer is formed of a metal selected from Group 4 metals, Group 5 metals, and Group 6 metals; and
organic molecular layers provided on a top surface and a bottom surface of the elementary metal layer,
wherein each of the organic molecular layers includes a bifunctional group or trifunctional group including a chalcogen element and formed using MLD (Molecular Layer Deposition),
wherein the elementary metal layer is chemically bonded to the chalcogen element of the organic molecular layers,
wherein the elementary metal layer has a metallic property according to X-ray photoelectron spectroscopy (XPS) analysis even though the elementary metal layer is chemically bonded to the chalcogen element of the organic molecular layer, and
wherein the elementary metal layer provides a band gap.

6. The two-dimensional elementary metal structure of claim 5 , wherein the elementary metal layer has semiconductor properties, unlike a bulk metal formed of a metal of the elementary metal layer.

7. The two-dimensional elementary metal structure of claim 5 , wherein the elementary metal layer is formed of a metal selected from W and Mo.

8. The two-dimensional elementary metal structure comprising:
an elementary metal layer formed using ALD (Atomic Layer Deposition) having 3 to 15 atomic layers and having a two-dimensional structure, wherein the elementary metal layer is formed of a metal selected from Group 4 metals, Group 5 metals and Group 6 metals; and
adjacent layers having organic molecular layers provided on a top surface and a bottom surface of the elementary metal layer using MLD (Molecular Layer Deposition),
wherein each of the organic molecular layers includes a bifunctional group or trifunctional group including chalcogen element,
wherein each of the adjacent layers further comprises a seed layer formed at an interface of each of the organic molecular layers and the elementary metal layer, the seed layer is formed of a material including a chalcogen element using ALD, and the chalcogen element of the seed layer is chemically bonded to the elementary metal layer,
wherein the elementary metal layer has a metallic property according to X-ray photoelectron spectroscopy (XPS) analysis even though the elementary metal layer is chemically bonded to the chalcogen element of the seed layer, and
wherein the elementary metal layer has semiconductor properties.

9. The two-dimensional elementary metal structure of claim 8 , wherein the seed layer is Al 2 O 3 or TiO 2 .

10. The two-dimensional elementary metal structure of claim 8 , wherein the elementary metal layer is formed of a metal selected from W and Mo.

Assignees

• Iucf Hyu

Inventors

• Sung Myung Mo
• Kim Hong Bum
• Jung Jin Won
• Han Kyu Seok

Classifications

• C23C16/0272 Primary

  Deposition of sub-layers, e.g. to promote the adhesion of the main coating · CPC title

• B05D1/60

  Deposition of organic layers from vapour phase (vapour phase deposition in general C23C14/00, C23C16/00) · CPC title

• B05D7/52

  Two layers · CPC title

• B32B7/02

  Physical, chemical or physicochemical properties · CPC title

• B32B7/025

  Electric or magnetic properties · CPC title