Method of manufacturing composite substrate

Patent metadata

Field	Value
Publication number	US-11804818-B2
Application number	US-201716475528-A
Country	US
Kind code	B2
Filing date	Dec 6, 2017
Priority date	Jan 18, 2017
Publication date	Oct 31, 2023
Grant date	Oct 31, 2023

Abstract

A method of manufacturing a composite substrate that includes bonding a silicon (Si) wafer having an interstitial oxygen concentration of 2 to 10 ppma to a piezoelectric material substrate as a support substrate, and thinning the piezoelectric material substrate after the bonding. The piezoelectric material substrate is particularly preferably a lithium tantalate wafer (LT) substrate or a lithium niobate (LN) substrate.

First claim

The invention claimed is:

1. A method of manufacturing a composite substrate comprising:
preparing a piezoelectric material substrate;
preparing a silicon (Si) wafer having an interstitial oxygen concentration of 2 to 10 parts per million atomic (ppma) as a support substrate;
bonding the piezoelectric material substrate and the silicon wafer; and
thinning the piezoelectric material substrate after the bonding,
wherein the method further comprises providing an intervening layer on either or both surfaces of the piezoelectric material substrate and the silicon wafer prior to the bonding.

2. The method of manufacturing the composite substrate according to claim 1 , wherein the piezoelectric material substrate is a lithium tantalate wafer (LT) substrate or a lithium niobate (LN) substrate.

3. The method of manufacturing the composite substrate according to claim 1 , further comprising cutting out the silicon wafer from a crystal manufactured by a Floating Zone (FZ) method, a Magnetic field applied Czochralski (MCZ) method, a Czochralski (CZ) method.

4. The method of manufacturing the composite substrate according to claim 1 , wherein the intervening layer comprises any of silicon oxide, silicon nitride, silicon oxynitride (SiON), and amorphous silicon.

5. The method of manufacturing the composite substrate according to claim 1 , wherein the providing the intervening layer further includes thermally oxidizing the silicon wafer.

6. The method of manufacturing the composite substrate according to claim 1 , wherein the providing the intervening layer further includes forming the intervening layer by chemical vapor deposition (CVD) or physical vapor deposition (PVD).

7. The method of manufacturing the composite substrate according to claim 1 , wherein the providing the intervening layer further includes forming the intervening layer by applying a silicone-based oil.

8. The method of manufacturing the composite substrate according to claim 7 , wherein the silicone-based oil contains perhydropolysilazane or methyltrimethoxysilane.

9. The method of manufacturing the composite substrate according to claim 1 , wherein at least one surface of the either or both surfaces of the piezoelectric material substrate and the silicon wafer upon which the intervening layer is to be provided is non-mirror finished, and the intervening layer is provided in advance on the non-mirror finished surface before bonding.

10. The method of manufacturing the composite substrate according to claim 1 , further comprising applying a surface activation treatment to one or both of the piezoelectric material substrate and the silicon wafer before the bonding.

11. The method for manufacturing the composite substrate according to claim 10 , wherein the applying the surface activation treatment comprises using a vacuum ion beam or a plasma activation method.

Assignees

• Shinetsu Chemical Co

Inventors

• Akiyama Shoji
• Shirai Shozo
• Tanno Masayuki

Classifications

• H10N30/706 Primary

  characterised by the underlying bases, e.g. substrates · CPC title

• H10P10/12

  Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates (preparing SOI wafers using bonding H10P90/1914) · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/6328

  Deposition from the gas or vapour phase · CPC title

• H03H9/02574 Primary

  of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate · CPC title