Methods of forming cutting elements and supporting substrates for cutting elements

Patent metadata

Field	Value
Publication number	US-11807920-B2
Application number	US-202217662807-A
Country	US
Kind code	B2
Filing date	May 10, 2022
Priority date	May 12, 2017
Publication date	Nov 7, 2023
Grant date	Nov 7, 2023

Abstract

A method of forming a supporting substrate for a cutting element comprises forming a precursor composition comprising discrete WC particles, a binding agent, and discrete particles comprising Co, one or more of Al, Be, Ga, Ge, Si, and Sn, and one or more of C and W. The precursor composition is subjected to a consolidation process to form a consolidated structure including WC particles dispersed in a homogenized binder comprising Co, W, C, and one or more of Al, Be, Ga, Ge, Si, and Sn. A method of forming a cutting element, a cutting element, a related structure, and an earth-boring tool are also described.

First claim

What is claimed is:

1. A method of forming a supporting substrate for a cutting element, comprising:
forming a precursor composition comprising discrete WC particles, a binding agent, and discrete particles comprising Co, one or more of Be, Ga, Ge, and Sn, and one or more of C and W; and
subjecting the precursor composition to a consolidation process to form a consolidated structure including WC particles dispersed in a homogenized binder comprising Co, W, C, and one or more of Be, Ga, Ge, and Sn.

2. The method of claim 1 , wherein forming the precursor composition comprises selecting the discrete particles to comprise Co, two or more of Be, Ga, Ge, and Sn, and one or more of C and W.

3. The method of claim 1 , wherein forming a precursor composition comprises forming the precursor composition to comprise the discrete WC particles, the binding agent, and discrete alloy particles individually comprising Co, one or more of Be, Ga, Ge, and Sn, and one or more of C and W.

4. The method of claim 3 , further comprising selecting the discrete alloy particles to individually comprise Co, two or more of Be, Ga, Ge, and Sn, and one or more of C and W.

5. The method of claim 1 , wherein forming the precursor composition comprises forming the precursor composition to comprise from about 5 wt % to about 15 wt % of the discrete particles, and from about 85 wt % to about 95 wt % of the discrete WC particles.

6. The method of claim 1 , wherein forming a precursor composition comprises forming the precursor composition to comprise the discrete WC particles, the binding agent, discrete elemental Co particles, one or more of discrete elemental Be particles, discrete elemental Ga particles, discrete elemental Ge particles, and discrete elemental Sn particles, and one or more of discrete C particles and discrete elemental W particles.

7. The method of claim 6 , wherein forming the precursor composition comprises forming the precursor composition to comprise the discrete WC particles, the binding agent, the one or more of the discrete C particles and the discrete elemental W particles, and two or more of the discrete elemental Be particles, the discrete elemental Ga particles, the discrete elemental Ge particles, and the discrete elemental Sn particles.

8. The method of claim 1 , wherein subjecting the precursor composition to a consolidation process comprises:
forming the precursor composition into a green structure through at least one shaping and pressing process;
removing the binding agent from and partially sintering the green structure to form a brown structure; and
subjecting the brown structure to a densification process to form the consolidated structure.

9. The method of claim 8 , wherein subjecting the brown structure to a densification process comprises subjecting the brown structure to one or more of a sintering process, a HIP process, a sintered-HIP process, and a hot pressing process.

10. The method of claim 8 , further comprising subjecting the consolidated structure to at least one supplemental homogenization process to substantially completely homogenize the homogenized binder thereof.

11. A method of forming a cutting element, comprising:
providing a precursor substrate comprising WC particles dispersed within a homogenized binder comprising Co, W, C, and one or more of Al, Be, Ga, Ge, Si, and Sn;
depositing a powder comprising diamond particles directly on the supporting precursor substrate;
subjecting the precursor substrate and the powder to elevated temperatures and elevated pressures to diffuse a portion of the homogenized binder of the precursor substrate into the powder and inter-bond the diamond particles and form a supporting substrate; and
converting portions of the homogenized binder within interstitial spaces between the inter-bonded diamond particles into a thermally stable material comprising κ-carbide precipitates, the thermally stable material substantially free of a catalyst material without leaching.

12. The method of claim 11 , wherein providing a precursor substrate comprises selecting the precursor substrate to comprise the WC particles dispersed within a homogenized binder comprising Co, W, C, and two or more of Al, Be, Ga, Ge, Si, and Sn.

13. The method of claim 11 , wherein converting portions of the homogenized binder within interstitial spaces between the inter-bonded diamond particles into a thermally stable material comprises forming the κ-carbide precipitates of the thermally stable material to individually comprise Co, C, and two or more of Al, Be, Ga, Ge, Si, and Sn.

14. The method of claim 11 , wherein converting portions of the homogenized binder within interstitial spaces between the inter-bonded diamond particles into a thermally stable material comprises forming the thermally stable material to comprise one or more of Co 3 AlC 1-x precipitates, Co 3 (Al,Ga)C 1-x precipitates, Co 3 (Al,Sn)C 1-x precipitates, Co 3 (Al,Be)C 1-x precipitates, Co 3 (Al,Ge)C 1-x precipitates, Co 3 (Al,Si)C 1-x precipitates, Co 3 GaC 1-x precipitates, Co 3 (Ga,Sn)C 1-x precipitates, Co 3 (Ga,Be)C 1-x precipitates, Co 3 (Ga,Ge)C 1-x precipitates, Co 3 (Ga,Si)C 1-x precipitates, Co 3 SnC 1-x precipitates, Co 3 (Sn,Be)C 1-x precipitates, Co 3 (Sn,Ge)C 1-x precipitates, Co 3 SnSiC 1-x precipitates, Co 3 BeC 1-x precipitates, Co 3 (Be,Ge)C 1-x precipitates, Co 3 (Be,Si)C 1-x precipitates, Co 3 GeC 1-x precipitates, Co 3 (Ge,Si)C 1-x precipitates, and Co 3 SiC 1-x precipitates, wherein 0≤x≤0.5.

15. The method of claim 11 , wherein converting portions of the homogenized binder within interstitial spaces between the inter-bonded diamond particles into a thermally stable material comprises forming the thermally stable material to further comprise one or more of FCC L1 2 phase precipitates, FCC DO 22 phase precipitates, D8 5 phase precipitates, DO 19 phase precipitates, β phase precipitates, FCC L1 0 phase precipitates, WC precipitates, and M x C precipitates, where x>2 and M=Co,W.

16. The method of claim 11 , further comprising solution treating the thermally stable material to decompose the κ-carbide precipitates thereof into FCC L1 2 phase precipitates.

17. A method of forming a cutting element, comprising:
forming a precursor composition comprising discrete WC particles, a binding agent, and discrete particles comprising Co, one or more of Al, Be, Ga, Ge, Si, and Sn, and one or more of C and W;
subjecting the precursor composition to a consolidation process to form a consolidated structure including WC particles dispersed in a homogenized binder comprising Co, W, C, and one or more of Al, Be, Ga, Ge, Sn, and Si;
providing a powder comprising diamond particles directly on the consolidated structure;
heating, under pressure, the consolidated structure and the powder to at least one temperature greater than the solidus temperature of the homogenized binder to transport a portion of the homogenized binder of the consolidated structure into the powder and inter-bond the diamond particles;
converting portions of the homogenized binder within interstitial spaces between the inter-bonded diamond particles into a thermally stable material comprising κ-carbide precipitates; and
converting substantially all catalytic Co within the portion of the homogenized binder transported into the powder into the thermally stable material without leaching.

18. The method of claim 17 , wherein forming the precursor composition comprises selecting the discrete particles to comprise Co, two or more of Al, Be, Ga, Ge, Si, and Sn, and one or more of C

Assignees

• Baker Hughes Holdings Llc

Inventors

• Cao Wanjun
• Bird Marc W

Classifications

• C22C29/08 Primary

  based on tungsten carbide · CPC title

• B22F3/15

  Hot isostatic pressing · CPC title

• B22F7/06

  of composite workpieces or articles from parts, e.g. to form tipped tools {(B22F7/002 takes precedence)} · CPC title

• B24D18/0009

  using moulds or presses · CPC title

• C22C29/005

  comprising a particular metallic binder · CPC title